IXFH110N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

33 ns

Package Shape :

RECTANGULAR

Package :

Tube

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Tradename :

HiPerFET

Number of Terminations :

3

Manufacturer :

IXYS

FET Feature :

--

JESD-609 Code :

e1

Min Operating Temperature :

-55 °C

Case Connection :

DRAIN

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Max Power Dissipation :

480 W

Factory Lead Time :

30 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Terminal Position :

Single

Base Product Number :

IXFH110

Max Operating Temperature :

175 °C

Series :

TrenchT2™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

1 N-Channel

Packaging :

Tube

JEDEC-95 Code :

TO-247AD

Power Dissipation :

480W

Drain-source On Resistance-Max :

0.013Ohm

Maximum Operating Temperature :

+ 175 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

3

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Unknown

Product Type :

MOSFET

Supplier Device Package :

TO-247AD (IXFH)

Drain to Source Resistance :

13 mΩ

Avalanche Energy Rating (Eas) :

800 mJ

Pulsed Drain Current-Max (IDM) :

300A

Published :

2008

DS Breakdown Voltage-Min :

150V

Rise Time :

16ns

Number of Elements :

1

Continuous Drain Current (ID) :

110A

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

18 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

ECCN Code :

EAR99

Product Category :

MOSFET

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Terminal Finish :

TIN SILVER COPPER

Terminal Form :

THROUGH-HOLE

Qualification Status :

Not Qualified

Power Dissipation-Max :

480W Tc

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Type :

Power MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

Surface Mount :

No

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

13m Ω @ 500mA, 10V

Pbfree Code :

yes

Vgs (Max) :

±20V

Power Dissipation (Max) :

480W (Tc)

Rds On Max :

13 mΩ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

150V

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Product Status :

Active

Channel Mode :

Enhancement

Subcategory :

MOSFETs

RoHS :

Compliant

Product :

Power MOSFETs

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Input Capacitance :

8.6 nF