SI5515CDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2015

Number of Channels :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rise Time :

32ns

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Pin Count :

8

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 5V

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

800mV @ 250μA

Operating Temperature :

-55°C~150°C TJ

Width :

1.65mm

ECCN Code :

EAR99

Nominal Vgs :

800 mV

Length :

3.05mm

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Input Capacitance (Ciss) (Max) @ Vds :

632pF @ 10V

Number of Pins :

8

Package / Case :

8-SMD, Flat Lead

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

4A

Rds On (Max) @ Id, Vgs :

36m Ω @ 6A, 4.5V

Number of Elements :

2

Mount :

Surface Mount

Fall Time (Typ) :

6 ns

Threshold Voltage :

800mV

Continuous Drain Current (ID) :

4A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Power Dissipation :

1.3W

Drain-source On Resistance-Max :

0.036Ohm

Height :

1.1mm

Gate to Source Voltage (Vgs) :

8V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Terminal Form :

C BEND

Weight :

84.99187mg

Contact Plating :

Tin

Max Power Dissipation :

3.1W

Turn-Off Delay Time :

25 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

FET Type :

N and P-Channel

Mounting Type :

Surface Mount

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Base Part Number :

SI5515