IXFH11N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Drain Current-Max (Abs) (ID) :

11 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Brand :

IXYS

Turn-Off Delay Time :

63 ns

Pbfree Code :

yes

Power Dissipation :

300W

Packaging :

Tube

Package Shape :

RECTANGULAR

Resistance :

950mOhm

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Channel Mode :

Enhancement

Voltage - Rated DC :

800V

Minimum Operating Temperature :

- 55 C

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Published :

2000

Package / Case :

TO-247-3

Case Connection :

DRAIN

Base Product Number :

IXFH11

Power Dissipation Ambient-Max :

300 W

Terminal Position :

Single

Element Configuration :

Single

Mount :

Through Hole

Tradename :

HyperFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

300W (Tc)

Package :

Tube

Fall Time (Typ) :

32 ns

Rise Time :

33ns

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Transistor Type :

1 N-Channel

Height :

21.46 mm

RoHS :

Details

Series :

HiPerFET™

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C~150°C TJ

Width :

5.3 mm

Pulsed Drain Current-Max (IDM) :

44A

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

800V

Current Rating :

11A

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

TO-247AD (IXFH)

Number of Terminals :

3

Number of Channels :

1 Channel

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Number of Terminations :

3

Product Category :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Continuous Drain Current (ID) :

11A

Drain-source On Resistance-Max :

0.95 Ω

Drain to Source Voltage (Vdss) :

800V

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Power Dissipation-Max (Abs) :

300 W

JEDEC-95 Code :

TO-247

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

16.26 mm

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

JESD-30 Code :

R-PSFM-T3

Transistor Polarity :

N-Channel

Power Dissipation-Max :

300W Tc

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

950m Ω @ 500mA, 10V

Product Status :

Active

Mounting Style :

Through Hole

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Radiation Hardening :

No

DS Breakdown Voltage-Min :

800 V

Configuration :

Single