IXFH9N80

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Mfr.Part #
IXFH9N80
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 9A TO247AD
Stock
34,431
In Stock :
34,431

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
36 A
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Fall Time (Typ) :
13 ns
Published :
2001
Mount :
Through Hole
Continuous Drain Current (ID) :
9A
Rise Time :
20ns
Power Dissipation (Max) :
180W (Tc)
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 500mA, 10V
Element Configuration :
Single
Number of Terminals :
3
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
800 V
Turn-Off Delay Time :
42 ns
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
700 mJ
Package / Case :
TO-247-3
Transistor Element Material :
SILICON
Packaging :
Tube
Surface Mount :
No
Number of Pins :
3
Vgs(th) (Max) @ Id :
5V @ 2.5mA
JEDEC-95 Code :
TO-247
Pin Count :
3
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Package :
Tube
FET Feature :
--
Series :
HiPerFET™
Base Product Number :
IXFH9
Drain to Source Breakdown Voltage :
800V
Input Capacitance (Ciss) (Max) @ Vds :
2200pF @ 25V
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Supplier Device Package :
TO-247AD (IXFH)
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS Corporation
Drain Current-Max (Abs) (ID) :
9A
Product Status :
Active
Terminal Form :
THROUGH-HOLE
Drain to Source Voltage (Vdss) :
800V
Drain-source On Resistance-Max :
1.1 Ω
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Additional Feature :
AVALANCHE RATED
Power Dissipation :
180W
Power Dissipation-Max :
180W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXFH9N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH9N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-247-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFH9N80 pinout, IXFH9N80 datasheet PDF, IXFH9N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH9N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH9N80


N-Channel Tube 1.1 Ω @ 500mA, 10V ±20V 2200pF @ 25V 56nC @ 10V 800V TO-247-3

IXFH9N80Q Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The maximum input capacitance of this device is 2200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 9A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 42 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 36 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH9N80Q Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 36 A.
a 800V drain to source voltage (Vdss)


IXFH9N80Q Applications


There are a lot of IXYS
IXFH9N80Q applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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