IXFH110N15T2

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Mfr.Part #
IXFH110N15T2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 110A TO247AD
Stock
8,499
In Stock :
8,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
300A
ECCN Code :
EAR99
Pbfree Code :
yes
Reach Compliance Code :
Unknown
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Input Capacitance :
8.6 nF
Transistor Polarity :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
JEDEC-95 Code :
TO-247AD
Surface Mount :
No
Case Connection :
DRAIN
Element Configuration :
Single
Maximum Operating Temperature :
+ 175 C
Drain to Source Voltage (Vdss) :
150V
Fall Time (Typ) :
18 ns
DS Breakdown Voltage-Min :
150V
Base Product Number :
IXFH110
Number of Terminations :
3
Product Category :
MOSFET
Vgs (Max) :
±20V
Pin Count :
3
Tradename :
HiPerFET
Type :
Power MOSFET
Supplier Device Package :
TO-247AD (IXFH)
Brand :
IXYS
Factory Lead Time :
30 Weeks
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
FET Type :
N-Channel
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Min Operating Temperature :
-55 °C
Power Dissipation (Max) :
480W (Tc)
Power Dissipation :
480W
Max Operating Temperature :
175 °C
Configuration :
Single
Mount :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Number of Channels :
1 Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2008
Avalanche Energy Rating (Eas) :
800 mJ
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
8600pF @ 25V
RoHS :
Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-247-3
Mounting Style :
Through Hole
Product :
Power MOSFETs
Turn-Off Delay Time :
33 ns
Max Power Dissipation :
480 W
Subcategory :
MOSFETs
Operating Temperature :
-55°C~175°C TJ
Minimum Operating Temperature :
- 55 C
JESD-609 Code :
e1
Product Type :
MOSFET
Continuous Drain Current (ID) :
110A
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Number of Elements :
1
Rds On Max :
13 mΩ
Drain to Source Resistance :
13 mΩ
Power Dissipation-Max :
480W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Manufacturer :
IXYS
Terminal Finish :
TIN SILVER COPPER
Rise Time :
16ns
Channel Mode :
Enhancement
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Qualification Status :
Not Qualified
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Polarity/Channel Type :
N-Channel
Series :
TrenchT2™
Transistor Element Material :
SILICON
Terminal Position :
Single
Drain-source On Resistance-Max :
0.013Ohm
Datasheets
IXFH110N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Type:Power MOSFET, Number of Channels:1 Channel, Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, IXFH110N15T2 pinout, IXFH110N15T2 datasheet PDF, IXFH110N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N15T2


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3

IXFH110N15T2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N15T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)


IXFH110N15T2 Applications


There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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