IXFH110N15T2

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Mfr.Part #
IXFH110N15T2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 110A TO247AD
Stock
8,499
In Stock :
8,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
33 ns
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Package / Case :
TO-247-3
Power Dissipation :
480W
Type :
Power MOSFET
Product Category :
MOSFET
Pulsed Drain Current-Max (IDM) :
300A
Transistor Application :
SWITCHING
Rise Time :
16ns
Reach Compliance Code :
Unknown
Max Operating Temperature :
175 °C
Max Power Dissipation :
480 W
Supplier Device Package :
TO-247AD (IXFH)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Resistance :
13 mΩ
Additional Feature :
AVALANCHE RATED
Terminal Position :
Single
Drain-source On Resistance-Max :
0.013Ohm
Number of Terminations :
3
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
Published :
2008
Mounting Type :
Through Hole
Base Product Number :
IXFH110
Maximum Operating Temperature :
+ 175 C
Package Shape :
RECTANGULAR
JESD-609 Code :
e1
Product Status :
Active
Series :
TrenchT2™
RoHS :
Compliant
Power Dissipation (Max) :
480W (Tc)
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Fall Time (Typ) :
18 ns
Qualification Status :
Not Qualified
Min Operating Temperature :
-55 °C
Continuous Drain Current (ID) :
110A
Subcategory :
MOSFETs
Vgs (Max) :
±20V
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Transistor Type :
1 N-Channel
Pbfree Code :
yes
Terminal Finish :
TIN SILVER COPPER
JEDEC-95 Code :
TO-247AD
Product Type :
MOSFET
Manufacturer :
IXYS
Brand :
IXYS
Avalanche Energy Rating (Eas) :
800 mJ
Power Dissipation-Max :
480W Tc
Terminal Form :
THROUGH-HOLE
Rds On Max :
13 mΩ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
150V
Input Capacitance :
8.6 nF
Element Configuration :
Single
Channel Mode :
Enhancement
Packaging :
Tube
Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PSFM-T3
Package :
Tube
Tradename :
HiPerFET
Drain to Source Voltage (Vdss) :
150V
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Product :
Power MOSFETs
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Number of Channels :
1 Channel
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Mount :
Through Hole
Mounting Style :
Through Hole
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds :
8600pF @ 25V
ECCN Code :
EAR99
Factory Lead Time :
30 Weeks
Datasheets
IXFH110N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Type:Power MOSFET, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, IXFH110N15T2 pinout, IXFH110N15T2 datasheet PDF, IXFH110N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N15T2


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3

IXFH110N15T2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N15T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)


IXFH110N15T2 Applications


There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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