IXFH120N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

100 ns

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

120A

Tradename :

HiPerFET

Max Operating Temperature :

175 °C

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

30 Weeks

Resistance :

22mOhm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Published :

2006

Length :

16.26mm

Brand :

IXYS

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Height :

21.46mm

Turn On Delay Time :

30 ns

Number of Pins :

3

Drain to Source Resistance :

22 mΩ

Base Product Number :

IXFH120

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-247AD (IXFH)

Pin Count :

3

Type :

PolarHT HiPerFET Power MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Series :

HiPerFET™, PolarP2™

Avalanche Energy Rating (Eas) :

2000 mJ

FET Type :

N-Channel

Element Configuration :

Single

DS Breakdown Voltage-Min :

200 V

Mount :

Through Hole

Rds On Max :

22 mΩ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-247AD

Min Operating Temperature :

-55 °C

Package Type :

TO-247

Product Category :

MOSFET

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 4mA

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

714W (Tc)

Package / Case :

TO-247-3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Channels :

1 Channel

Width :

5.3mm

Minimum Operating Temperature :

-55 °C

Package :

Tube

Mounting Style :

Through Hole

Input Capacitance :

6 nF

Number of Elements :

1

Configuration :

Single

Channel Mode :

Enhancement

Lead Free :

Lead Free

Continuous Drain Current Id :

120A

Drain to Source Breakdown Voltage :

200V

Pulsed Drain Current-Max (IDM) :

300 A

Max Power Dissipation :

714 W

Reach Compliance Code :

Compliant

Qualification :

-

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Power Dissipation-Max :

714W Tc

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

120 A

Channel Type :

N

Packaging :

Tube

Drain to Source Voltage (Vdss) :

200V

Power Dissipation :

714W

Terminal Position :

Single

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Vgs (Max) :

±20V

MSL :

-

Turn-On Delay Time :

30 ns

Number of Terminations :

3

Fall Time (Typ) :

31 ns

Drain-source On Resistance-Max :

0.022 Ω

Package Shape :

RECTANGULAR

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

5V

RoHS :

Details

Rise Time :

35ns

Operating Temperature :

-55°C~175°C TJ

FET Feature :

--

Number of Elements per Chip :

1

Power Dissipation-Max (Abs) :

714 W

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+175 °C

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

No