IXFH110N15T2
- Mfr.Part #
- IXFH110N15T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 110A TO247AD
- Stock
- 8,499
- In Stock :
- 8,499
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Product Category :
- MOSFET
- Tradename :
- HiPerFET
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Type :
- 1 N-Channel
- Product Type :
- MOSFET
- Base Product Number :
- IXFH110
- Number of Channels :
- 1 Channel
- Drain to Source Resistance :
- 13 mΩ
- Published :
- 2008
- Pulsed Drain Current-Max (IDM) :
- 300A
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Reach Compliance Code :
- Unknown
- Supplier Device Package :
- TO-247AD (IXFH)
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Input Capacitance :
- 8.6 nF
- RoHS :
- Compliant
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 8600pF @ 25V
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Terminal Form :
- THROUGH-HOLE
- Turn-Off Delay Time :
- 33 ns
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 18 ns
- Transistor Application :
- SWITCHING
- Type :
- Power MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 30 Weeks
- Manufacturer :
- IXYS
- FET Feature :
- --
- Max Power Dissipation :
- 480 W
- Surface Mount :
- No
- Product Status :
- Active
- Series :
- TrenchT2™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 175 C
- Rds On Max :
- 13 mΩ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Minimum Operating Temperature :
- - 55 C
- Package :
- Tube
- Package Shape :
- RECTANGULAR
- Subcategory :
- MOSFETs
- Continuous Drain Current (ID) :
- 110A
- DS Breakdown Voltage-Min :
- 150V
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Min Operating Temperature :
- -55 °C
- JEDEC-95 Code :
- TO-247AD
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Brand :
- IXYS
- Power Dissipation :
- 480W
- Package / Case :
- TO-247-3
- Drain to Source Voltage (Vdss) :
- 150V
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 480W (Tc)
- Power Dissipation-Max :
- 480W Tc
- Packaging :
- Tube
- JESD-609 Code :
- e1
- Max Operating Temperature :
- 175 °C
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Product :
- Power MOSFETs
- Operating Temperature :
- -55°C~175°C TJ
- Qualification Status :
- Not Qualified
- Rise Time :
- 16ns
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.013Ohm
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Datasheets
- IXFH110N15T2

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3
IXFH110N15T2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N15T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)
IXFH110N15T2 Applications
There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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