SI5504BDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

3.12W 3.1W

Pbfree Code :

yes

Nominal Vgs :

1.5 V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

4A

Time@Peak Reflow Temperature-Max (s) :

30

Resistance :

140mOhm

Package / Case :

8-SMD, Flat Lead

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.1A, 10V

Power Dissipation :

1.5W

Vgs(th) (Max) @ Id :

3V @ 250µA

Weight :

84.99187mg

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Continuous Drain Current (ID) :

3.7A

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Max Power Dissipation :

3.1W

Pulsed Drain Current-Max (IDM) :

10A

Pin Count :

8

Number of Channels :

2

REACH SVHC :

Unknown

Radiation Hardening :

No

Terminal Position :

Dual

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

8

Transistor Element Material :

SILICON

Number of Pins :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

FET Type :

N and P-Channel

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4A 3.7A

Mount :

Surface Mount

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Base Part Number :

SI5504

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Terminal Form :

C BEND

Series :

TrenchFET®

Published :

2015