IXFL80N50Q2

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Mfr.Part #
IXFL80N50Q2
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 500V 55A ISOPLUS264
Stock
21,903
In Stock :
21,903

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
500V
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance :
10.5 nF
Qualification Status :
Not Qualified
Number of Elements :
1
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
30V
Package :
Tube
Configuration :
Single
Published :
2005
Package / Case :
ISOPLUS264™
DS Breakdown Voltage-Min :
500 V
Drain to Source Resistance :
66 mΩ
FET Type :
N-Channel
Turn-Off Delay Time :
60 ns
Product Status :
Active
Mounting Style :
Through Hole
Power Dissipation-Max (Abs) :
380 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
10500pF @ 25V
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Rise Time :
25ns
Transistor Application :
SWITCHING
Surface Mount :
No
Product Type :
MOSFET
Max Power Dissipation :
625 W
Reach Compliance Code :
Compliant
Continuous Drain Current (ID) :
64A
Package Shape :
RECTANGULAR
Drain-source On Resistance-Max :
0.066Ohm
JESD-30 Code :
R-PSIP-T3
Power Dissipation-Max :
625W Tc
Number of Channels :
1 Channel
Case Connection :
Isolated
Width :
5.21 mm
Power Dissipation (Max) :
625W (Tc)
Brand :
IXYS
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Transistor Type :
1 N-Channel
RoHS :
Details
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
FET Feature :
--
Height :
26.42 mm
Vgs (Max) :
±30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Element Configuration :
Single
Minimum Operating Temperature :
- 55 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On Max :
66 mΩ
Fall Time (Typ) :
11 ns
Vgs(th) (Max) @ Id :
5V @ 8mA
Length :
20.29 mm
Min Operating Temperature :
-55 °C
Maximum Operating Temperature :
+ 150 C
Rds On (Max) @ Id, Vgs :
66m Ω @ 40A, 10V
Max Operating Temperature :
150 °C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
55A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Supplier Device Package :
ISOPLUS264™
Base Product Number :
IXFL80
Avalanche Energy Rating (Eas) :
5000 mJ
Terminal Form :
THROUGH-HOLE
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Series :
HiPerFET™
Tradename :
HiPerFET
Pbfree Code :
yes
Transistor Polarity :
N-Channel
Drain to Source Breakdown Voltage :
500V
Number of Terminals :
3
Power Dissipation :
380W
Pulsed Drain Current-Max (IDM) :
320 A
Packaging :
Tube
Channel Mode :
Enhancement
Manufacturer :
IXYS
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e1
Terminal Position :
Single
Datasheets
IXFL80N50Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL80N50Q2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:ISOPLUS264™, Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXFL80N50Q2 pinout, IXFL80N50Q2 datasheet PDF, IXFL80N50Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL80N50Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 66m Ω @ 40A, 10V ±30V 10500pF @ 25V 260nC @ 10V 500V ISOPLUS264™

IXFL80N50Q2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 10500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 64A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 55A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 66 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFL80N50Q2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 320 A.
single MOSFETs transistor is 66 mΩ
a 500V drain to source voltage (Vdss)


IXFL80N50Q2 Applications


There are a lot of IXYS
IXFL80N50Q2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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