IXFH120N20P

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Mfr.Part #
IXFH120N20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 120A TO247AD
Stock
1,609
In Stock :
1,609

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
100 ns
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
120A
Tradename :
HiPerFET
Max Operating Temperature :
175 °C
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Active
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
30 Weeks
Resistance :
22mOhm
Current - Continuous Drain (Id) @ 25°C :
120A Tc
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Published :
2006
Length :
16.26mm
Brand :
IXYS
JESD-609 Code :
e1
Operating Mode :
ENHANCEMENT MODE
Height :
21.46mm
Turn On Delay Time :
30 ns
Number of Pins :
3
Drain to Source Resistance :
22 mΩ
Base Product Number :
IXFH120
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-247AD (IXFH)
Pin Count :
3
Type :
PolarHT HiPerFET Power MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Series :
HiPerFET™, PolarP2™
Avalanche Energy Rating (Eas) :
2000 mJ
FET Type :
N-Channel
Element Configuration :
Single
DS Breakdown Voltage-Min :
200 V
Mount :
Through Hole
Rds On Max :
22 mΩ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-247AD
Min Operating Temperature :
-55 °C
Package Type :
TO-247
Product Category :
MOSFET
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
5V @ 4mA
Number of Terminals :
3
Terminal Form :
THROUGH-HOLE
Power Dissipation (Max) :
714W (Tc)
Package / Case :
TO-247-3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Channels :
1 Channel
Width :
5.3mm
Minimum Operating Temperature :
-55 °C
Package :
Tube
Mounting Style :
Through Hole
Input Capacitance :
6 nF
Number of Elements :
1
Configuration :
Single
Channel Mode :
Enhancement
Lead Free :
Lead Free
Continuous Drain Current Id :
120A
Drain to Source Breakdown Voltage :
200V
Pulsed Drain Current-Max (IDM) :
300 A
Max Power Dissipation :
714 W
Reach Compliance Code :
Compliant
Qualification :
-
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Power Dissipation-Max :
714W Tc
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
120 A
Channel Type :
N
Packaging :
Tube
Drain to Source Voltage (Vdss) :
200V
Power Dissipation :
714W
Terminal Position :
Single
Transistor Polarity :
N-Channel
Product Type :
MOSFET
Vgs (Max) :
±20V
MSL :
-
Turn-On Delay Time :
30 ns
Number of Terminations :
3
Fall Time (Typ) :
31 ns
Drain-source On Resistance-Max :
0.022 Ω
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Threshold Voltage :
5V
RoHS :
Details
Rise Time :
35ns
Operating Temperature :
-55°C~175°C TJ
FET Feature :
--
Number of Elements per Chip :
1
Power Dissipation-Max (Abs) :
714 W
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
Transistor Type :
1 N-Channel
Maximum Operating Temperature :
+175 °C
Gate to Source Voltage (Vgs) :
20V
Surface Mount :
No
Datasheets
IXFH120N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Type:PolarHT HiPerFET Power MOSFET, Package / Case:TO-247-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, IXFH120N20P pinout, IXFH120N20P datasheet PDF, IXFH120N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH120N20P


N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-247-3

IXFH120N20P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 120 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 22 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH120N20P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
single MOSFETs transistor is 22 mΩ
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)


IXFH120N20P Applications


There are a lot of IXYS
IXFH120N20P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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