IXFH120N20P

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Mfr.Part #
IXFH120N20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 120A TO247AD
Stock
1,609
In Stock :
1,609

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
--
Minimum Operating Temperature :
-55 °C
Rds On Max :
22 mΩ
JESD-609 Code :
e1
Drain to Source Resistance :
22 mΩ
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Brand :
IXYS
Element Configuration :
Single
Continuous Drain Current Id :
120A
Qualification Status :
Not Qualified
Transistor Polarity :
N-Channel
Product Status :
Active
MSL :
-
Max Operating Temperature :
175 °C
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
Turn-On Delay Time :
30 ns
Package Type :
TO-247
Operating Temperature :
-55°C~175°C TJ
Drain to Source Voltage (Vdss) :
200V
Drain-source On Resistance-Max :
0.022 Ω
Surface Mount :
No
Case Connection :
DRAIN
Factory Lead Time :
30 Weeks
Input Capacitance :
6 nF
Supplier Device Package :
TO-247AD (IXFH)
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lead Free :
Lead Free
Number of Terminations :
3
Power Dissipation-Max :
714W Tc
DS Breakdown Voltage-Min :
200 V
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Pin Count :
3
Packaging :
Tube
Qualification :
-
Pulsed Drain Current-Max (IDM) :
300 A
RoHS :
Details
Pbfree Code :
yes
REACH SVHC :
No SVHC
Additional Feature :
AVALANCHE RATED
Number of Channels :
1 Channel
Manufacturer :
IXYS
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Vgs(th) (Max) @ Id :
5V @ 4mA
Channel Mode :
Enhancement
Vgs (Max) :
±20V
ECCN Code :
EAR99
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
200V
Published :
2006
Number of Elements :
1
JEDEC-95 Code :
TO-247AD
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
RoHS Status :
ROHS3 Compliant
Tradename :
HiPerFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Min Operating Temperature :
-55 °C
FET Type :
N-Channel
Number of Terminals :
3
Type :
PolarHT HiPerFET Power MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
16.26mm
Power Dissipation :
714W
Series :
HiPerFET™, PolarP2™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+175 °C
Terminal Form :
THROUGH-HOLE
Transistor Application :
SWITCHING
Package / Case :
TO-247-3
Turn-Off Delay Time :
100 ns
Operating Mode :
ENHANCEMENT MODE
Width :
5.3mm
Power Dissipation-Max (Abs) :
714 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
Single
Product Type :
MOSFET
Rise Time :
35ns
Package :
Tube
Turn On Delay Time :
30 ns
Mount :
Through Hole
Base Product Number :
IXFH120
Avalanche Energy Rating (Eas) :
2000 mJ
Number of Elements per Chip :
1
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Threshold Voltage :
5V
Fall Time (Typ) :
31 ns
Channel Type :
N
Gate to Source Voltage (Vgs) :
20V
Mounting Style :
Through Hole
Power Dissipation (Max) :
714W (Tc)
Terminal Position :
Single
JESD-30 Code :
R-PSFM-T3
Continuous Drain Current (ID) :
120A
Max Power Dissipation :
714 W
Height :
21.46mm
Resistance :
22mOhm
Drain Current-Max (Abs) (ID) :
120 A
Product Category :
MOSFET
Datasheets
IXFH120N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Type:PolarHT HiPerFET Power MOSFET, Package / Case:TO-247-3, IXFH120N20P pinout, IXFH120N20P datasheet PDF, IXFH120N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH120N20P


N-Channel Tube 22m Ω @ 500mA, 10V ±20V 6000pF @ 25V 152nC @ 10V 200V TO-247-3

IXFH120N20P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 120 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 300 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 22 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH120N20P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
single MOSFETs transistor is 22 mΩ
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)


IXFH120N20P Applications


There are a lot of IXYS
IXFH120N20P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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