IXFL70N60Q2

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Mfr.Part #
IXFL70N60Q2
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 600V 37A ISOPLUS264
Stock
30,202
In Stock :
30,202

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
IXYS
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
FET Feature :
--
Number of Terminals :
3
Series :
HiPerFET™
Height :
26.42mm
FET Type :
N-Channel
DS Breakdown Voltage-Min :
600 V
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
92m Ω @ 35A, 10V
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Package Shape :
RECTANGULAR
Power Dissipation-Max (Abs) :
360 W
JESD-30 Code :
R-PSIP-T3
Gate Charge (Qg) (Max) @ Vgs :
265nC @ 10V
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Turn-Off Delay Time :
60 ns
Width :
5.21mm
Power Dissipation :
360W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Current - Continuous Drain (Id) @ 25°C :
37A Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±30V
Product Type :
MOSFET
Rise Time :
25ns
Additional Feature :
AVALANCHE RATED
Drain to Source Voltage (Vdss) :
600V
Surface Mount :
No
Drain-source On Resistance-Max :
0.092Ohm
Mounting Type :
Through Hole
Transistor Type :
1 N-Channel
Published :
2009
Package / Case :
ISOPLUS264™
Vgs(th) (Max) @ Id :
5.5V @ 8mA
Avalanche Energy Rating (Eas) :
5000 mJ
Case Connection :
Isolated
Reach Compliance Code :
Compliant
Power Dissipation (Max) :
360W (Tc)
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
30V
Continuous Drain Current (ID) :
37A
Fall Time (Typ) :
12 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
37 A
Qualification Status :
Not Qualified
Base Product Number :
IXFL70
Pin Count :
3
JESD-609 Code :
e1
Maximum Operating Temperature :
+ 150 C
Terminal Form :
THROUGH-HOLE
Pbfree Code :
yes
Mounting Style :
Through Hole
Tradename :
HyperFET
Drain to Source Breakdown Voltage :
600V
Length :
20.29mm
Terminal Position :
Single
Manufacturer :
IXYS
Channel Mode :
Enhancement
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Number of Pins :
264
Element Configuration :
Single
Number of Terminations :
3
Power Dissipation-Max :
360W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Active
RoHS :
Details
Pulsed Drain Current-Max (IDM) :
280A
Package :
Tube
Supplier Device Package :
ISOPLUS264™
Turn On Delay Time :
26 ns
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 25V
Datasheets
IXFL70N60Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL70N60Q2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:ISOPLUS264™, Operating Temperature:-55°C~150°C TJ, Number of Pins:264, Number of Terminations:3, IXFL70N60Q2 pinout, IXFL70N60Q2 datasheet PDF, IXFL70N60Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL70N60Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 92m Ω @ 35A, 10V ±30V 12000pF @ 25V 265nC @ 10V 600V ISOPLUS264™

IXFL70N60Q2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 12000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 37A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 37 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 280A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 26 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFL70N60Q2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 37A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 280A.
a 600V drain to source voltage (Vdss)


IXFL70N60Q2 Applications


There are a lot of IXYS
IXFL70N60Q2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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