IXFL80N50Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

380 W

Gate to Source Voltage (Vgs) :

30V

Minimum Operating Temperature :

- 55 C

Number of Elements :

1

Case Connection :

Isolated

Drain to Source Breakdown Voltage :

500V

Number of Terminations :

3

Product Type :

MOSFET

Input Capacitance :

10.5 nF

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

320 A

Power Dissipation (Max) :

625W (Tc)

Number of Channels :

1 Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

Brand :

IXYS

Product Category :

MOSFET

Mount :

Through Hole

Max Power Dissipation :

625 W

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Rds On Max :

66 mΩ

FET Feature :

--

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

1 N-Channel

Tradename :

HiPerFET

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

500 V

Number of Pins :

3

FET Type :

N-Channel

Supplier Device Package :

ISOPLUS264™

Terminal Form :

THROUGH-HOLE

JESD-609 Code :

e1

Package / Case :

ISOPLUS264™

Pbfree Code :

yes

Height :

26.42 mm

Rise Time :

25ns

Packaging :

Tube

RoHS :

Details

Power Dissipation-Max :

625W Tc

Rds On (Max) @ Id, Vgs :

66m Ω @ 40A, 10V

Drain to Source Resistance :

66 mΩ

Pin Count :

3

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFL80

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSIP-T3

Min Operating Temperature :

-55 °C

Width :

5.21 mm

Drain-source On Resistance-Max :

0.066Ohm

Surface Mount :

No

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

5000 mJ

Drain Current-Max (Abs) (ID) :

55A

Vgs(th) (Max) @ Id :

5V @ 8mA

Series :

HiPerFET™

Package :

Tube

Fall Time (Typ) :

11 ns

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

60 ns

Published :

2005

Length :

20.29 mm

Channel Mode :

Enhancement

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

150 °C

Continuous Drain Current (ID) :

64A

Power Dissipation :

380W