SI5513DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

75mOhm @ 3.1A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.5V

Number of Elements :

2

Drain to Source Resistance :

130mOhm

Nominal Vgs :

1.5 V

Rise Time :

35ns

Max Power Dissipation :

1.1W

FET Feature :

Logic Level Gate

Dual Supply Voltage :

20V

Published :

2009

Resistance :

155mOhm

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

3.1A 2.1A

Package / Case :

8-SMD, Flat Lead

Rds On Max :

75 mΩ

RoHS Status :

ROHS3 Compliant

Length :

3.0988mm

Packaging :

Tape and Reel (TR)

Height :

1.0922mm

Continuous Drain Current (ID) :

4.2A

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

8

Drain to Source Voltage (Vdss) :

20V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

REACH SVHC :

No SVHC

Width :

1.7018mm

Element Configuration :

Dual

Supplier Device Package :

1206-8 ChipFET™

Series :

TrenchFET®

Power Dissipation :

1.1W

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

25 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Termination :

SMD/SMT

Turn On Delay Time :

13 ns

Fall Time (Typ) :

35 ns

Base Part Number :

SI5513

Drain to Source Breakdown Voltage :

20V

Power - Max :

1.1W

FET Type :

N and P-Channel

Lead Free :

Lead Free