IXFH120N20P

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Mfr.Part #
IXFH120N20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 120A TO247AD
Stock
1,609
In Stock :
1,609

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
REACH SVHC :
No SVHC
Power Dissipation-Max :
714W Tc
Length :
16.26mm
Threshold Voltage :
5V
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
Product Status :
Active
RoHS :
Details
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Mounting Style :
Through Hole
Min Operating Temperature :
-55 °C
Drain to Source Breakdown Voltage :
200V
Transistor Element Material :
SILICON
Product Category :
MOSFET
ECCN Code :
EAR99
Rise Time :
35ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Fall Time (Typ) :
31 ns
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
714W (Tc)
Mount :
Through Hole
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
714 W
MSL :
-
Channel Type :
N
Transistor Application :
SWITCHING
Drain Current-Max (Abs) (ID) :
120 A
Drain to Source Resistance :
22 mΩ
Package :
Tube
Turn-On Delay Time :
30 ns
Published :
2006
Qualification :
-
RoHS Status :
ROHS3 Compliant
Type :
PolarHT HiPerFET Power MOSFET
Number of Elements :
1
Height :
21.46mm
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
Resistance :
22mOhm
Width :
5.3mm
DS Breakdown Voltage-Min :
200 V
Series :
HiPerFET™, PolarP2™
Tradename :
HiPerFET
Rds On Max :
22 mΩ
Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Product Type :
MOSFET
FET Feature :
--
Continuous Drain Current Id :
120A
Avalanche Energy Rating (Eas) :
2000 mJ
Power Dissipation :
714W
Brand :
IXYS
Terminal Position :
Single
Vgs(th) (Max) @ Id :
5V @ 4mA
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
Number of Elements per Chip :
1
FET Type :
N-Channel
Packaging :
Tube
Number of Terminations :
3
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
200V
JESD-609 Code :
e1
Input Capacitance :
6 nF
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Minimum Operating Temperature :
-55 °C
Qualification Status :
Not Qualified
Number of Terminals :
3
Continuous Drain Current (ID) :
120A
Factory Lead Time :
30 Weeks
Channel Mode :
Enhancement
Maximum Operating Temperature :
+175 °C
Package / Case :
TO-247-3
Package Type :
TO-247
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Pulsed Drain Current-Max (IDM) :
300 A
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Supplier Device Package :
TO-247AD (IXFH)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lead Free :
Lead Free
Max Operating Temperature :
175 °C
Base Product Number :
IXFH120
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
Additional Feature :
AVALANCHE RATED
Turn-Off Delay Time :
100 ns
Turn On Delay Time :
30 ns
JEDEC-95 Code :
TO-247AD
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
714 W
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain-source On Resistance-Max :
0.022 Ω
Transistor Type :
1 N-Channel
Number of Pins :
3
Pbfree Code :
yes
Number of Channels :
1 Channel
Datasheets
IXFH120N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Type:PolarHT HiPerFET Power MOSFET, Number of Terminations:3, Package / Case:TO-247-3, Number of Pins:3, Number of Channels:1 Channel, IXFH120N20P pinout, IXFH120N20P datasheet PDF, IXFH120N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH120N20P


N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-247-3

IXFH120N20P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 120 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 22 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH120N20P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
single MOSFETs transistor is 22 mΩ
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)


IXFH120N20P Applications


There are a lot of IXYS
IXFH120N20P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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