IXFH110N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

13 mΩ

Channel Mode :

Enhancement

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Rise Time :

16ns

ECCN Code :

EAR99

Package / Case :

TO-247-3

Case Connection :

DRAIN

Pbfree Code :

yes

Transistor Type :

1 N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

Series :

TrenchT2™

Power Dissipation-Max :

480W Tc

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Power Dissipation :

480W

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Product :

Power MOSFETs

Pulsed Drain Current-Max (IDM) :

300A

Number of Channels :

1 Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

33 ns

JEDEC-95 Code :

TO-247AD

Product Type :

MOSFET

FET Type :

N-Channel

Mounting Style :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Tradename :

HiPerFET

JESD-30 Code :

R-PSFM-T3

Subcategory :

MOSFETs

Power Dissipation (Max) :

480W (Tc)

DS Breakdown Voltage-Min :

150V

Terminal Finish :

TIN SILVER COPPER

Polarity/Channel Type :

N-Channel

Brand :

IXYS

Terminal Position :

Single

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2008

Input Capacitance :

8.6 nF

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Reach Compliance Code :

Unknown

Maximum Operating Temperature :

+ 175 C

Package :

Tube

Product Status :

Active

Base Product Number :

IXFH110

Mount :

Through Hole

Fall Time (Typ) :

18 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Power Dissipation :

480 W

Type :

Power MOSFET

Max Operating Temperature :

175 °C

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.013Ohm

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

Number of Terminations :

3

Rds On Max :

13 mΩ

Pin Count :

3

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Transistor Polarity :

N-Channel

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

110A

Rds On (Max) @ Id, Vgs :

13m Ω @ 500mA, 10V

Avalanche Energy Rating (Eas) :

800 mJ

Min Operating Temperature :

-55 °C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±20V

Factory Lead Time :

30 Weeks

Package Shape :

RECTANGULAR

FET Feature :

--

Supplier Device Package :

TO-247AD (IXFH)

RoHS :

Compliant

Drain to Source Voltage (Vdss) :

150V

Product Category :

MOSFET

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING