IXFH110N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Drain-source On Resistance-Max :

0.013Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance :

8.6 nF

Pin Count :

3

Mounting Type :

Through Hole

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

30 Weeks

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

TIN SILVER COPPER

Number of Terminals :

3

Product Type :

MOSFET

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Product Status :

Active

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Terminal Position :

Single

Mount :

Through Hole

Base Product Number :

IXFH110

Fall Time (Typ) :

18 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-247AD (IXFH)

Product :

Power MOSFETs

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Rise Time :

16ns

Package :

Tube

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

JEDEC-95 Code :

TO-247AD

Subcategory :

MOSFETs

DS Breakdown Voltage-Min :

150V

RoHS :

Compliant

Max Operating Temperature :

175 °C

Power Dissipation-Max :

480W Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

Number of Channels :

1 Channel

Avalanche Energy Rating (Eas) :

800 mJ

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Operating Temperature :

-55°C~175°C TJ

Tradename :

HiPerFET

Series :

TrenchT2™

FET Feature :

--

Configuration :

Single

Power Dissipation (Max) :

480W (Tc)

Min Operating Temperature :

-55 °C

Max Power Dissipation :

480 W

Type :

Power MOSFET

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

150V

Packaging :

Tube

Maximum Operating Temperature :

+ 175 C

Brand :

IXYS

Rds On Max :

13 mΩ

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Element Configuration :

Single

Minimum Operating Temperature :

- 55 C

Continuous Drain Current (ID) :

110A

Transistor Element Material :

SILICON

Product Category :

MOSFET

Pulsed Drain Current-Max (IDM) :

300A

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Package / Case :

TO-247-3

Power Dissipation :

480W

Transistor Type :

1 N-Channel

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

Through Hole

Drain to Source Resistance :

13 mΩ

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

13m Ω @ 500mA, 10V

Turn-Off Delay Time :

33 ns