SI7115DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-150V

Turn On Delay Time :

11 ns

Case Connection :

DRAIN

Width :

3.05mm

FET Type :

P-Channel

Package / Case :

PowerPAK® 1212-8

Mount :

Surface Mount

Number of Elements :

1

Length :

3.05mm

Number of Pins :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Pin Count :

8

Drain to Source Voltage (Vdss) :

150V

Lead Free :

Lead Free

ECCN Code :

EAR99

Turn-Off Delay Time :

52 ns

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

28ns

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Position :

Dual

Height :

1.04mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

JESD-30 Code :

S-XDSO-C5

Series :

TrenchFET®

Power Dissipation-Max :

52W Tc

Power Dissipation :

3.7W

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

5

Operating Temperature :

-50°C~150°C TJ

Fall Time (Typ) :

35 ns

Terminal Form :

C BEND

Published :

2016

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.295Ohm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

295m Ω @ 4A, 10V

Current - Continuous Drain (Id) @ 25°C :

8.9A Tc

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

2.3A

Element Configuration :

Single

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 50V

Mounting Type :

Surface Mount

Number of Channels :

1

Packaging :

Tape and Reel (TR)