IXFH110N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Additional Feature :

AVALANCHE RATED

Power Dissipation :

480W

Drain-source On Resistance-Max :

0.013Ohm

Mount :

Through Hole

Vgs (Max) :

±20V

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Rds On (Max) @ Id, Vgs :

13m Ω @ 500mA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Compliant

Rds On Max :

13 mΩ

Reach Compliance Code :

Unknown

Channel Mode :

Enhancement

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

150V

Product :

Power MOSFETs

Manufacturer :

IXYS

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Power Dissipation-Max :

480W Tc

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Type :

Power MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Max Operating Temperature :

175 °C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Maximum Operating Temperature :

+ 175 C

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Terminal Finish :

TIN SILVER COPPER

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Factory Lead Time :

30 Weeks

Min Operating Temperature :

-55 °C

Input Capacitance :

8.6 nF

Mounting Type :

Through Hole

Pin Count :

3

Terminal Form :

THROUGH-HOLE

JEDEC-95 Code :

TO-247AD

Base Product Number :

IXFH110

Number of Terminals :

3

Subcategory :

MOSFETs

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

Package / Case :

TO-247-3

Power Dissipation (Max) :

480W (Tc)

Qualification Status :

Not Qualified

Package :

Tube

Pulsed Drain Current-Max (IDM) :

300A

Product Status :

Active

Number of Elements :

1

Brand :

IXYS

Surface Mount :

No

Turn-Off Delay Time :

33 ns

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Configuration :

Single

Avalanche Energy Rating (Eas) :

800 mJ

Rise Time :

16ns

Max Power Dissipation :

480 W

Transistor Polarity :

N-Channel

Series :

TrenchT2™

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Element Configuration :

Single

DS Breakdown Voltage-Min :

150V

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

Number of Channels :

1 Channel

Number of Terminations :

3

Packaging :

Tube

Supplier Device Package :

TO-247AD (IXFH)

Drain to Source Resistance :

13 mΩ

Continuous Drain Current (ID) :

110A

Fall Time (Typ) :

18 ns

Tradename :

HiPerFET

Case Connection :

DRAIN