IXFH110N15T2
- Mfr.Part #
- IXFH110N15T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 110A TO247AD
- Stock
- 8,499
- In Stock :
- 8,499
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 300A
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Input Capacitance :
- 8.6 nF
- Transistor Polarity :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-247AD
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Maximum Operating Temperature :
- + 175 C
- Drain to Source Voltage (Vdss) :
- 150V
- Fall Time (Typ) :
- 18 ns
- DS Breakdown Voltage-Min :
- 150V
- Base Product Number :
- IXFH110
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Tradename :
- HiPerFET
- Type :
- Power MOSFET
- Supplier Device Package :
- TO-247AD (IXFH)
- Brand :
- IXYS
- Factory Lead Time :
- 30 Weeks
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Min Operating Temperature :
- -55 °C
- Power Dissipation (Max) :
- 480W (Tc)
- Power Dissipation :
- 480W
- Max Operating Temperature :
- 175 °C
- Configuration :
- Single
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2008
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Transistor Type :
- 1 N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 8600pF @ 25V
- RoHS :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Mounting Style :
- Through Hole
- Product :
- Power MOSFETs
- Turn-Off Delay Time :
- 33 ns
- Max Power Dissipation :
- 480 W
- Subcategory :
- MOSFETs
- Operating Temperature :
- -55°C~175°C TJ
- Minimum Operating Temperature :
- - 55 C
- JESD-609 Code :
- e1
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 110A
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Number of Elements :
- 1
- Rds On Max :
- 13 mΩ
- Drain to Source Resistance :
- 13 mΩ
- Power Dissipation-Max :
- 480W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Manufacturer :
- IXYS
- Terminal Finish :
- TIN SILVER COPPER
- Rise Time :
- 16ns
- Channel Mode :
- Enhancement
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Qualification Status :
- Not Qualified
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Series :
- TrenchT2™
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.013Ohm
- Datasheets
- IXFH110N15T2

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3
IXFH110N15T2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N15T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)
IXFH110N15T2 Applications
There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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