IXFH100N25P
- Mfr.Part #
- IXFH100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO247AD
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Reach Compliance Code :
- Compliant
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 250A
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Drain to Source Voltage (Vdss) :
- 250V
- Transistor Element Material :
- SILICON
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 600W Tc
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- Product Category :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 21.46 mm
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 100 ns
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Supplier Device Package :
- TO-247AD
- Published :
- 2006
- Length :
- 16.26 mm
- JEDEC-95 Code :
- TO-247AD
- Drain-source On Resistance-Max :
- 0.027Ohm
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Width :
- 5.3 mm
- Subcategory :
- MOSFETs
- Continuous Drain Current (ID) :
- 100A
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 250 V
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXFH100
- Tradename :
- HiPerFET
- Manufacturer :
- IXYS
- Type :
- PolarHT HiPerFET Power MOSFET
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 600W (Tc)
- FET Feature :
- -
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Drain to Source Breakdown Voltage :
- 250V
- Power Dissipation :
- 600W
- Rise Time :
- 26ns
- RoHS :
- Details
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Type :
- 1 N-Channel
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Number of Terminals :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 50A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Series :
- PolarHT™ HiPerFET™
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Factory Lead Time :
- 30 Weeks
- Fall Time (Typ) :
- 28 ns
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Datasheets
- IXFH100N25P
IXFH100N25P Documents

N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3
IXFH100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXFH100N25P Applications
There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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