IXFH120N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

6 nF

REACH SVHC :

No SVHC

Type :

PolarHT HiPerFET Power MOSFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Base Product Number :

IXFH120

Drain Current-Max (Abs) (ID) :

120 A

Product Type :

MOSFET

Packaging :

Tube

Power Dissipation :

714W

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Width :

5.3mm

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

DS Breakdown Voltage-Min :

200 V

Number of Pins :

3

Number of Terminals :

3

Transistor Type :

1 N-Channel

Max Power Dissipation :

714 W

MSL :

-

Power Dissipation-Max (Abs) :

714 W

Number of Elements :

1

Package Shape :

RECTANGULAR

Pin Count :

3

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

100 ns

Series :

HiPerFET™, PolarP2™

Tradename :

HiPerFET

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

JEDEC-95 Code :

TO-247AD

Turn-On Delay Time :

30 ns

Number of Channels :

1 Channel

Package :

Tube

Supplier Device Package :

TO-247AD (IXFH)

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pbfree Code :

yes

Height :

21.46mm

Max Operating Temperature :

175 °C

Channel Mode :

Enhancement

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

714W Tc

Manufacturer :

IXYS

Fall Time (Typ) :

31 ns

JESD-609 Code :

e1

Maximum Operating Temperature :

+175 °C

Number of Elements per Chip :

1

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Configuration :

Single

Resistance :

22mOhm

Operating Temperature :

-55°C~175°C TJ

Brand :

IXYS

Rds On Max :

22 mΩ

Min Operating Temperature :

-55 °C

Product Status :

Active

Mounting Style :

Through Hole

Drain to Source Breakdown Voltage :

200V

Terminal Form :

THROUGH-HOLE

Avalanche Energy Rating (Eas) :

2000 mJ

Qualification :

-

Drain to Source Resistance :

22 mΩ

Continuous Drain Current (ID) :

120A

Continuous Drain Current Id :

120A

Terminal Position :

Single

Turn On Delay Time :

30 ns

Drain-source On Resistance-Max :

0.022 Ω

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

300 A

Vgs(th) (Max) @ Id :

5V @ 4mA

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Terminations :

3

Rise Time :

35ns

Mounting Type :

Through Hole

FET Feature :

--

Transistor Application :

SWITCHING

Power Dissipation (Max) :

714W (Tc)

Product Category :

MOSFET

Package Type :

TO-247

Channel Type :

N

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

Factory Lead Time :

30 Weeks

Minimum Operating Temperature :

-55 °C

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Length :

16.26mm

RoHS :

Details

Threshold Voltage :

5V

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V