SI5509DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 10V

Transistor Element Material :

SILICON

Max Power Dissipation :

4.5W

Published :

2013

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

5A

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

52m Ω @ 5A, 4.5V

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

6.1A 4.8A

Vgs(th) (Max) @ Id :

2V @ 250μA

Base Part Number :

SI5509

Number of Pins :

8

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Terminal Finish :

Pure Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 5V

Number of Terminations :

8

Terminal Position :

Dual

Series :

TrenchFET®

Drain-source On Resistance-Max :

0.052Ohm

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

FET Type :

N and P-Channel

Pulsed Drain Current-Max (IDM) :

10A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Package / Case :

8-SMD, Flat Lead

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

4.8A