SI7113DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

110ns

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Length :

3.3mm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Number of Channels :

1

Threshold Voltage :

-1V

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Continuous Drain Current (ID) :

3.5A

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

134m Ω @ 4A, 10V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation :

3.7W

Package / Case :

PowerPAK® 1212-8

REACH SVHC :

Unknown

Pulsed Drain Current-Max (IDM) :

20A

Published :

2013

Width :

3.3mm

Radiation Hardening :

No

Turn On Delay Time :

30 ns

Terminal Position :

Dual

Number of Terminations :

5

JESD-30 Code :

S-PDSO-F5

Power Dissipation-Max :

3.7W Ta 52W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1480pF @ 50V

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Flat

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-100V

Vgs (Max) :

±20V

Series :

TrenchFET®

Number of Pins :

8

Pbfree Code :

yes

Height :

1.04mm

Turn-Off Delay Time :

51 ns

Operating Temperature :

-50°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

13.2A Tc

FET Type :

P-Channel

Mount :

Surface Mount

Resistance :

134mOhm

Fall Time (Typ) :

40 ns