IXFH100N25P
- Mfr.Part #
- IXFH100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO247AD
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 600W Tc
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 600W
- Package / Case :
- TO-247-3
- Additional Feature :
- AVALANCHE RATED
- Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 250 V
- Height :
- 21.46 mm
- Surface Mount :
- No
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Mounting Style :
- Through Hole
- Supplier Device Package :
- TO-247AD
- Packaging :
- Tube
- Pin Count :
- 3
- Rise Time :
- 26ns
- Type :
- PolarHT HiPerFET Power MOSFET
- Brand :
- IXYS
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-247AD
- RoHS Status :
- ROHS3 Compliant
- RoHS :
- Details
- Fall Time (Typ) :
- 28 ns
- Drain to Source Voltage (Vdss) :
- 250V
- Transistor Type :
- 1 N-Channel
- Published :
- 2006
- Mount :
- Through Hole
- Length :
- 16.26 mm
- Transistor Polarity :
- N-Channel
- Tradename :
- HiPerFET
- FET Feature :
- -
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e1
- Package Shape :
- RECTANGULAR
- Subcategory :
- MOSFETs
- Continuous Drain Current (ID) :
- 100A
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Factory Lead Time :
- 30 Weeks
- Drain to Source Breakdown Voltage :
- 250V
- ECCN Code :
- EAR99
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSFM-T3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Product Type :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Element Configuration :
- Single
- Series :
- PolarHT™ HiPerFET™
- Pulsed Drain Current-Max (IDM) :
- 250A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn-Off Delay Time :
- 100 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.027Ohm
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 50A, 10V
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Width :
- 5.3 mm
- Number of Terminals :
- 3
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Manufacturer :
- IXYS
- Terminal Position :
- Single
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXFH100
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 600W (Tc)
- Channel Mode :
- Enhancement
- Package :
- Tube
- Datasheets
- IXFH100N25P

N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3
IXFH100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXFH100N25P Applications
There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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