SI5515CDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

Dual

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Continuous Drain Current (ID) :

4A

Vgs(th) (Max) @ Id :

800mV @ 250μA

Pin Count :

8

Base Part Number :

SI5515

Package / Case :

8-SMD, Flat Lead

Drain Current-Max (Abs) (ID) :

4A

Number of Pins :

8

Transistor Element Material :

SILICON

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.036Ohm

Rds On (Max) @ Id, Vgs :

36m Ω @ 6A, 4.5V

Threshold Voltage :

400mV

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Published :

2009

Terminal Form :

C BEND

Terminal Finish :

PURE MATTE TIN

Gate to Source Voltage (Vgs) :

8V

Series :

TrenchFET®

Lead Free :

Lead Free

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

ECCN Code :

EAR99

Weight :

84.99187mg

Max Power Dissipation :

3.1W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Power Dissipation :

1.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

632pF @ 10V

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 5V

Operating Temperature :

-55°C~150°C TJ