IXFH100N25P
- Mfr.Part #
- IXFH100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO247AD
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Configuration :
- Single
- JEDEC-95 Code :
- TO-247AD
- Rise Time :
- 26ns
- Qualification Status :
- Not Qualified
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 250V
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Type :
- PolarHT HiPerFET Power MOSFET
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Subcategory :
- MOSFETs
- Manufacturer :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 30 Weeks
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 600W
- Power Dissipation-Max :
- 600W Tc
- Height :
- 21.46 mm
- Package / Case :
- TO-247-3
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 250V
- RoHS :
- Details
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Transistor Type :
- 1 N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Mounting Style :
- Through Hole
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 100 ns
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 250A
- Case Connection :
- DRAIN
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 250 V
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- FET Feature :
- -
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Series :
- PolarHT™ HiPerFET™
- Surface Mount :
- No
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Maximum Operating Temperature :
- + 150 C
- Channel Mode :
- Enhancement
- Base Product Number :
- IXFH100
- Fall Time (Typ) :
- 28 ns
- Package :
- Tube
- Mount :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Product Status :
- Active
- Continuous Drain Current (ID) :
- 100A
- ECCN Code :
- EAR99
- Tradename :
- HiPerFET
- Width :
- 5.3 mm
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.027Ohm
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 50A, 10V
- Power Dissipation (Max) :
- 600W (Tc)
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-247AD
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Length :
- 16.26 mm
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e1
- Datasheets
- IXFH100N25P
IXFH100N25P Documents

N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3
IXFH100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXFH100N25P Applications
There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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