IXFH100N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Element Configuration :

Single

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 25V

Height :

21.46 mm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

600W

Width :

5.3 mm

Subcategory :

MOSFETs

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-247-3

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR

FET Feature :

-

Drain to Source Voltage (Vdss) :

250V

Vgs(th) (Max) @ Id :

5V @ 4mA

Power Dissipation (Max) :

600W (Tc)

Published :

2006

Mounting Style :

Through Hole

Tradename :

HiPerFET

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Rise Time :

26ns

Continuous Drain Current (ID) :

100A

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Position :

Single

Transistor Polarity :

N-Channel

Supplier Device Package :

TO-247AD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Qualification Status :

Not Qualified

Fall Time (Typ) :

28 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

2000 mJ

Base Product Number :

IXFH100

Transistor Type :

1 N-Channel

Drain to Source Breakdown Voltage :

250V

Channel Mode :

Enhancement

Brand :

IXYS

ECCN Code :

EAR99

Series :

PolarHT™ HiPerFET™

Number of Channels :

1 Channel

Power Dissipation-Max :

600W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

30 Weeks

Vgs (Max) :

±20V

Packaging :

Tube

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Type :

PolarHT HiPerFET Power MOSFET

Configuration :

Single

DS Breakdown Voltage-Min :

250 V

Rds On (Max) @ Id, Vgs :

27m Ω @ 50A, 10V

JEDEC-95 Code :

TO-247AD

Pulsed Drain Current-Max (IDM) :

250A

RoHS :

Details

Package :

Tube

Transistor Element Material :

SILICON

Number of Elements :

1

Product Category :

MOSFET

Drain-source On Resistance-Max :

0.027Ohm

Length :

16.26 mm

Gate to Source Voltage (Vgs) :

20V

Number of Terminals :

3

Reach Compliance Code :

Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Manufacturer :

IXYS

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

JESD-609 Code :

e1

Turn-Off Delay Time :

100 ns

Number of Terminations :

3

Mount :

Through Hole

Pin Count :

3