IXFH11N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Maximum Operating Temperature :

+ 150 C

Series :

HiPerFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Number of Terminations :

3

Lead Free :

Lead Free

Product Category :

MOSFET

JESD-30 Code :

R-PSFM-T3

Additional Feature :

AVALANCHE RATED

Supplier Device Package :

TO-247AD (IXFH)

Number of Terminals :

3

Pulsed Drain Current-Max (IDM) :

44A

Current Rating :

11A

Power Dissipation-Max :

300W Tc

Turn-Off Delay Time :

63 ns

Manufacturer :

IXYS

Terminal Position :

Single

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

950m Ω @ 500mA, 10V

Continuous Drain Current (ID) :

11A

Fall Time (Typ) :

32 ns

Drain to Source Voltage (Vdss) :

800V

Resistance :

950mOhm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.95 Ω

Number of Channels :

1 Channel

Number of Pins :

3

Product Type :

MOSFET

Published :

2000

DS Breakdown Voltage-Min :

800 V

Pin Count :

3

Base Product Number :

IXFH11

Drain to Source Breakdown Voltage :

800V

Power Dissipation :

300W

Transistor Polarity :

N-Channel

FET Feature :

--

Power Dissipation-Max (Abs) :

300 W

Power Dissipation Ambient-Max :

300 W

RoHS :

Details

Packaging :

Tube

Package :

Tube

Width :

5.3 mm

Mounting Style :

Through Hole

JEDEC-95 Code :

TO-247

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Pbfree Code :

yes

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Transistor Type :

1 N-Channel

Reach Compliance Code :

Compliant

Case Connection :

DRAIN

Channel Mode :

Enhancement

Surface Mount :

No

Power Dissipation (Max) :

300W (Tc)

Brand :

IXYS

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Drain Current-Max (Abs) (ID) :

11 A

Length :

16.26 mm

Terminal Form :

THROUGH-HOLE

Voltage - Rated DC :

800V

Rise Time :

33ns

Element Configuration :

Single

Configuration :

Single

Tradename :

HyperFET

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Height :

21.46 mm

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Radiation Hardening :

No

Qualification Status :

Not Qualified