IXFL80N50Q2
- Mfr.Part #
- IXFL80N50Q2
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 55A ISOPLUS264
- Stock
- 21,903
- In Stock :
- 21,903
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 500V
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance :
- 10.5 nF
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Package :
- Tube
- Configuration :
- Single
- Published :
- 2005
- Package / Case :
- ISOPLUS264™
- DS Breakdown Voltage-Min :
- 500 V
- Drain to Source Resistance :
- 66 mΩ
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 60 ns
- Product Status :
- Active
- Mounting Style :
- Through Hole
- Power Dissipation-Max (Abs) :
- 380 W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 10500pF @ 25V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 25ns
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Product Type :
- MOSFET
- Max Power Dissipation :
- 625 W
- Reach Compliance Code :
- Compliant
- Continuous Drain Current (ID) :
- 64A
- Package Shape :
- RECTANGULAR
- Drain-source On Resistance-Max :
- 0.066Ohm
- JESD-30 Code :
- R-PSIP-T3
- Power Dissipation-Max :
- 625W Tc
- Number of Channels :
- 1 Channel
- Case Connection :
- Isolated
- Width :
- 5.21 mm
- Power Dissipation (Max) :
- 625W (Tc)
- Brand :
- IXYS
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Transistor Type :
- 1 N-Channel
- RoHS :
- Details
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- FET Feature :
- --
- Height :
- 26.42 mm
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Element Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On Max :
- 66 mΩ
- Fall Time (Typ) :
- 11 ns
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Length :
- 20.29 mm
- Min Operating Temperature :
- -55 °C
- Maximum Operating Temperature :
- + 150 C
- Rds On (Max) @ Id, Vgs :
- 66m Ω @ 40A, 10V
- Max Operating Temperature :
- 150 °C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 55A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Supplier Device Package :
- ISOPLUS264™
- Base Product Number :
- IXFL80
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Terminal Form :
- THROUGH-HOLE
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Series :
- HiPerFET™
- Tradename :
- HiPerFET
- Pbfree Code :
- yes
- Transistor Polarity :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Number of Terminals :
- 3
- Power Dissipation :
- 380W
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Packaging :
- Tube
- Channel Mode :
- Enhancement
- Manufacturer :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Terminal Position :
- Single
- Datasheets
- IXFL80N50Q2
N-Channel Tube 66m Ω @ 40A, 10V ±30V 10500pF @ 25V 260nC @ 10V 500V ISOPLUS264™
IXFL80N50Q2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 10500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 64A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 55A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 66 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFL80N50Q2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 320 A.
single MOSFETs transistor is 66 mΩ
a 500V drain to source voltage (Vdss)
IXFL80N50Q2 Applications
There are a lot of IXYS
IXFL80N50Q2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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