IXFH100N25P

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Mfr.Part #
IXFH100N25P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 100A TO247AD
Stock
10
In Stock :
10

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Surface Mount :
No
JESD-609 Code :
e1
Published :
2006
Mounting Type :
Through Hole
Product Category :
MOSFET
Subcategory :
MOSFETs
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
IXYS
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
250 V
Fall Time (Typ) :
28 ns
Operating Temperature :
-55°C~150°C TJ
Minimum Operating Temperature :
- 55 C
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
250A
Packaging :
Tube
FET Feature :
-
Polarity/Channel Type :
N-Channel
Width :
5.3 mm
Length :
16.26 mm
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Brand :
IXYS
Terminal Form :
THROUGH-HOLE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
2000 mJ
Turn-Off Delay Time :
100 ns
Transistor Polarity :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
600W
Drain-source On Resistance-Max :
0.027Ohm
Pin Count :
3
Drain to Source Breakdown Voltage :
250V
Drain to Source Voltage (Vdss) :
250V
Number of Terminals :
3
Continuous Drain Current (ID) :
100A
Element Configuration :
Single
Package :
Tube
JESD-30 Code :
R-PSFM-T3
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Vgs(th) (Max) @ Id :
5V @ 4mA
Mounting Style :
Through Hole
Number of Elements :
1
Power Dissipation-Max :
600W Tc
Rise Time :
26ns
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
185nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Channel Mode :
Enhancement
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Height :
21.46 mm
RoHS :
Details
Rds On (Max) @ Id, Vgs :
27m Ω @ 50A, 10V
Configuration :
Single
Factory Lead Time :
30 Weeks
Product Type :
MOSFET
Package / Case :
TO-247-3
Number of Terminations :
3
Base Product Number :
IXFH100
Transistor Type :
1 N-Channel
Case Connection :
DRAIN
Series :
PolarHT™ HiPerFET™
Tradename :
HiPerFET
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
Type :
PolarHT HiPerFET Power MOSFET
Supplier Device Package :
TO-247AD
Mount :
Through Hole
Power Dissipation (Max) :
600W (Tc)
JEDEC-95 Code :
TO-247AD
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH100N25P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Type:PolarHT HiPerFET Power MOSFET, IXFH100N25P pinout, IXFH100N25P datasheet PDF, IXFH100N25P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH100N25P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH100N25P


N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3

IXFH100N25P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH100N25P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)


IXFH100N25P Applications


There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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