IXFH110N15T2

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Mfr.Part #
IXFH110N15T2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 110A TO247AD
Stock
8,499
In Stock :
8,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Channel Mode :
Enhancement
Mounting Type :
Through Hole
Pin Count :
3
Surface Mount :
No
Input Capacitance :
8.6 nF
DS Breakdown Voltage-Min :
150V
Configuration :
Single
Max Operating Temperature :
175 °C
Subcategory :
MOSFETs
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation (Max) :
480W (Tc)
Vgs (Max) :
±20V
Rds On Max :
13 mΩ
Avalanche Energy Rating (Eas) :
800 mJ
Product Status :
Active
Package :
Tube
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Terminal Finish :
TIN SILVER COPPER
Product :
Power MOSFETs
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Transistor Element Material :
SILICON
Package / Case :
TO-247-3
Brand :
IXYS
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Factory Lead Time :
30 Weeks
Min Operating Temperature :
-55 °C
Minimum Operating Temperature :
- 55 C
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
300A
Package Shape :
RECTANGULAR
Terminal Form :
THROUGH-HOLE
Maximum Operating Temperature :
+ 175 C
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Reach Compliance Code :
Unknown
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Resistance :
13 mΩ
Terminal Position :
Single
Continuous Drain Current (ID) :
110A
JESD-30 Code :
R-PSFM-T3
Base Product Number :
IXFH110
Number of Terminations :
3
Supplier Device Package :
TO-247AD (IXFH)
Power Dissipation :
480W
Published :
2008
Mounting Style :
Through Hole
Max Power Dissipation :
480 W
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.013Ohm
Mount :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Type :
Power MOSFET
Fall Time (Typ) :
18 ns
Series :
TrenchT2™
Power Dissipation-Max :
480W Tc
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
150V
Manufacturer :
IXYS
Number of Terminals :
3
FET Feature :
--
Tradename :
HiPerFET
Rise Time :
16ns
FET Type :
N-Channel
Pbfree Code :
yes
RoHS :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
8600pF @ 25V
ECCN Code :
EAR99
JESD-609 Code :
e1
Turn-Off Delay Time :
33 ns
Product Category :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-247AD
Datasheets
IXFH110N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Type:Power MOSFET, Number of Channels:1 Channel, IXFH110N15T2 pinout, IXFH110N15T2 datasheet PDF, IXFH110N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N15T2


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3

IXFH110N15T2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N15T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)


IXFH110N15T2 Applications


There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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