IXFH120N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Turn On Delay Time :

30 ns

Product Status :

Active

Type :

PolarHT HiPerFET Power MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

TO-247AD (IXFH)

Factory Lead Time :

30 Weeks

Channel Mode :

Enhancement

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

714 W

Package Shape :

RECTANGULAR

Input Capacitance :

6 nF

Turn-On Delay Time :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Continuous Drain Current (ID) :

120A

Drain to Source Resistance :

22 mΩ

Terminal Position :

Single

FET Type :

N-Channel

Brand :

IXYS

Drain-source On Resistance-Max :

0.022 Ω

Threshold Voltage :

5V

Published :

2006

Qualification Status :

Not Qualified

Base Product Number :

IXFH120

MSL :

-

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Length :

16.26mm

Vgs (Max) :

±20V

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current Id :

120A

RoHS Status :

ROHS3 Compliant

Transistor Type :

1 N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Min Operating Temperature :

-55 °C

Package Type :

TO-247

Lead Free :

Lead Free

Element Configuration :

Single

Number of Channels :

1 Channel

Qualification :

-

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS

JESD-609 Code :

e1

Rds On Max :

22 mΩ

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

714W

Resistance :

22mOhm

REACH SVHC :

No SVHC

RoHS :

Details

Series :

HiPerFET™, PolarP2™

Max Operating Temperature :

175 °C

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

300 A

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

200 V

Turn-Off Delay Time :

100 ns

Power Dissipation-Max :

714W Tc

Transistor Polarity :

N-Channel

Fall Time (Typ) :

31 ns

Width :

5.3mm

Power Dissipation (Max) :

714W (Tc)

Number of Terminals :

3

Mounting Style :

Through Hole

Number of Elements :

1

Transistor Element Material :

SILICON

Channel Type :

N

Packaging :

Tube

Configuration :

Single

Product Type :

MOSFET

Rise Time :

35ns

Number of Elements per Chip :

1

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain Current-Max (Abs) (ID) :

120 A

JEDEC-95 Code :

TO-247AD

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

2000 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HiPerFET

FET Feature :

--

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Pbfree Code :

yes

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

5V @ 4mA

Minimum Operating Temperature :

-55 °C

Max Power Dissipation :

714 W

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

200V

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+175 °C

Package / Case :

TO-247-3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Height :

21.46mm

Drain to Source Breakdown Voltage :

200V

Pin Count :

3

Mounting Type :

Through Hole

Surface Mount :

No