SI5513CDC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

4.2nC @ 5V

FET Feature :

Logic Level Gate

Weight :

84.99187mg

FET Type :

N and P-Channel

Gate to Source Voltage (Vgs) :

12V

REACH SVHC :

Unknown

Drain Current-Max (Abs) (ID) :

4A

Lead Free :

Lead Free

Number of Terminations :

8

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

4A

Contact Plating :

Tin

Resistance :

150mOhm

Input Capacitance (Ciss) (Max) @ Vds :

285pF @ 10V

Terminal Form :

C BEND

Base Part Number :

SI5513

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

3.1W

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

1.7W

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Channels :

2

Number of Elements :

2

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

4A 3.7A

Radiation Hardening :

No

Published :

2014

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Factory Lead Time :

14 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.4A, 4.5V

Terminal Position :

Dual

Pin Count :

8

Package / Case :

8-SMD, Flat Lead

Mount :

Surface Mount

JESD-609 Code :

e3

Number of Pins :

8

Nominal Vgs :

600 mV