IXFH100N25P

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Mfr.Part #
IXFH100N25P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 100A TO247AD
Stock
10
In Stock :
10

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
600W Tc
Vgs (Max) :
±20V
Power Dissipation :
600W
Package / Case :
TO-247-3
Additional Feature :
AVALANCHE RATED
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
250 V
Height :
21.46 mm
Surface Mount :
No
Minimum Operating Temperature :
- 55 C
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
2000 mJ
Mounting Style :
Through Hole
Supplier Device Package :
TO-247AD
Packaging :
Tube
Pin Count :
3
Rise Time :
26ns
Type :
PolarHT HiPerFET Power MOSFET
Brand :
IXYS
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-247AD
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Fall Time (Typ) :
28 ns
Drain to Source Voltage (Vdss) :
250V
Transistor Type :
1 N-Channel
Published :
2006
Mount :
Through Hole
Length :
16.26 mm
Transistor Polarity :
N-Channel
Tradename :
HiPerFET
FET Feature :
-
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e1
Package Shape :
RECTANGULAR
Subcategory :
MOSFETs
Continuous Drain Current (ID) :
100A
Vgs(th) (Max) @ Id :
5V @ 4mA
Factory Lead Time :
30 Weeks
Drain to Source Breakdown Voltage :
250V
ECCN Code :
EAR99
Product Category :
MOSFET
JESD-30 Code :
R-PSFM-T3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Pbfree Code :
yes
Product Type :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Element Configuration :
Single
Series :
PolarHT™ HiPerFET™
Pulsed Drain Current-Max (IDM) :
250A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Turn-Off Delay Time :
100 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.027Ohm
Number of Channels :
1 Channel
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
27m Ω @ 50A, 10V
Transistor Application :
SWITCHING
Product Status :
Active
Width :
5.3 mm
Number of Terminals :
3
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Manufacturer :
IXYS
Terminal Position :
Single
Reach Compliance Code :
Compliant
Base Product Number :
IXFH100
Polarity/Channel Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Maximum Operating Temperature :
+ 150 C
Qualification Status :
Not Qualified
Power Dissipation (Max) :
600W (Tc)
Channel Mode :
Enhancement
Package :
Tube
Datasheets
IXFH100N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH100N25P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Type:PolarHT HiPerFET Power MOSFET, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, IXFH100N25P pinout, IXFH100N25P datasheet PDF, IXFH100N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH100N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH100N25P


N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3

IXFH100N25P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH100N25P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)


IXFH100N25P Applications


There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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