IXFH120N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements per Chip :

1

Max Operating Temperature :

175 °C

Type :

PolarHT HiPerFET Power MOSFET

Terminal Form :

THROUGH-HOLE

Input Capacitance :

6 nF

Power Dissipation-Max (Abs) :

714 W

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Qualification Status :

Not Qualified

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.022 Ω

Product Type :

MOSFET

Transistor Type :

1 N-Channel

Package :

Tube

Drain to Source Breakdown Voltage :

200V

Base Product Number :

IXFH120

Mounting Style :

Through Hole

Supplier Device Package :

TO-247AD (IXFH)

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Number of Elements :

1

Minimum Operating Temperature :

-55 °C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Width :

5.3mm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

ECCN Code :

EAR99

Drain to Source Resistance :

22 mΩ

Channel Type :

N

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

714W Tc

Number of Pins :

3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

300 A

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Pin Count :

3

Drain to Source Voltage (Vdss) :

200V

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Reach Compliance Code :

Compliant

Maximum Operating Temperature :

+175 °C

Turn On Delay Time :

30 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Channels :

1 Channel

Rise Time :

35ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

120 A

JESD-609 Code :

e1

Package / Case :

TO-247-3

Published :

2006

Series :

HiPerFET™, PolarP2™

Packaging :

Tube

Channel Mode :

Enhancement

Turn-Off Delay Time :

100 ns

Vgs(th) (Max) @ Id :

5V @ 4mA

DS Breakdown Voltage-Min :

200 V

MSL :

-

Turn-On Delay Time :

30 ns

Avalanche Energy Rating (Eas) :

2000 mJ

Tradename :

HiPerFET

Qualification :

-

Height :

21.46mm

REACH SVHC :

No SVHC

Continuous Drain Current Id :

120A

Manufacturer :

IXYS

FET Feature :

--

Resistance :

22mOhm

Fall Time (Typ) :

31 ns

RoHS Status :

ROHS3 Compliant

RoHS :

Details

Package Type :

TO-247

Product Status :

Active

Min Operating Temperature :

-55 °C

Max Power Dissipation :

714 W

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Continuous Drain Current (ID) :

120A

Power Dissipation (Max) :

714W (Tc)

Surface Mount :

No

Threshold Voltage :

5V

Length :

16.26mm

Number of Terminations :

3

Terminal Position :

Single

Rds On Max :

22 mΩ

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-247AD

Power Dissipation :

714W

Factory Lead Time :

30 Weeks

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON