SI7115DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

3.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Transistor Element Material :

SILICON

Threshold Voltage :

-2V

Number of Pins :

8

Power Dissipation-Max :

3.7W Ta 52W Tc

Height :

1.04mm

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

52 ns

Mount :

Surface Mount

Terminal Position :

Dual

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

35 ns

Continuous Drain Current (ID) :

2.3A

Series :

TrenchFET®

Nominal Vgs :

-2 V

Power Dissipation :

3.7W

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 50V

JESD-30 Code :

S-XDSO-C5

Case Connection :

DRAIN

Pin Count :

8

Rds On (Max) @ Id, Vgs :

295m Ω @ 4A, 10V

Drain to Source Voltage (Vdss) :

150V

Package / Case :

PowerPAK® 1212-8

Rise Time :

28ns

Number of Terminations :

5

Drain to Source Breakdown Voltage :

-150V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Turn On Delay Time :

11 ns

ECCN Code :

EAR99

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

JESD-609 Code :

e3

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

8.9A Tc

Radiation Hardening :

No

Terminal Form :

C BEND

Number of Elements :

1

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mounting Type :

Surface Mount

Published :

2013

Operating Temperature :

-50°C~150°C TJ

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Width :

3.05mm

Peak Reflow Temperature (Cel) :

260

Resistance :

295mOhm

Factory Lead Time :

14 Weeks

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V