SI7113DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

20A

Drain to Source Breakdown Voltage :

-100V

Number of Channels :

1

Pbfree Code :

yes

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Length :

3.05mm

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Number of Terminations :

5

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

100V

Package / Case :

PowerPAK® 1212-8

Element Configuration :

Single

Height :

1.04mm

Current - Continuous Drain (Id) @ 25°C :

13.2A Tc

FET Type :

P-Channel

Power Dissipation :

3.7W

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Published :

2015

Fall Time (Typ) :

40 ns

Mount :

Surface Mount

JESD-30 Code :

S-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

1480pF @ 50V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

134m Ω @ 4A, 10V

Terminal Position :

Dual

ECCN Code :

EAR99

Rise Time :

110ns

Continuous Drain Current (ID) :

-13.2A

Pin Count :

8

JESD-609 Code :

e3

Resistance :

134mOhm

Width :

3.05mm

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

51 ns

Turn On Delay Time :

30 ns

Operating Temperature :

-50°C~150°C TJ

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.7W Ta 52W Tc