IXFL82N60P

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Mfr.Part #
IXFL82N60P
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 600V 55A ISOPLUS264
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Max Operating Temperature :
150 °C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Terminal Form :
THROUGH-HOLE
Type :
PolarHV HiPerFET Power MOSFET ISOPLUS264
Vgs (Max) :
±30V
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
600V
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Product Type :
MOSFET
Subcategory :
MOSFETs
Reach Compliance Code :
Compliant
Power Dissipation-Max :
625W Tc
Max Power Dissipation :
625 W
Brand :
IXYS
Rds On (Max) @ Id, Vgs :
78m Ω @ 41A, 10V
Input Capacitance :
23 nF
Gate to Source Voltage (Vgs) :
30V
Maximum Operating Temperature :
+ 150 C
Pulsed Drain Current-Max (IDM) :
200A
Width :
5.21 mm
Package / Case :
ISOPLUS264™
Transistor Polarity :
N-Channel
Mounting Type :
Through Hole
Element Configuration :
Single
Number of Pins :
3
Min Operating Temperature :
-55 °C
Drain to Source Resistance :
80 mΩ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Product Status :
Active
JESD-609 Code :
e1
Published :
2006
Transistor Type :
1 N-Channel
Case Connection :
Isolated
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
ISOPLUS264™
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
600V
DS Breakdown Voltage-Min :
600 V
Packaging :
Tube
Number of Elements :
1
RoHS :
Details
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Factory Lead Time :
26 Weeks
Power Dissipation :
625W
Polarity/Channel Type :
N-Channel
Series :
HiPerFET™, PolarHT™
Minimum Operating Temperature :
- 55 C
Package :
Tube
Length :
20.29 mm
Continuous Drain Current (ID) :
55A
Mount :
Through Hole
Mounting Style :
Through Hole
Drain-source On Resistance-Max :
0.078Ohm
Pin Count :
3
Avalanche Energy Rating (Eas) :
5000 mJ
Turn-Off Delay Time :
79 ns
Package Shape :
RECTANGULAR
Base Product Number :
IXFL82
Channel Mode :
Enhancement
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
JESD-30 Code :
R-PSIP-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On Max :
78 mΩ
Height :
26.42 mm
Fall Time (Typ) :
24 ns
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Number of Terminals :
3
Number of Channels :
1 Channel
Number of Terminations :
3
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Power Dissipation (Max) :
625W (Tc)
Tradename :
HiPerFET
Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs(th) (Max) @ Id :
5V @ 8mA
Operating Mode :
ENHANCEMENT MODE
FET Feature :
--
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
23ns
Product Category :
MOSFET
Datasheets
IXFL82N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL82N60P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHV HiPerFET Power MOSFET ISOPLUS264, Package / Case:ISOPLUS264™, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, IXFL82N60P pinout, IXFL82N60P datasheet PDF, IXFL82N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL82N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 78m Ω @ 41A, 10V ±30V 23000pF @ 25V 240nC @ 10V 600V ISOPLUS264™

IXFL82N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 23000pF @ 25V.This device has a continuous drain current (ID) of [55A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 79 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.MOSFETs have 80 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFL82N60P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 200A.
single MOSFETs transistor is 80 mΩ
a 600V drain to source voltage (Vdss)


IXFL82N60P Applications


There are a lot of IXYS
IXFL82N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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