IXFH120N20P

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Mfr.Part #
IXFH120N20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 120A TO247AD
Stock
1,609
In Stock :
1,609

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance :
6 nF
REACH SVHC :
No SVHC
Type :
PolarHT HiPerFET Power MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Additional Feature :
AVALANCHE RATED
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Base Product Number :
IXFH120
Drain Current-Max (Abs) (ID) :
120 A
Product Type :
MOSFET
Packaging :
Tube
Power Dissipation :
714W
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Width :
5.3mm
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
DS Breakdown Voltage-Min :
200 V
Number of Pins :
3
Number of Terminals :
3
Transistor Type :
1 N-Channel
Max Power Dissipation :
714 W
MSL :
-
Power Dissipation-Max (Abs) :
714 W
Number of Elements :
1
Package Shape :
RECTANGULAR
Pin Count :
3
Mount :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
100 ns
Series :
HiPerFET™, PolarP2™
Tradename :
HiPerFET
Vgs (Max) :
±20V
Transistor Polarity :
N-Channel
JEDEC-95 Code :
TO-247AD
Turn-On Delay Time :
30 ns
Number of Channels :
1 Channel
Package :
Tube
Supplier Device Package :
TO-247AD (IXFH)
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Height :
21.46mm
Max Operating Temperature :
175 °C
Channel Mode :
Enhancement
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
714W Tc
Manufacturer :
IXYS
Fall Time (Typ) :
31 ns
JESD-609 Code :
e1
Maximum Operating Temperature :
+175 °C
Number of Elements per Chip :
1
Element Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Configuration :
Single
Resistance :
22mOhm
Operating Temperature :
-55°C~175°C TJ
Brand :
IXYS
Rds On Max :
22 mΩ
Min Operating Temperature :
-55 °C
Product Status :
Active
Mounting Style :
Through Hole
Drain to Source Breakdown Voltage :
200V
Terminal Form :
THROUGH-HOLE
Avalanche Energy Rating (Eas) :
2000 mJ
Qualification :
-
Drain to Source Resistance :
22 mΩ
Continuous Drain Current (ID) :
120A
Continuous Drain Current Id :
120A
Terminal Position :
Single
Turn On Delay Time :
30 ns
Drain-source On Resistance-Max :
0.022 Ω
Package / Case :
TO-247-3
Pulsed Drain Current-Max (IDM) :
300 A
Vgs(th) (Max) @ Id :
5V @ 4mA
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Number of Terminations :
3
Rise Time :
35ns
Mounting Type :
Through Hole
FET Feature :
--
Transistor Application :
SWITCHING
Power Dissipation (Max) :
714W (Tc)
Product Category :
MOSFET
Package Type :
TO-247
Channel Type :
N
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
200V
Factory Lead Time :
30 Weeks
Minimum Operating Temperature :
-55 °C
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Length :
16.26mm
RoHS :
Details
Threshold Voltage :
5V
Published :
2006
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Datasheets
IXFH120N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT HiPerFET Power MOSFET, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, IXFH120N20P pinout, IXFH120N20P datasheet PDF, IXFH120N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH120N20P


N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-247-3

IXFH120N20P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 120 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 22 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH120N20P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
single MOSFETs transistor is 22 mΩ
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)


IXFH120N20P Applications


There are a lot of IXYS
IXFH120N20P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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