IXFL82N60P
- Mfr.Part #
- IXFL82N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 55A ISOPLUS264
- Stock
- 25
- In Stock :
- 25
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 80 mΩ
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 600 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 600V
- Min Operating Temperature :
- -55 °C
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 0.078Ohm
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Pulsed Drain Current-Max (IDM) :
- 200A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- Max Power Dissipation :
- 625 W
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 41A, 10V
- Maximum Operating Temperature :
- + 150 C
- Width :
- 5.21 mm
- Max Operating Temperature :
- 150 °C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Power Dissipation (Max) :
- 625W (Tc)
- Configuration :
- Single
- Rds On Max :
- 78 mΩ
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Number of Pins :
- 3
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- Number of Terminals :
- 3
- Power Dissipation-Max :
- 625W Tc
- Package / Case :
- ISOPLUS264™
- Length :
- 20.29 mm
- Factory Lead Time :
- 26 Weeks
- Surface Mount :
- No
- Channel Mode :
- Enhancement
- Type :
- PolarHV HiPerFET Power MOSFET ISOPLUS264
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Transistor Polarity :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Tradename :
- HiPerFET
- Series :
- HiPerFET™, PolarHT™
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- ISOPLUS264™
- Vgs (Max) :
- ±30V
- Height :
- 26.42 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- JESD-30 Code :
- R-PSIP-T3
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 23ns
- Power Dissipation :
- 625W
- JESD-609 Code :
- e1
- Turn-Off Delay Time :
- 79 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 55A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFL82
- Fall Time (Typ) :
- 24 ns
- Number of Channels :
- 1 Channel
- Case Connection :
- Isolated
- RoHS :
- Details
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Category :
- MOSFET
- Pbfree Code :
- yes
- Brand :
- IXYS
- Input Capacitance :
- 23 nF
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Subcategory :
- MOSFETs
- FET Feature :
- --
- Datasheets
- IXFL82N60P
N-Channel Tube 78m Ω @ 41A, 10V ±30V 23000pF @ 25V 240nC @ 10V 600V ISOPLUS264™
IXFL82N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 23000pF @ 25V.This device has a continuous drain current (ID) of [55A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 79 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.MOSFETs have 80 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFL82N60P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 200A.
single MOSFETs transistor is 80 mΩ
a 600V drain to source voltage (Vdss)
IXFL82N60P Applications
There are a lot of IXYS
IXFL82N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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