IXFL70N60Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Product Status :

Active

Mount :

Through Hole

Base Product Number :

IXFL70

RoHS :

Details

Reach Compliance Code :

Compliant

Supplier Device Package :

ISOPLUS264™

Packaging :

Tube

Number of Terminations :

3

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

12 ns

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Length :

20.29mm

Number of Elements :

1

FET Type :

N-Channel

Package / Case :

ISOPLUS264™

Case Connection :

Isolated

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Package :

Tube

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

Number of Pins :

264

FET Feature :

--

Element Configuration :

Single

Tradename :

HyperFET

Transistor Element Material :

SILICON

Channel Mode :

Enhancement

RoHS Status :

ROHS3 Compliant

Rise Time :

25ns

Avalanche Energy Rating (Eas) :

5000 mJ

Qualification Status :

Not Qualified

Transistor Type :

1 N-Channel

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

60 ns

Pulsed Drain Current-Max (IDM) :

280A

Height :

26.42mm

Power Dissipation-Max (Abs) :

360 W

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e1

Drain to Source Breakdown Voltage :

600V

Pbfree Code :

yes

Configuration :

Single

Width :

5.21mm

Power Dissipation :

360W

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Turn On Delay Time :

26 ns

Power Dissipation-Max :

360W Tc

Drain-source On Resistance-Max :

0.092Ohm

Drain Current-Max (Abs) (ID) :

37 A

Series :

HiPerFET™

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

265nC @ 10V

Rds On (Max) @ Id, Vgs :

92m Ω @ 35A, 10V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

37A

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

DS Breakdown Voltage-Min :

600 V

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

360W (Tc)

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 25V

Maximum Operating Temperature :

+ 150 C

Pin Count :

3

Mounting Type :

Through Hole

Package Shape :

RECTANGULAR

Vgs (Max) :

±30V

Number of Channels :

1 Channel