SI7112DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Continuous Drain Current (ID) :

11.3A

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Terminal Form :

C BEND

Number of Channels :

1

Published :

2012

Mounting Type :

Surface Mount

Width :

3.05mm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

REACH SVHC :

Unknown

Threshold Voltage :

600mV

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 17.8A, 10V

Vgs (Max) :

±12V

Operating Temperature :

-50°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

20 mJ

Pulsed Drain Current-Max (IDM) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2610pF @ 15V

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0075Ohm

Turn On Delay Time :

10 ns

Number of Terminations :

5

Mount :

Surface Mount

DS Breakdown Voltage-Min :

30V

Rise Time :

10ns

Factory Lead Time :

14 Weeks

Height :

1.04mm

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchFET®

FET Type :

N-Channel

Length :

3.05mm

Turn-Off Delay Time :

65 ns

Power Dissipation-Max :

1.5W Ta

Package / Case :

PowerPAK® 1212-8

JESD-609 Code :

e3

Power Dissipation :

1.5W

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

S-XDSO-C5

ECCN Code :

EAR99

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

11.3A Tc

Fall Time (Typ) :

10 ns

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Pin Count :

8