IXFH110N15T2
- Mfr.Part #
- IXFH110N15T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 110A TO247AD
- Stock
- 8,499
- In Stock :
- 8,499
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Number of Terminals :
- 3
- Tradename :
- HiPerFET
- Drain-source On Resistance-Max :
- 0.013Ohm
- Pbfree Code :
- yes
- Max Power Dissipation :
- 480 W
- Input Capacitance :
- 8.6 nF
- Subcategory :
- MOSFETs
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Number of Elements :
- 1
- Rise Time :
- 16ns
- Continuous Drain Current (ID) :
- 110A
- Rds On Max :
- 13 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 8600pF @ 25V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Published :
- 2008
- Transistor Element Material :
- SILICON
- Product Status :
- Active
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-247AD (IXFH)
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- DS Breakdown Voltage-Min :
- 150V
- Number of Terminations :
- 3
- Channel Mode :
- Enhancement
- Drain to Source Voltage (Vdss) :
- 150V
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- Power Dissipation (Max) :
- 480W (Tc)
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- Product Type :
- MOSFET
- ECCN Code :
- EAR99
- Type :
- Power MOSFET
- Power Dissipation :
- 480W
- Product :
- Power MOSFETs
- JEDEC-95 Code :
- TO-247AD
- Turn-Off Delay Time :
- 33 ns
- Pulsed Drain Current-Max (IDM) :
- 300A
- Brand :
- IXYS
- JESD-609 Code :
- e1
- Package / Case :
- TO-247-3
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- Series :
- TrenchT2™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXFH110
- RoHS :
- Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Max Operating Temperature :
- 175 °C
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 175 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Min Operating Temperature :
- -55 °C
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Resistance :
- 13 mΩ
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- TIN SILVER COPPER
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Unknown
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Product Category :
- MOSFET
- Fall Time (Typ) :
- 18 ns
- Factory Lead Time :
- 30 Weeks
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 480W Tc
- Datasheets
- IXFH110N15T2

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3
IXFH110N15T2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N15T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)
IXFH110N15T2 Applications
There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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