IXFH110N15T2

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Mfr.Part #
IXFH110N15T2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 110A TO247AD
Stock
8,499
In Stock :
8,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
Through Hole
Terminal Position :
Single
Element Configuration :
Single
FET Type :
N-Channel
Transistor Polarity :
N-Channel
Max Operating Temperature :
175 °C
Product Type :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Power Dissipation-Max :
480W Tc
Surface Mount :
No
Package Shape :
RECTANGULAR
Rise Time :
16ns
JEDEC-95 Code :
TO-247AD
Published :
2008
Avalanche Energy Rating (Eas) :
800 mJ
Brand :
IXYS
Power Dissipation :
480W
Drain to Source Resistance :
13 mΩ
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Type :
1 N-Channel
Power Dissipation (Max) :
480W (Tc)
Package / Case :
TO-247-3
Current - Continuous Drain (Id) @ 25°C :
110A Tc
DS Breakdown Voltage-Min :
150V
Rds On Max :
13 mΩ
Max Power Dissipation :
480 W
Number of Terminals :
3
Continuous Drain Current (ID) :
110A
Subcategory :
MOSFETs
JESD-609 Code :
e1
RoHS :
Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Channel Mode :
Enhancement
Type :
Power MOSFET
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Product Category :
MOSFET
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
0.013Ohm
Polarity/Channel Type :
N-Channel
Fall Time (Typ) :
18 ns
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
8600pF @ 25V
Tradename :
HiPerFET
ECCN Code :
EAR99
Maximum Operating Temperature :
+ 175 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-55 °C
Drain to Source Voltage (Vdss) :
150V
Reach Compliance Code :
Unknown
Terminal Finish :
TIN SILVER COPPER
Number of Elements :
1
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Base Product Number :
IXFH110
Packaging :
Tube
Package :
Tube
Number of Terminations :
3
Product :
Power MOSFETs
Input Capacitance :
8.6 nF
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Factory Lead Time :
30 Weeks
Minimum Operating Temperature :
- 55 C
Manufacturer :
IXYS
Vgs (Max) :
±20V
Configuration :
Single
Case Connection :
DRAIN
JESD-30 Code :
R-PSFM-T3
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
300A
Pbfree Code :
yes
Series :
TrenchT2™
Turn-Off Delay Time :
33 ns
Pin Count :
3
Additional Feature :
AVALANCHE RATED
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~175°C TJ
Supplier Device Package :
TO-247AD (IXFH)
Datasheets
IXFH110N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Type:Power MOSFET, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, IXFH110N15T2 pinout, IXFH110N15T2 datasheet PDF, IXFH110N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N15T2


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3

IXFH110N15T2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N15T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)


IXFH110N15T2 Applications


There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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