IXFH120N20P
- Mfr.Part #
- IXFH120N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A TO247AD
- Stock
- 1,609
- In Stock :
- 1,609
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation (Max) :
- 714W (Tc)
- Package Type :
- TO-247
- REACH SVHC :
- No SVHC
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 30 ns
- Number of Pins :
- 3
- MSL :
- -
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Terminal Form :
- THROUGH-HOLE
- Max Operating Temperature :
- 175 °C
- Length :
- 16.26mm
- Power Dissipation-Max (Abs) :
- 714 W
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.022 Ω
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 100 ns
- Published :
- 2006
- Tradename :
- HiPerFET
- Number of Elements per Chip :
- 1
- Number of Channels :
- 1 Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 152nC @ 10V
- Maximum Operating Temperature :
- +175 °C
- Brand :
- IXYS
- Height :
- 21.46mm
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Input Capacitance :
- 6 nF
- DS Breakdown Voltage-Min :
- 200 V
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Drain to Source Resistance :
- 22 mΩ
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 500mA, 10V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 120 A
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Series :
- HiPerFET™, PolarP2™
- Continuous Drain Current Id :
- 120A
- Package / Case :
- TO-247-3
- Rise Time :
- 35ns
- Type :
- PolarHT HiPerFET Power MOSFET
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- FET Feature :
- --
- Power Dissipation :
- 714W
- RoHS :
- Details
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 200V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Reach Compliance Code :
- Compliant
- Turn-On Delay Time :
- 30 ns
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Min Operating Temperature :
- -55 °C
- Manufacturer :
- IXYS
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Terminal Position :
- Single
- Max Power Dissipation :
- 714 W
- Packaging :
- Tube
- Factory Lead Time :
- 30 Weeks
- Minimum Operating Temperature :
- -55 °C
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 120A
- Base Product Number :
- IXFH120
- Pbfree Code :
- yes
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Threshold Voltage :
- 5V
- Polarity/Channel Type :
- N-Channel
- Resistance :
- 22mOhm
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 200V
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Power Dissipation-Max :
- 714W Tc
- Qualification :
- -
- Fall Time (Typ) :
- 31 ns
- Supplier Device Package :
- TO-247AD (IXFH)
- Rds On Max :
- 22 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Product Type :
- MOSFET
- JEDEC-95 Code :
- TO-247AD
- Channel Mode :
- Enhancement
- Channel Type :
- N
- Transistor Type :
- 1 N-Channel
- Width :
- 5.3mm
- Datasheets
- IXFH120N20P

N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-247-3
IXFH120N20P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 120 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 22 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFH120N20P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
single MOSFETs transistor is 22 mΩ
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IXFH120N20P Applications
There are a lot of IXYS
IXFH120N20P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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