SI5504BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

3.12W 3.1W

Continuous Drain Current (ID) :

4A

FET Type :

N and P-Channel

Transistor Application :

SWITCHING

Rise Time :

10ns

Width :

1.65mm

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Pin Count :

8

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Pulsed Drain Current-Max (IDM) :

10A

Time@Peak Reflow Temperature-Max (s) :

40

Resistance :

140mOhm

Base Part Number :

SI5504

Number of Elements :

2

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Max Power Dissipation :

3.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

1.5W

Turn On Delay Time :

4 ns

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

4A

Mount :

Surface Mount

Series :

TrenchFET®

Number of Terminations :

8

Transistor Element Material :

SILICON

Length :

3.05mm

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Factory Lead Time :

14 Weeks

Published :

2003

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

5 ns

Number of Channels :

2

Current - Continuous Drain (Id) @ 25°C :

4A 3.7A

JESD-609 Code :

e3

Package / Case :

8-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.1A, 10V

Turn-Off Delay Time :

10 ns

Weight :

84.99187mg

Pbfree Code :

yes

Terminal Form :

C BEND

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.1mm

Operating Temperature :

-55°C~150°C TJ