IXFH100N25P
- Mfr.Part #
- IXFH100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO247AD
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 600W Tc
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 26ns
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Terminal Position :
- Single
- Drain to Source Breakdown Voltage :
- 250V
- Reach Compliance Code :
- Compliant
- Channel Mode :
- Enhancement
- Width :
- 5.3 mm
- Brand :
- IXYS
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- JESD-30 Code :
- R-PSFM-T3
- Factory Lead Time :
- 30 Weeks
- Number of Channels :
- 1 Channel
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 100A
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- DS Breakdown Voltage-Min :
- 250 V
- Base Product Number :
- IXFH100
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 100 ns
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Published :
- 2006
- Number of Elements :
- 1
- Height :
- 21.46 mm
- Length :
- 16.26 mm
- Drain to Source Voltage (Vdss) :
- 250V
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Product Type :
- MOSFET
- Manufacturer :
- IXYS
- Type :
- PolarHT HiPerFET Power MOSFET
- Transistor Type :
- 1 N-Channel
- Mounting Style :
- Through Hole
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 600W (Tc)
- Tradename :
- HiPerFET
- Pbfree Code :
- yes
- RoHS :
- Details
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Feature :
- -
- Fall Time (Typ) :
- 28 ns
- Number of Terminals :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- JESD-609 Code :
- e1
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.027Ohm
- Supplier Device Package :
- TO-247AD
- JEDEC-95 Code :
- TO-247AD
- Subcategory :
- MOSFETs
- Power Dissipation :
- 600W
- Pulsed Drain Current-Max (IDM) :
- 250A
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 50A, 10V
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 3
- Series :
- PolarHT™ HiPerFET™
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- Pin Count :
- 3
- Datasheets
- IXFH100N25P
IXFH100N25P Documents

N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3
IXFH100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXFH100N25P Applications
There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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