SI5509DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Max Power Dissipation :

2.1W

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Turn-Off Delay Time :

25 ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Package / Case :

8-SMD, Flat Lead

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

10A

Power - Max :

4.5W

Threshold Voltage :

2V

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI5509

JESD-609 Code :

e3

Published :

2011

Continuous Drain Current (ID) :

5A

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 5V

Rise Time :

75ns

Transistor Element Material :

SILICON

Pin Count :

8

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

90mOhm

Number of Pins :

8

Vgs(th) (Max) @ Id :

2V @ 250μA

Radiation Hardening :

No

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

52m Ω @ 5A, 4.5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Fall Time (Typ) :

60 ns

Power Dissipation :

2.1W

Drain to Source Breakdown Voltage :

20V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

6.1A 4.8A

Drain Current-Max (Abs) (ID) :

5A

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount