IXFH110N15T2

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Mfr.Part #
IXFH110N15T2
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 110A TO247AD
Stock
8,499
In Stock :
8,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Compliant
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Min Operating Temperature :
-55 °C
JEDEC-95 Code :
TO-247AD
Mounting Type :
Through Hole
Power Dissipation :
480W
Rise Time :
16ns
Series :
TrenchT2™
JESD-609 Code :
e1
Number of Terminals :
3
Minimum Operating Temperature :
- 55 C
Case Connection :
DRAIN
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Packaging :
Tube
Fall Time (Typ) :
18 ns
Continuous Drain Current (ID) :
110A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Tradename :
HiPerFET
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 175 C
Number of Channels :
1 Channel
Pin Count :
3
Brand :
IXYS
Product Category :
MOSFET
FET Feature :
--
DS Breakdown Voltage-Min :
150V
Drain to Source Voltage (Vdss) :
150V
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~175°C TJ
Mounting Style :
Through Hole
Transistor Type :
1 N-Channel
Surface Mount :
No
Product Status :
Active
Avalanche Energy Rating (Eas) :
800 mJ
Factory Lead Time :
30 Weeks
Channel Mode :
Enhancement
Power Dissipation (Max) :
480W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
8600pF @ 25V
Terminal Form :
THROUGH-HOLE
Type :
Power MOSFET
Package / Case :
TO-247-3
Package Shape :
RECTANGULAR
Number of Elements :
1
Terminal Finish :
TIN SILVER COPPER
Published :
2008
Configuration :
Single
Pbfree Code :
yes
Subcategory :
MOSFETs
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Input Capacitance :
8.6 nF
Drain to Source Resistance :
13 mΩ
Package :
Tube
Supplier Device Package :
TO-247AD (IXFH)
Vgs(th) (Max) @ Id :
4.5V @ 250μA
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
300A
Transistor Polarity :
N-Channel
Base Product Number :
IXFH110
Rds On (Max) @ Id, Vgs :
13m Ω @ 500mA, 10V
Drain-source On Resistance-Max :
0.013Ohm
Turn-Off Delay Time :
33 ns
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Product Type :
MOSFET
Max Operating Temperature :
175 °C
Number of Terminations :
3
Product :
Power MOSFETs
Power Dissipation-Max :
480W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
480 W
Reach Compliance Code :
Unknown
Rds On Max :
13 mΩ
Mount :
Through Hole
Datasheets
IXFH110N15T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Type:Power MOSFET, Package / Case:TO-247-3, Number of Terminations:3, IXFH110N15T2 pinout, IXFH110N15T2 datasheet PDF, IXFH110N15T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N15T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N15T2


N-Channel Tube 13m Ω @ 500mA, 10V ±20V 8600pF @ 25V 150nC @ 10V 150V TO-247-3

IXFH110N15T2 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.MOSFETs have 13 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N15T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
single MOSFETs transistor is 13 mΩ
a 150V drain to source voltage (Vdss)


IXFH110N15T2 Applications


There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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