IXFH110N15T2
- Mfr.Part #
- IXFH110N15T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 110A TO247AD
- Stock
- 8,499
- In Stock :
- 8,499
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Compliant
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Min Operating Temperature :
- -55 °C
- JEDEC-95 Code :
- TO-247AD
- Mounting Type :
- Through Hole
- Power Dissipation :
- 480W
- Rise Time :
- 16ns
- Series :
- TrenchT2™
- JESD-609 Code :
- e1
- Number of Terminals :
- 3
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Packaging :
- Tube
- Fall Time (Typ) :
- 18 ns
- Continuous Drain Current (ID) :
- 110A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Tradename :
- HiPerFET
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 175 C
- Number of Channels :
- 1 Channel
- Pin Count :
- 3
- Brand :
- IXYS
- Product Category :
- MOSFET
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 150V
- Drain to Source Voltage (Vdss) :
- 150V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Style :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Surface Mount :
- No
- Product Status :
- Active
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Factory Lead Time :
- 30 Weeks
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 480W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 8600pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- Type :
- Power MOSFET
- Package / Case :
- TO-247-3
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Terminal Finish :
- TIN SILVER COPPER
- Published :
- 2008
- Configuration :
- Single
- Pbfree Code :
- yes
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Input Capacitance :
- 8.6 nF
- Drain to Source Resistance :
- 13 mΩ
- Package :
- Tube
- Supplier Device Package :
- TO-247AD (IXFH)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 300A
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFH110
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Drain-source On Resistance-Max :
- 0.013Ohm
- Turn-Off Delay Time :
- 33 ns
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Product Type :
- MOSFET
- Max Operating Temperature :
- 175 °C
- Number of Terminations :
- 3
- Product :
- Power MOSFETs
- Power Dissipation-Max :
- 480W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 480 W
- Reach Compliance Code :
- Unknown
- Rds On Max :
- 13 mΩ
- Mount :
- Through Hole
- Datasheets
- IXFH110N15T2

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3
IXFH110N15T2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N15T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)
IXFH110N15T2 Applications
There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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