SI7114ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3.7W

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.05mm

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Height :

1.04mm

Power Dissipation-Max :

3.7W Ta 39W Tc

ECCN Code :

EAR99

JESD-30 Code :

S-XDSO-C5

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Pbfree Code :

yes

FET Type :

N-Channel

Turn On Delay Time :

20 ns

Case Connection :

DRAIN

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

35A

Avalanche Energy Rating (Eas) :

45 mJ

REACH SVHC :

Unknown

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

Number of Elements :

1

Number of Channels :

1

Rise Time :

14ns

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 18A, 10V

Factory Lead Time :

14 Weeks

Terminal Form :

C BEND

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Number of Pins :

8

Width :

3.05mm

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

PowerPAK® 1212-8

Continuous Drain Current (ID) :

18.3A

Turn-Off Delay Time :

20 ns

Threshold Voltage :

3V

Pulsed Drain Current-Max (IDM) :

60A

Series :

TrenchFET®

Pin Count :

8

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0075Ohm