IXFH100N25P

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Mfr.Part #
IXFH100N25P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 100A TO247AD
Stock
10
In Stock :
10

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
16.26 mm
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Element Configuration :
Single
Fall Time (Typ) :
28 ns
Qualification Status :
Not Qualified
Published :
2006
JEDEC-95 Code :
TO-247AD
Product Type :
MOSFET
ECCN Code :
EAR99
JESD-30 Code :
R-PSFM-T3
Manufacturer :
IXYS
Rds On (Max) @ Id, Vgs :
27m Ω @ 50A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Power Dissipation (Max) :
600W (Tc)
RoHS :
Details
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+ 150 C
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Reach Compliance Code :
Compliant
Width :
5.3 mm
Surface Mount :
No
Power Dissipation-Max :
600W Tc
Rise Time :
26ns
Drain-source On Resistance-Max :
0.027Ohm
Continuous Drain Current (ID) :
100A
Turn-Off Delay Time :
100 ns
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Power Dissipation :
600W
Minimum Operating Temperature :
- 55 C
FET Feature :
-
Tradename :
HiPerFET
Terminal Position :
Single
Series :
PolarHT™ HiPerFET™
Number of Terminals :
3
DS Breakdown Voltage-Min :
250 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
5V @ 4mA
Pulsed Drain Current-Max (IDM) :
250A
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Number of Terminations :
3
FET Type :
N-Channel
Package / Case :
TO-247-3
Transistor Polarity :
N-Channel
Pin Count :
3
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
250V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Terminal Form :
THROUGH-HOLE
Type :
PolarHT HiPerFET Power MOSFET
Drain to Source Breakdown Voltage :
250V
Transistor Type :
1 N-Channel
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1 Channel
Supplier Device Package :
TO-247AD
Vgs (Max) :
±20V
Factory Lead Time :
30 Weeks
Package :
Tube
Configuration :
Single
Channel Mode :
Enhancement
Subcategory :
MOSFETs
Pbfree Code :
yes
Product Category :
MOSFET
Mounting Style :
Through Hole
Avalanche Energy Rating (Eas) :
2000 mJ
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Height :
21.46 mm
JESD-609 Code :
e1
Number of Elements :
1
Base Product Number :
IXFH100
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Datasheets
IXFH100N25P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH100N25P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, Type:PolarHT HiPerFET Power MOSFET, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFH100N25P pinout, IXFH100N25P datasheet PDF, IXFH100N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH100N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH100N25P


N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3

IXFH100N25P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH100N25P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)


IXFH100N25P Applications


There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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