SI5517DU-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

40 ns

Mounting Type :

Surface Mount

Power - Max :

8.3W

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Input Capacitance :

520pF

Published :

2016

Length :

3mm

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 250μA

Supplier Device Package :

PowerPAK® ChipFet Dual

FET Type :

N and P-Channel

Continuous Drain Current (ID) :

4.6A

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 8V

Drain to Source Breakdown Voltage :

20V

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

8V

Width :

1.9mm

Current - Continuous Drain (Id) @ 25°C :

6A

Fall Time (Typ) :

55 ns

FET Feature :

Logic Level Gate

Drain to Source Resistance :

72mOhm

Rds On Max :

39 mΩ

Package / Case :

PowerPAK® ChipFET™ Dual

Turn On Delay Time :

8 ns

Height :

750μm

Max Power Dissipation :

2.3W

Number of Channels :

2

Base Part Number :

SI5517

Rise Time :

35ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

39mOhm @ 4.4A, 4.5V

Series :

TrenchFET®