IXFH110N15T2

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Mfr.Part #
IXFH110N15T2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 110A TO247AD
Stock
8,499
In Stock :
8,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.013Ohm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
30 Weeks
Transistor Type :
1 N-Channel
Product Category :
MOSFET
RoHS :
Compliant
Tradename :
HiPerFET
Number of Channels :
1 Channel
Power Dissipation (Max) :
480W (Tc)
Turn-Off Delay Time :
33 ns
Rise Time :
16ns
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
ECCN Code :
EAR99
Product Status :
Active
Number of Terminations :
3
Number of Elements :
1
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Through Hole
Additional Feature :
AVALANCHE RATED
Published :
2008
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Terminal Form :
THROUGH-HOLE
Product :
Power MOSFETs
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
150V
Surface Mount :
No
Fall Time (Typ) :
18 ns
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Pin Count :
3
Drain to Source Resistance :
13 mΩ
RoHS Status :
ROHS3 Compliant
Subcategory :
MOSFETs
Max Power Dissipation :
480 W
JESD-609 Code :
e1
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C~175°C TJ
Terminal Finish :
TIN SILVER COPPER
Input Capacitance :
8.6 nF
Reach Compliance Code :
Unknown
Package :
Tube
Terminal Position :
Single
Power Dissipation-Max :
480W Tc
Manufacturer :
IXYS
FET Type :
N-Channel
Product Type :
MOSFET
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
800 mJ
Rds On Max :
13 mΩ
Transistor Element Material :
SILICON
Base Product Number :
IXFH110
Drain to Source Voltage (Vdss) :
150V
Max Operating Temperature :
175 °C
Configuration :
Single
Channel Mode :
Enhancement
Number of Terminals :
3
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-247-3
Input Capacitance (Ciss) (Max) @ Vds :
8600pF @ 25V
Mount :
Through Hole
FET Feature :
--
Supplier Device Package :
TO-247AD (IXFH)
Packaging :
Tube
Operating Mode :
ENHANCEMENT MODE
Brand :
IXYS
JESD-30 Code :
R-PSFM-T3
Current - Continuous Drain (Id) @ 25°C :
110A Tc
JEDEC-95 Code :
TO-247AD
Transistor Polarity :
N-Channel
Maximum Operating Temperature :
+ 175 C
Pulsed Drain Current-Max (IDM) :
300A
Continuous Drain Current (ID) :
110A
Power Dissipation :
480W
Min Operating Temperature :
-55 °C
Type :
Power MOSFET
Series :
TrenchT2™
Vgs (Max) :
±20V
Datasheets
IXFH110N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, Type:Power MOSFET, IXFH110N15T2 pinout, IXFH110N15T2 datasheet PDF, IXFH110N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N15T2


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3

IXFH110N15T2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N15T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)


IXFH110N15T2 Applications


There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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