IXFL70N60Q2
- Mfr.Part #
- IXFL70N60Q2
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 37A ISOPLUS264
- Stock
- 30,202
- In Stock :
- 30,202
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- --
- Number of Terminals :
- 3
- Series :
- HiPerFET™
- Height :
- 26.42mm
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 600 V
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 92m Ω @ 35A, 10V
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max (Abs) :
- 360 W
- JESD-30 Code :
- R-PSIP-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 265nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 60 ns
- Width :
- 5.21mm
- Power Dissipation :
- 360W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- Product Type :
- MOSFET
- Rise Time :
- 25ns
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 600V
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.092Ohm
- Mounting Type :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Published :
- 2009
- Package / Case :
- ISOPLUS264™
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Case Connection :
- Isolated
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 360W (Tc)
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 37A
- Fall Time (Typ) :
- 12 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 37 A
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFL70
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- Mounting Style :
- Through Hole
- Tradename :
- HyperFET
- Drain to Source Breakdown Voltage :
- 600V
- Length :
- 20.29mm
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Number of Pins :
- 264
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 360W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Status :
- Active
- RoHS :
- Details
- Pulsed Drain Current-Max (IDM) :
- 280A
- Package :
- Tube
- Supplier Device Package :
- ISOPLUS264™
- Turn On Delay Time :
- 26 ns
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 12000pF @ 25V
- Datasheets
- IXFL70N60Q2
N-Channel Tube 92m Ω @ 35A, 10V ±30V 12000pF @ 25V 265nC @ 10V 600V ISOPLUS264™
IXFL70N60Q2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 12000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 37A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 37 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 280A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 26 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600 V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFL70N60Q2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 37A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 280A.
a 600V drain to source voltage (Vdss)
IXFL70N60Q2 Applications
There are a lot of IXYS
IXFL70N60Q2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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