IXFH110N15T2

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Mfr.Part #
IXFH110N15T2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 110A TO247AD
Stock
8,499
In Stock :
8,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Min Operating Temperature :
-55 °C
Terminal Position :
Single
Manufacturer :
IXYS
Pulsed Drain Current-Max (IDM) :
300A
Factory Lead Time :
30 Weeks
Input Capacitance :
8.6 nF
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Product Category :
MOSFET
Terminal Form :
THROUGH-HOLE
RoHS :
Compliant
DS Breakdown Voltage-Min :
150V
FET Feature :
--
Product :
Power MOSFETs
Minimum Operating Temperature :
- 55 C
Drain to Source Resistance :
13 mΩ
Number of Channels :
1 Channel
Turn-Off Delay Time :
33 ns
Package Shape :
RECTANGULAR
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
TrenchT2™
Rise Time :
16ns
Number of Elements :
1
Operating Temperature :
-55°C~175°C TJ
Type :
Power MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
Tradename :
HiPerFET
Fall Time (Typ) :
18 ns
Element Configuration :
Single
Power Dissipation (Max) :
480W (Tc)
Base Product Number :
IXFH110
Transistor Polarity :
N-Channel
Mount :
Through Hole
Case Connection :
DRAIN
Mounting Type :
Through Hole
Product Type :
MOSFET
Maximum Operating Temperature :
+ 175 C
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Mounting Style :
Through Hole
FET Type :
N-Channel
Package / Case :
TO-247-3
Max Power Dissipation :
480 W
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Brand :
IXYS
Drain to Source Voltage (Vdss) :
150V
Rds On Max :
13 mΩ
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Power Dissipation :
480W
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-247AD
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Avalanche Energy Rating (Eas) :
800 mJ
Power Dissipation-Max :
480W Tc
Max Operating Temperature :
175 °C
Qualification Status :
Not Qualified
Subcategory :
MOSFETs
Reach Compliance Code :
Unknown
Transistor Element Material :
SILICON
Terminal Finish :
TIN SILVER COPPER
JESD-30 Code :
R-PSFM-T3
Number of Terminations :
3
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
JESD-609 Code :
e1
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
0.013Ohm
Number of Terminals :
3
Transistor Type :
1 N-Channel
Package :
Tube
Published :
2008
Supplier Device Package :
TO-247AD (IXFH)
Continuous Drain Current (ID) :
110A
Input Capacitance (Ciss) (Max) @ Vds :
8600pF @ 25V
Datasheets
IXFH110N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Type:Power MOSFET, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, IXFH110N15T2 pinout, IXFH110N15T2 datasheet PDF, IXFH110N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N15T2


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3

IXFH110N15T2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N15T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)


IXFH110N15T2 Applications


There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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