IXFH10N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Element Configuration :

Single

FET Feature :

--

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Compliant

Base Product Number :

IXFH10

Polarity/Channel Type :

N-Channel

Package :

Tube

Number of Terminals :

3

Package / Case :

TO-247-3

Terminal Position :

Single

FET Type :

N-Channel

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Drain to Source Breakdown Voltage :

1kV

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Brand :

IXYS

Drain-source On Resistance-Max :

1.2 Ω

Number of Channels :

1 Channel

Published :

2004

Length :

16.26 mm

Manufacturer :

IXYS

Packaging :

Tube

Transistor Polarity :

N-Channel

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Width :

5.3 mm

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 5A, 10V

Power Dissipation :

300W

Continuous Drain Current (ID) :

10A

Max Power Dissipation :

300 W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

1000V

Configuration :

Single

Mounting Type :

Through Hole

Height :

21.46 mm

JEDEC-95 Code :

TO-247AD

Surface Mount :

No

Qualification Status :

Not Qualified

Number of Pins :

3

Supplier Device Package :

TO-247AD (IXFH)

Max Operating Temperature :

150 °C

Power Dissipation (Max) :

300W (Tc)

Fall Time (Typ) :

15 ns

Product Type :

MOSFET

Series :

HiPerFET™

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

Input Capacitance :

4 nF

Drain to Source Resistance :

1.2 Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

23ns

Pin Count :

3

Terminal Form :

THROUGH-HOLE

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

40A

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Reach Compliance Code :

Compliant

Gate to Source Voltage (Vgs) :

20V

Mounting Style :

Through Hole

DS Breakdown Voltage-Min :

1000 V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Product Status :

Active

Channel Mode :

Enhancement

Power Dissipation-Max :

300W Tc

Rds On Max :

1.2 Ω

Subcategory :

MOSFETs

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

40 ns

Min Operating Temperature :

-55 °C

Additional Feature :

AVALANCHE RATED