IXFH100N25P
- Mfr.Part #
- IXFH100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO247AD
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 16.26 mm
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 28 ns
- Qualification Status :
- Not Qualified
- Published :
- 2006
- JEDEC-95 Code :
- TO-247AD
- Product Type :
- MOSFET
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 50A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation (Max) :
- 600W (Tc)
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 150 C
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Reach Compliance Code :
- Compliant
- Width :
- 5.3 mm
- Surface Mount :
- No
- Power Dissipation-Max :
- 600W Tc
- Rise Time :
- 26ns
- Drain-source On Resistance-Max :
- 0.027Ohm
- Continuous Drain Current (ID) :
- 100A
- Turn-Off Delay Time :
- 100 ns
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Power Dissipation :
- 600W
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- -
- Tradename :
- HiPerFET
- Terminal Position :
- Single
- Series :
- PolarHT™ HiPerFET™
- Number of Terminals :
- 3
- DS Breakdown Voltage-Min :
- 250 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Pulsed Drain Current-Max (IDM) :
- 250A
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Package / Case :
- TO-247-3
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 250V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Brand :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Type :
- PolarHT HiPerFET Power MOSFET
- Drain to Source Breakdown Voltage :
- 250V
- Transistor Type :
- 1 N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1 Channel
- Supplier Device Package :
- TO-247AD
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 30 Weeks
- Package :
- Tube
- Configuration :
- Single
- Channel Mode :
- Enhancement
- Subcategory :
- MOSFETs
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Mounting Style :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Height :
- 21.46 mm
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Base Product Number :
- IXFH100
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IXFH100N25P

N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3
IXFH100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXFH100N25P Applications
There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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