IXFH9N80

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Mfr.Part #
IXFH9N80
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 9A TO247AD
Stock
34,431
In Stock :
34,431

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Series :
HiPerFET™
Input Capacitance (Ciss) (Max) @ Vds :
2200pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Drain-source On Resistance-Max :
1.1 Ω
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Fall Time (Typ) :
13 ns
Number of Terminals :
3
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
5V @ 2.5mA
JESD-30 Code :
R-PSFM-T3
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Feature :
--
Base Product Number :
IXFH9
Number of Terminations :
3
Turn-Off Delay Time :
42 ns
Case Connection :
DRAIN
Power Dissipation-Max :
180W Tc
Polarity/Channel Type :
N-Channel
Power Dissipation :
180W
Number of Elements :
1
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
FET Type :
N-Channel
JEDEC-95 Code :
TO-247
Drain Current-Max (Abs) (ID) :
9A
Published :
2001
Mount :
Through Hole
Drain to Source Breakdown Voltage :
800V
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
700 mJ
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Compliant
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
800V
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
9A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-247AD (IXFH)
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Package / Case :
TO-247-3
DS Breakdown Voltage-Min :
800 V
Pulsed Drain Current-Max (IDM) :
36 A
Manufacturer :
IXYS Corporation
Rise Time :
20ns
Element Configuration :
Single
Packaging :
Tube
Pbfree Code :
yes
Power Dissipation (Max) :
180W (Tc)
Transistor Application :
SWITCHING
Surface Mount :
No
Additional Feature :
AVALANCHE RATED
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 500mA, 10V
Product Status :
Active
Package :
Tube
Datasheets
IXFH9N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH9N80 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, IXFH9N80 pinout, IXFH9N80 datasheet PDF, IXFH9N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH9N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH9N80


N-Channel Tube 1.1 Ω @ 500mA, 10V ±20V 2200pF @ 25V 56nC @ 10V 800V TO-247-3

IXFH9N80Q Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The maximum input capacitance of this device is 2200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 9A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 42 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 36 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH9N80Q Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 36 A.
a 800V drain to source voltage (Vdss)


IXFH9N80Q Applications


There are a lot of IXYS
IXFH9N80Q applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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