IXFH9N80
- Mfr.Part #
- IXFH9N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 9A TO247AD
- Stock
- 34,431
- In Stock :
- 34,431
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 36 A
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Fall Time (Typ) :
- 13 ns
- Published :
- 2001
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 9A
- Rise Time :
- 20ns
- Power Dissipation (Max) :
- 180W (Tc)
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 500mA, 10V
- Element Configuration :
- Single
- Number of Terminals :
- 3
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 800 V
- Turn-Off Delay Time :
- 42 ns
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Surface Mount :
- No
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- JEDEC-95 Code :
- TO-247
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Package :
- Tube
- FET Feature :
- --
- Series :
- HiPerFET™
- Base Product Number :
- IXFH9
- Drain to Source Breakdown Voltage :
- 800V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Supplier Device Package :
- TO-247AD (IXFH)
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Drain Current-Max (Abs) (ID) :
- 9A
- Product Status :
- Active
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Voltage (Vdss) :
- 800V
- Drain-source On Resistance-Max :
- 1.1 Ω
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 180W
- Power Dissipation-Max :
- 180W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IXFH9N80

N-Channel Tube 1.1 Ω @ 500mA, 10V ±20V 2200pF @ 25V 56nC @ 10V 800V TO-247-3
IXFH9N80Q Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The maximum input capacitance of this device is 2200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 9A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 42 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 36 A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH9N80Q Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 36 A.
a 800V drain to source voltage (Vdss)
IXFH9N80Q Applications
There are a lot of IXYS
IXFH9N80Q applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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