IXFH120N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Type :

TO-247

Turn-Off Delay Time :

100 ns

Terminal Position :

Single

Drain to Source Breakdown Voltage :

200V

Power Dissipation :

714W

Additional Feature :

AVALANCHE RATED

Mounting Style :

Through Hole

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

ECCN Code :

EAR99

Package Shape :

RECTANGULAR

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

120A

Operating Temperature :

-55°C~175°C TJ

Product Type :

MOSFET

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Reach Compliance Code :

Compliant

Brand :

IXYS

Vgs(th) (Max) @ Id :

5V @ 4mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

DS Breakdown Voltage-Min :

200 V

Number of Terminations :

3

Max Power Dissipation :

714 W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Continuous Drain Current Id :

120A

REACH SVHC :

No SVHC

Resistance :

22mOhm

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55 °C

Number of Pins :

3

Qualification Status :

Not Qualified

Number of Terminals :

3

Number of Elements per Chip :

1

JESD-30 Code :

R-PSFM-T3

Qualification :

-

Mount :

Through Hole

Length :

16.26mm

Base Product Number :

IXFH120

Power Dissipation-Max (Abs) :

714 W

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

MSL :

-

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

5V

Package / Case :

TO-247-3

Power Dissipation (Max) :

714W (Tc)

Drain to Source Resistance :

22 mΩ

Configuration :

Single

Power Dissipation-Max :

714W Tc

Operating Mode :

ENHANCEMENT MODE

Channel Type :

N

Height :

21.46mm

Turn On Delay Time :

30 ns

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

31 ns

Transistor Type :

1 N-Channel

Rise Time :

35ns

Supplier Device Package :

TO-247AD (IXFH)

FET Type :

N-Channel

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

120 A

Package :

Tube

Published :

2006

Drain to Source Voltage (Vdss) :

200V

JESD-609 Code :

e1

Drain-source On Resistance-Max :

0.022 Ω

Max Operating Temperature :

175 °C

Number of Elements :

1

Element Configuration :

Single

Product Status :

Active

Pin Count :

3

Rds On Max :

22 mΩ

Minimum Operating Temperature :

-55 °C

Tradename :

HiPerFET

Pbfree Code :

yes

JEDEC-95 Code :

TO-247AD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+175 °C

Avalanche Energy Rating (Eas) :

2000 mJ

Type :

PolarHT HiPerFET Power MOSFET

Factory Lead Time :

30 Weeks

Width :

5.3mm

Surface Mount :

No

Series :

HiPerFET™, PolarP2™

Input Capacitance :

6 nF

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Pulsed Drain Current-Max (IDM) :

300 A

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Category :

MOSFET

Turn-On Delay Time :

30 ns