IXFH120N20P

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Mfr.Part #
IXFH120N20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 120A TO247AD
Stock
1,609
In Stock :
1,609

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFH120
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
200V
Polarity/Channel Type :
N-Channel
Configuration :
Single
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
5V
Brand :
IXYS
Drain-source On Resistance-Max :
0.022 Ω
Turn-On Delay Time :
30 ns
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
200V
Case Connection :
DRAIN
Number of Channels :
1 Channel
Element Configuration :
Single
Mounting Type :
Through Hole
Pulsed Drain Current-Max (IDM) :
300 A
Avalanche Energy Rating (Eas) :
2000 mJ
Max Power Dissipation :
714 W
Terminal Form :
THROUGH-HOLE
Number of Elements per Chip :
1
Turn-Off Delay Time :
100 ns
Pbfree Code :
yes
Tradename :
HiPerFET
Supplier Device Package :
TO-247AD (IXFH)
Transistor Type :
1 N-Channel
REACH SVHC :
No SVHC
Lead Free :
Lead Free
Qualification :
-
JESD-30 Code :
R-PSFM-T3
Turn On Delay Time :
30 ns
Input Capacitance :
6 nF
Package Type :
TO-247
Series :
HiPerFET™, PolarP2™
Package Shape :
RECTANGULAR
Mount :
Through Hole
Maximum Operating Temperature :
+175 °C
Surface Mount :
No
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Height :
21.46mm
Continuous Drain Current (ID) :
120A
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Max Operating Temperature :
175 °C
Reach Compliance Code :
Compliant
JEDEC-95 Code :
TO-247AD
Rds On Max :
22 mΩ
JESD-609 Code :
e1
DS Breakdown Voltage-Min :
200 V
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current Id :
120A
Mounting Style :
Through Hole
Product Category :
MOSFET
Published :
2006
Pin Count :
3
FET Type :
N-Channel
Transistor Element Material :
SILICON
Number of Terminations :
3
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Rise Time :
35ns
Minimum Operating Temperature :
-55 °C
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Vgs (Max) :
±20V
Power Dissipation (Max) :
714W (Tc)
Terminal Position :
Single
Manufacturer :
IXYS
Channel Mode :
Enhancement
ECCN Code :
EAR99
Factory Lead Time :
30 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-247-3
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
Number of Pins :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
MSL :
-
Package :
Tube
Drain to Source Resistance :
22 mΩ
Min Operating Temperature :
-55 °C
Fall Time (Typ) :
31 ns
Channel Type :
N
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
714W
Packaging :
Tube
Type :
PolarHT HiPerFET Power MOSFET
Length :
16.26mm
Drain Current-Max (Abs) (ID) :
120 A
Resistance :
22mOhm
RoHS :
Details
Width :
5.3mm
Power Dissipation-Max :
714W Tc
Vgs(th) (Max) @ Id :
5V @ 4mA
Number of Elements :
1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation-Max (Abs) :
714 W
FET Feature :
--
Product Type :
MOSFET
Datasheets
IXFH120N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Package / Case:TO-247-3, Number of Pins:3, Type:PolarHT HiPerFET Power MOSFET, IXFH120N20P pinout, IXFH120N20P datasheet PDF, IXFH120N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH120N20P


N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-247-3

IXFH120N20P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 120 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 22 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH120N20P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
single MOSFETs transistor is 22 mΩ
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)


IXFH120N20P Applications


There are a lot of IXYS
IXFH120N20P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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