SI7114DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.5W Ta

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 18.3A, 10V

Number of Terminations :

5

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Height :

1.04mm

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

S-XDSO-C5

Turn-Off Delay Time :

45 ns

Rise Time :

10ns

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0075Ohm

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Element Configuration :

Single

Number of Pins :

8

DS Breakdown Voltage-Min :

1V

Vgs(th) (Max) @ Id :

3V @ 250µA

Width :

3.05mm

Terminal Form :

C BEND

Series :

TrenchFET®

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

11.7A Ta

Avalanche Energy Rating (Eas) :

42 mJ

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Pin Count :

8

Published :

2013

Continuous Drain Current (ID) :

18.3A

Mount :

Surface Mount

Length :

3.05mm

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Package / Case :

PowerPAK® 1212-8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

60A

Case Connection :

DRAIN

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

Fall Time (Typ) :

10 ns

Terminal Position :

Dual