IXFH100N25P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Number of Elements :

1

Configuration :

Single

JEDEC-95 Code :

TO-247AD

Rise Time :

26ns

Qualification Status :

Not Qualified

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

250V

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Type :

PolarHT HiPerFET Power MOSFET

Reach Compliance Code :

Compliant

Packaging :

Tube

Subcategory :

MOSFETs

Manufacturer :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

30 Weeks

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

600W

Power Dissipation-Max :

600W Tc

Height :

21.46 mm

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

250V

RoHS :

Details

Mounting Type :

Through Hole

Brand :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSFM-T3

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

Turn-Off Delay Time :

100 ns

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

250A

Case Connection :

DRAIN

Product Type :

MOSFET

DS Breakdown Voltage-Min :

250 V

Pbfree Code :

yes

Number of Terminations :

3

FET Feature :

-

Avalanche Energy Rating (Eas) :

2000 mJ

Series :

PolarHT™ HiPerFET™

Surface Mount :

No

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Maximum Operating Temperature :

+ 150 C

Channel Mode :

Enhancement

Base Product Number :

IXFH100

Fall Time (Typ) :

28 ns

Package :

Tube

Mount :

Through Hole

Terminal Form :

THROUGH-HOLE

Element Configuration :

Single

Product Status :

Active

Continuous Drain Current (ID) :

100A

ECCN Code :

EAR99

Tradename :

HiPerFET

Width :

5.3 mm

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.027Ohm

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

27m Ω @ 50A, 10V

Power Dissipation (Max) :

600W (Tc)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-247AD

Terminal Position :

Single

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Length :

16.26 mm

Vgs(th) (Max) @ Id :

5V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds :

6300pF @ 25V

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e1