IXFH120N20P
- Mfr.Part #
- IXFH120N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A TO247AD
- Stock
- 1,609
- In Stock :
- 1,609
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 22 mΩ
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Transistor Type :
- 1 N-Channel
- Drain-source On Resistance-Max :
- 0.022 Ω
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 714W Tc
- FET Feature :
- --
- Threshold Voltage :
- 5V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- Through Hole
- Published :
- 2006
- MSL :
- -
- Series :
- HiPerFET™, PolarP2™
- Surface Mount :
- No
- Height :
- 21.46mm
- Case Connection :
- DRAIN
- Channel Type :
- N
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Pin Count :
- 3
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current Id :
- 120A
- RoHS :
- Details
- Number of Terminals :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Product Category :
- MOSFET
- Package / Case :
- TO-247-3
- Product Status :
- Active
- Turn-On Delay Time :
- 30 ns
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Operating Temperature :
- -55°C~175°C TJ
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 31 ns
- JEDEC-95 Code :
- TO-247AD
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 120A
- Number of Elements per Chip :
- 1
- Input Capacitance :
- 6 nF
- Pbfree Code :
- yes
- Max Power Dissipation :
- 714 W
- Package Type :
- TO-247
- Reach Compliance Code :
- Compliant
- Min Operating Temperature :
- -55 °C
- Maximum Operating Temperature :
- +175 °C
- Width :
- 5.3mm
- ECCN Code :
- EAR99
- Power Dissipation-Max (Abs) :
- 714 W
- Drain to Source Resistance :
- 22 mΩ
- Drain to Source Breakdown Voltage :
- 200V
- Manufacturer :
- IXYS
- Brand :
- IXYS
- Tradename :
- HiPerFET
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 500mA, 10V
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Type :
- PolarHT HiPerFET Power MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Supplier Device Package :
- TO-247AD (IXFH)
- Qualification :
- -
- Turn On Delay Time :
- 30 ns
- Minimum Operating Temperature :
- -55 °C
- Number of Pins :
- 3
- Transistor Polarity :
- N-Channel
- Length :
- 16.26mm
- Resistance :
- 22mOhm
- Number of Elements :
- 1
- Power Dissipation :
- 714W
- Rise Time :
- 35ns
- DS Breakdown Voltage-Min :
- 200 V
- Number of Channels :
- 1 Channel
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e1
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Drain Current-Max (Abs) (ID) :
- 120 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Base Product Number :
- IXFH120
- Max Operating Temperature :
- 175 °C
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Voltage (Vdss) :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Factory Lead Time :
- 30 Weeks
- Additional Feature :
- AVALANCHE RATED
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation (Max) :
- 714W (Tc)
- Datasheets
- IXFH120N20P

N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-247-3
IXFH120N20P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 120 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 22 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFH120N20P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
single MOSFETs transistor is 22 mΩ
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IXFH120N20P Applications
There are a lot of IXYS
IXFH120N20P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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