IXFL80N50Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

5000 mJ

Power Dissipation-Max :

625W Tc

Rds On (Max) @ Id, Vgs :

66m Ω @ 40A, 10V

Polarity/Channel Type :

N-Channel

Base Product Number :

IXFL80

Max Power Dissipation :

625 W

Element Configuration :

Single

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Input Capacitance :

10.5 nF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Number of Pins :

3

Length :

20.29 mm

Max Operating Temperature :

150 °C

Supplier Device Package :

ISOPLUS264™

Packaging :

Tube

Published :

2005

Drain to Source Breakdown Voltage :

500V

Number of Channels :

1 Channel

Manufacturer :

IXYS

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Tradename :

HiPerFET

Turn-Off Delay Time :

60 ns

Transistor Polarity :

N-Channel

Mount :

Through Hole

Package / Case :

ISOPLUS264™

Drain-source On Resistance-Max :

0.066Ohm

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

Case Connection :

Isolated

Height :

26.42 mm

Drain to Source Voltage (Vdss) :

500V

Channel Mode :

Enhancement

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Min Operating Temperature :

-55 °C

Width :

5.21 mm

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Active

JESD-609 Code :

e1

Series :

HiPerFET™

Rise Time :

25ns

Number of Terminations :

3

Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

5V @ 8mA

Pbfree Code :

yes

DS Breakdown Voltage-Min :

500 V

RoHS :

Details

Brand :

IXYS

FET Feature :

--

Drain to Source Resistance :

66 mΩ

Pulsed Drain Current-Max (IDM) :

320 A

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Qualification Status :

Not Qualified

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

Rds On Max :

66 mΩ

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Power Dissipation (Max) :

625W (Tc)

Number of Terminals :

3

Transistor Element Material :

SILICON

Power Dissipation :

380W

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

64A

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

55A

Fall Time (Typ) :

11 ns

Power Dissipation-Max (Abs) :

380 W

Product Type :

MOSFET

Mounting Style :

Through Hole

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±30V