IXFH110N15T2
- Mfr.Part #
- IXFH110N15T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 110A TO247AD
- Stock
- 8,499
- In Stock :
- 8,499
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55 °C
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 300A
- Factory Lead Time :
- 30 Weeks
- Input Capacitance :
- 8.6 nF
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Product Category :
- MOSFET
- Terminal Form :
- THROUGH-HOLE
- RoHS :
- Compliant
- DS Breakdown Voltage-Min :
- 150V
- FET Feature :
- --
- Product :
- Power MOSFETs
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Resistance :
- 13 mΩ
- Number of Channels :
- 1 Channel
- Turn-Off Delay Time :
- 33 ns
- Package Shape :
- RECTANGULAR
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- TrenchT2™
- Rise Time :
- 16ns
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Type :
- Power MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Tradename :
- HiPerFET
- Fall Time (Typ) :
- 18 ns
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 480W (Tc)
- Base Product Number :
- IXFH110
- Transistor Polarity :
- N-Channel
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 175 C
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Mounting Style :
- Through Hole
- FET Type :
- N-Channel
- Package / Case :
- TO-247-3
- Max Power Dissipation :
- 480 W
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 150V
- Rds On Max :
- 13 mΩ
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Power Dissipation :
- 480W
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-247AD
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Power Dissipation-Max :
- 480W Tc
- Max Operating Temperature :
- 175 °C
- Qualification Status :
- Not Qualified
- Subcategory :
- MOSFETs
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Terminal Finish :
- TIN SILVER COPPER
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.013Ohm
- Number of Terminals :
- 3
- Transistor Type :
- 1 N-Channel
- Package :
- Tube
- Published :
- 2008
- Supplier Device Package :
- TO-247AD (IXFH)
- Continuous Drain Current (ID) :
- 110A
- Input Capacitance (Ciss) (Max) @ Vds :
- 8600pF @ 25V
- Datasheets
- IXFH110N15T2

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3
IXFH110N15T2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N15T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)
IXFH110N15T2 Applications
There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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