IXFH100N25P
- Mfr.Part #
- IXFH100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO247AD
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 250V
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 250 V
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 50A, 10V
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 600W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Tradename :
- HiPerFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Style :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- FET Type :
- N-Channel
- Type :
- PolarHT HiPerFET Power MOSFET
- Pin Count :
- 3
- Width :
- 5.3 mm
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-247AD
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 26ns
- Transistor Polarity :
- N-Channel
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Turn-Off Delay Time :
- 100 ns
- Terminal Form :
- THROUGH-HOLE
- Manufacturer :
- IXYS
- Series :
- PolarHT™ HiPerFET™
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminals :
- 3
- Power Dissipation :
- 600W
- Reach Compliance Code :
- Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Terminal Position :
- Single
- Transistor Type :
- 1 N-Channel
- Height :
- 21.46 mm
- RoHS :
- Details
- Channel Mode :
- Enhancement
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 100A
- Maximum Operating Temperature :
- + 150 C
- Base Product Number :
- IXFH100
- Vgs (Max) :
- ±20V
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 28 ns
- Product Category :
- MOSFET
- Drain to Source Breakdown Voltage :
- 250V
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2006
- Package :
- Tube
- Product Status :
- Active
- JEDEC-95 Code :
- TO-247AD
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 30 Weeks
- Package / Case :
- TO-247-3
- Product Type :
- MOSFET
- Length :
- 16.26 mm
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.027Ohm
- FET Feature :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Pulsed Drain Current-Max (IDM) :
- 250A
- Power Dissipation (Max) :
- 600W (Tc)
- Subcategory :
- MOSFETs
- Datasheets
- IXFH100N25P
IXFH100N25P Documents

N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3
IXFH100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXFH100N25P Applications
There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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