IXFL82N60P

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Mfr.Part #
IXFL82N60P
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 600V 55A ISOPLUS264
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
5V @ 8mA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2006
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Resistance :
80 mΩ
Mounting Style :
Through Hole
Packaging :
Tube
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
600 V
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
600V
Min Operating Temperature :
-55 °C
Product Type :
MOSFET
Drain-source On Resistance-Max :
0.078Ohm
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Pulsed Drain Current-Max (IDM) :
200A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Max Power Dissipation :
625 W
Rds On (Max) @ Id, Vgs :
78m Ω @ 41A, 10V
Maximum Operating Temperature :
+ 150 C
Width :
5.21 mm
Max Operating Temperature :
150 °C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Type :
1 N-Channel
Mounting Type :
Through Hole
Number of Terminations :
3
Power Dissipation (Max) :
625W (Tc)
Configuration :
Single
Rds On Max :
78 mΩ
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Number of Pins :
3
Pin Count :
3
Drain to Source Breakdown Voltage :
600V
Number of Terminals :
3
Power Dissipation-Max :
625W Tc
Package / Case :
ISOPLUS264™
Length :
20.29 mm
Factory Lead Time :
26 Weeks
Surface Mount :
No
Channel Mode :
Enhancement
Type :
PolarHV HiPerFET Power MOSFET ISOPLUS264
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
Avalanche Energy Rating (Eas) :
5000 mJ
Tradename :
HiPerFET
Series :
HiPerFET™, PolarHT™
Number of Elements :
1
Qualification Status :
Not Qualified
Supplier Device Package :
ISOPLUS264™
Vgs (Max) :
±30V
Height :
26.42 mm
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
JESD-30 Code :
R-PSIP-T3
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Minimum Operating Temperature :
- 55 C
Rise Time :
23ns
Power Dissipation :
625W
JESD-609 Code :
e1
Turn-Off Delay Time :
79 ns
Gate to Source Voltage (Vgs) :
30V
Continuous Drain Current (ID) :
55A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFL82
Fall Time (Typ) :
24 ns
Number of Channels :
1 Channel
Case Connection :
Isolated
RoHS :
Details
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Product Category :
MOSFET
Pbfree Code :
yes
Brand :
IXYS
Input Capacitance :
23 nF
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Subcategory :
MOSFETs
FET Feature :
--
Datasheets
IXFL82N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL82N60P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:ISOPLUS264™, Type:PolarHV HiPerFET Power MOSFET ISOPLUS264, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFL82N60P pinout, IXFL82N60P datasheet PDF, IXFL82N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL82N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 78m Ω @ 41A, 10V ±30V 23000pF @ 25V 240nC @ 10V 600V ISOPLUS264™

IXFL82N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 23000pF @ 25V.This device has a continuous drain current (ID) of [55A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 79 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.MOSFETs have 80 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFL82N60P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 200A.
single MOSFETs transistor is 80 mΩ
a 600V drain to source voltage (Vdss)


IXFL82N60P Applications


There are a lot of IXYS
IXFL82N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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