SI7114DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation-Max :

1.5W Ta

Nominal Vgs :

1 V

Number of Channels :

1

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

11.7A Ta

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

Avalanche Energy Rating (Eas) :

42 mJ

DS Breakdown Voltage-Min :

1V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 18.3A, 10V

Package / Case :

PowerPAK® 1212-8

Pin Count :

8

Turn-Off Delay Time :

45 ns

Pbfree Code :

yes

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

S-XDSO-C5

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

5

REACH SVHC :

Unknown

Length :

3.05mm

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

C BEND

Fall Time (Typ) :

10 ns

Height :

1.04mm

Mount :

Surface Mount

Series :

TrenchFET®

Threshold Voltage :

1V

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

FET Type :

N-Channel

Vgs (Max) :

±20V

Power Dissipation :

1.5W

Drain to Source Voltage (Vdss) :

30V

Rise Time :

10ns

Lead Free :

Lead Free

Resistance :

7.5mOhm

Continuous Drain Current (ID) :

18.3A

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Published :

2016

Width :

3.05mm

Number of Elements :

1