IXFH120N20P

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Mfr.Part #
IXFH120N20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 120A TO247AD
Stock
1,609
In Stock :
1,609

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Max Power Dissipation :
714 W
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Power Dissipation-Max :
714W Tc
Type :
PolarHT HiPerFET Power MOSFET
Surface Mount :
No
Number of Terminals :
3
Configuration :
Single
Additional Feature :
AVALANCHE RATED
Turn On Delay Time :
30 ns
Drain to Source Voltage (Vdss) :
200V
Tradename :
HiPerFET
Turn-On Delay Time :
30 ns
Base Product Number :
IXFH120
Pbfree Code :
yes
Lead Free :
Lead Free
Power Dissipation-Max (Abs) :
714 W
Drain Current-Max (Abs) (ID) :
120 A
Continuous Drain Current Id :
120A
Power Dissipation (Max) :
714W (Tc)
Gate to Source Voltage (Vgs) :
20V
Height :
21.46mm
Channel Mode :
Enhancement
Threshold Voltage :
5V
ECCN Code :
EAR99
Vgs (Max) :
±20V
Package :
Tube
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Number of Pins :
3
Length :
16.26mm
Vgs(th) (Max) @ Id :
5V @ 4mA
Transistor Polarity :
N-Channel
Transistor Application :
SWITCHING
Min Operating Temperature :
-55 °C
Terminal Form :
THROUGH-HOLE
Product Category :
MOSFET
DS Breakdown Voltage-Min :
200 V
Supplier Device Package :
TO-247AD (IXFH)
Number of Terminations :
3
JESD-609 Code :
e1
Minimum Operating Temperature :
-55 °C
MSL :
-
RoHS :
Details
Packaging :
Tube
Factory Lead Time :
30 Weeks
Case Connection :
DRAIN
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.022 Ω
FET Feature :
--
Fall Time (Typ) :
31 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification :
-
Resistance :
22mOhm
JESD-30 Code :
R-PSFM-T3
Drain to Source Resistance :
22 mΩ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance :
6 nF
Width :
5.3mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Package / Case :
TO-247-3
Pulsed Drain Current-Max (IDM) :
300 A
Max Operating Temperature :
175 °C
Current - Continuous Drain (Id) @ 25°C :
120A Tc
FET Type :
N-Channel
Rds On Max :
22 mΩ
Turn-Off Delay Time :
100 ns
Package Type :
TO-247
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Brand :
IXYS
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Continuous Drain Current (ID) :
120A
Pin Count :
3
Manufacturer :
IXYS
Qualification Status :
Not Qualified
Product Type :
MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
Terminal Position :
Single
Rise Time :
35ns
Channel Type :
N
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-247AD
Power Dissipation :
714W
Drain to Source Breakdown Voltage :
200V
Maximum Operating Temperature :
+175 °C
Element Configuration :
Single
Product Status :
Active
Package Shape :
RECTANGULAR
Published :
2006
Number of Channels :
1 Channel
Operating Temperature :
-55°C~175°C TJ
Reach Compliance Code :
Compliant
Series :
HiPerFET™, PolarP2™
Number of Elements per Chip :
1
Avalanche Energy Rating (Eas) :
2000 mJ
Datasheets
IXFH120N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Type:PolarHT HiPerFET Power MOSFET, Number of Pins:3, Number of Terminations:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, IXFH120N20P pinout, IXFH120N20P datasheet PDF, IXFH120N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH120N20P


N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-247-3

IXFH120N20P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 120 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 22 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH120N20P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
single MOSFETs transistor is 22 mΩ
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)


IXFH120N20P Applications


There are a lot of IXYS
IXFH120N20P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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