SI5511DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

15 ns

Max Power Dissipation :

1.3W

Gate Charge (Qg) (Max) @ Vgs :

7.1nC @ 5V

Rds On Max :

55 mΩ

Published :

2010

Input Capacitance :

435pF

Number of Pins :

8

Max Operating Temperature :

150°C

Package / Case :

8-SMD, Flat Lead

Current - Continuous Drain (Id) @ 25°C :

4A 3.6A

Drain to Source Breakdown Voltage :

30V

Number of Elements :

2

Rise Time :

78ns

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

4A

Operating Temperature :

-55°C~150°C TJ

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Power - Max :

3.1W 2.6W

Base Part Number :

SI5511

Fall Time (Typ) :

65 ns

Turn-Off Delay Time :

33 ns

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 15V

Number of Channels :

2

Supplier Device Package :

1206-8 ChipFET™

Mount :

Surface Mount

Weight :

84.99187mg

Series :

TrenchFET®

Drain to Source Resistance :

150mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

55mOhm @ 4.8A, 4.5V

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)