IXFH120N20P
- Mfr.Part #
- IXFH120N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A TO247AD
- Stock
- 1,609
- In Stock :
- 1,609
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 714W Tc
- Length :
- 16.26mm
- Threshold Voltage :
- 5V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Product Status :
- Active
- RoHS :
- Details
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Mounting Style :
- Through Hole
- Min Operating Temperature :
- -55 °C
- Drain to Source Breakdown Voltage :
- 200V
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- ECCN Code :
- EAR99
- Rise Time :
- 35ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 31 ns
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 714W (Tc)
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Max Power Dissipation :
- 714 W
- MSL :
- -
- Channel Type :
- N
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 120 A
- Drain to Source Resistance :
- 22 mΩ
- Package :
- Tube
- Turn-On Delay Time :
- 30 ns
- Published :
- 2006
- Qualification :
- -
- RoHS Status :
- ROHS3 Compliant
- Type :
- PolarHT HiPerFET Power MOSFET
- Number of Elements :
- 1
- Height :
- 21.46mm
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 500mA, 10V
- Resistance :
- 22mOhm
- Width :
- 5.3mm
- DS Breakdown Voltage-Min :
- 200 V
- Series :
- HiPerFET™, PolarP2™
- Tradename :
- HiPerFET
- Rds On Max :
- 22 mΩ
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Product Type :
- MOSFET
- FET Feature :
- --
- Continuous Drain Current Id :
- 120A
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Power Dissipation :
- 714W
- Brand :
- IXYS
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Reach Compliance Code :
- Compliant
- Terminal Form :
- THROUGH-HOLE
- Number of Elements per Chip :
- 1
- FET Type :
- N-Channel
- Packaging :
- Tube
- Number of Terminations :
- 3
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 200V
- JESD-609 Code :
- e1
- Input Capacitance :
- 6 nF
- Manufacturer :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Minimum Operating Temperature :
- -55 °C
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Continuous Drain Current (ID) :
- 120A
- Factory Lead Time :
- 30 Weeks
- Channel Mode :
- Enhancement
- Maximum Operating Temperature :
- +175 °C
- Package / Case :
- TO-247-3
- Package Type :
- TO-247
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Supplier Device Package :
- TO-247AD (IXFH)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 175 °C
- Base Product Number :
- IXFH120
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- Turn-Off Delay Time :
- 100 ns
- Turn On Delay Time :
- 30 ns
- JEDEC-95 Code :
- TO-247AD
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 714 W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain-source On Resistance-Max :
- 0.022 Ω
- Transistor Type :
- 1 N-Channel
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- Datasheets
- IXFH120N20P

N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-247-3
IXFH120N20P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 120 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 22 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFH120N20P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
single MOSFETs transistor is 22 mΩ
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IXFH120N20P Applications
There are a lot of IXYS
IXFH120N20P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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