IXFH9N80

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Mfr.Part #
IXFH9N80
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 9A TO247AD
Stock
34,431
In Stock :
34,431

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-247AD (IXFH)
Pulsed Drain Current-Max (IDM) :
36 A
Power Dissipation-Max :
180W Tc
Avalanche Energy Rating (Eas) :
700 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Voltage (Vdss) :
800V
Base Product Number :
IXFH9
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Published :
2001
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Transistor Application :
SWITCHING
Turn-Off Delay Time :
42 ns
Number of Elements :
1
Series :
HiPerFET™
DS Breakdown Voltage-Min :
800 V
Pbfree Code :
yes
Number of Terminals :
3
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
2200pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
1.1 Ω
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
9A
Reach Compliance Code :
Compliant
Element Configuration :
Single
Rise Time :
20ns
JEDEC-95 Code :
TO-247
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 500mA, 10V
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
9A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
180W
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Package :
Tube
Power Dissipation (Max) :
180W (Tc)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
800V
Fall Time (Typ) :
13 ns
Package / Case :
TO-247-3
Mount :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 2.5mA
Manufacturer :
IXYS Corporation
Number of Pins :
3
Mounting Type :
Through Hole
Terminal Position :
Single
Package Shape :
RECTANGULAR
Additional Feature :
AVALANCHE RATED
Datasheets
IXFH9N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH9N80 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-247-3, Number of Pins:3, Mounting Type:Through Hole, IXFH9N80 pinout, IXFH9N80 datasheet PDF, IXFH9N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH9N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH9N80


N-Channel Tube 1.1 Ω @ 500mA, 10V ±20V 2200pF @ 25V 56nC @ 10V 800V TO-247-3

IXFH9N80Q Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The maximum input capacitance of this device is 2200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 9A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 42 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 36 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH9N80Q Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 36 A.
a 800V drain to source voltage (Vdss)


IXFH9N80Q Applications


There are a lot of IXYS
IXFH9N80Q applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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