IXFH100N25P
- Mfr.Part #
- IXFH100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO247AD
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation :
- 600W
- Rise Time :
- 26ns
- Power Dissipation (Max) :
- 600W (Tc)
- Drain to Source Voltage (Vdss) :
- 250V
- RoHS :
- Details
- Transistor Type :
- 1 N-Channel
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- Turn-Off Delay Time :
- 100 ns
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-247AD
- Type :
- PolarHT HiPerFET Power MOSFET
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Height :
- 21.46 mm
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1 Channel
- Tradename :
- HiPerFET
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 50A, 10V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.027Ohm
- Product Category :
- MOSFET
- Transistor Element Material :
- SILICON
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 30 Weeks
- Package Shape :
- RECTANGULAR
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 250 V
- Power Dissipation-Max :
- 600W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Number of Elements :
- 1
- FET Feature :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- TO-247-3
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Maximum Operating Temperature :
- + 150 C
- Pulsed Drain Current-Max (IDM) :
- 250A
- Fall Time (Typ) :
- 28 ns
- Vgs (Max) :
- ±20V
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2006
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Product Status :
- Active
- Subcategory :
- MOSFETs
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Series :
- PolarHT™ HiPerFET™
- Product Type :
- MOSFET
- Manufacturer :
- IXYS
- Length :
- 16.26 mm
- Brand :
- IXYS
- Number of Terminations :
- 3
- Base Product Number :
- IXFH100
- Continuous Drain Current (ID) :
- 100A
- Drain to Source Breakdown Voltage :
- 250V
- Width :
- 5.3 mm
- Number of Terminals :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- JESD-609 Code :
- e1
- Supplier Device Package :
- TO-247AD
- Datasheets
- IXFH100N25P
IXFH100N25P Documents

N-Channel Tube 27m Ω @ 50A, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-247-3
IXFH100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXFH100N25P Applications
There are a lot of IXYS
IXFH100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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