SI7112DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

S-XDSO-C5

Rise Time :

10ns

Pbfree Code :

yes

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 17.8A, 10V

Width :

3.05mm

Current - Continuous Drain (Id) @ 25°C :

11.3A Tc

Length :

3.05mm

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Resistance :

7.5mOhm

Number of Terminations :

5

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

10 ns

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

60A

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Operating Temperature :

-50°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.5W

Number of Elements :

1

Turn-Off Delay Time :

65 ns

Power Dissipation-Max :

1.5W Ta

Terminal Position :

Dual

Continuous Drain Current (ID) :

17.8A

Vgs (Max) :

±12V

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

20 mJ

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® 1212-8

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

2610pF @ 15V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Published :

2011

Number of Pins :

8

FET Type :

N-Channel

Additional Feature :

FAST SWITCHING

Series :

TrenchFET®

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Case Connection :

DRAIN

Height :

1.04mm

Lead Free :

Lead Free

Terminal Form :

C BEND

Pin Count :

8