SI5504DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

C BEND

Drain Current-Max (Abs) (ID) :

2.9A

Base Part Number :

SI5504

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

2.9A 2.1A

Number of Terminations :

8

Pbfree Code :

yes

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V

Max Power Dissipation :

1.1W

Series :

TrenchFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N and P-Channel

Number of Elements :

2

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Package / Case :

8-SMD, Flat Lead

Terminal Finish :

PURE MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

30

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Radiation Hardening :

No

DS Breakdown Voltage-Min :

30V

Published :

2010

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

2.1A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)