IXFH100N25P
- Mfr.Part #
- IXFH100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO247AD
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Length :
- 16.26 mm
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 250 V
- Power Dissipation :
- 600W
- Width :
- 5.3 mm
- Configuration :
- Single
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Subcategory :
- MOSFETs
- Drain to Source Voltage (Vdss) :
- 250V
- Product Status :
- Active
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 250A
- Power Dissipation (Max) :
- 600W (Tc)
- Series :
- PolarHT™ HiPerFET™
- Mounting Type :
- Through Hole
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- FET Feature :
- -
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Terminal Form :
- THROUGH-HOLE
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 26ns
- RoHS :
- Details
- Supplier Device Package :
- TO-247AD
- Tradename :
- HiPerFET
- Product Category :
- MOSFET
- Number of Terminals :
- 3
- Published :
- 2006
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 150 C
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- JESD-609 Code :
- e1
- Channel Mode :
- Enhancement
- Continuous Drain Current (ID) :
- 100A
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 100 ns
- Package :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 600W Tc
- Height :
- 21.46 mm
- ECCN Code :
- EAR99
- Transistor Type :
- 1 N-Channel
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.027Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 28 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 50A, 10V
- JESD-30 Code :
- R-PSFM-T3
- Factory Lead Time :
- 30 Weeks
- Mounting Style :
- Through Hole
- Brand :
- IXYS
- Type :
- PolarHT HiPerFET Power MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 3
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-247AD
- Product Type :
- MOSFET
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 250V
- Base Product Number :
- IXFH100
- Packaging :
- Tube
- Datasheets
- IXFH100N25P

N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3
IXFH100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXFH100N25P Applications
There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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