IXFH11N80
- Mfr.Part #
- IXFH11N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 11A TO247AD
- Stock
- 9,589
- In Stock :
- 9,589
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Published :
- 2000
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Drain-source On Resistance-Max :
- 0.95 Ω
- Polarity/Channel Type :
- N-Channel
- Radiation Hardening :
- No
- Power Dissipation Ambient-Max :
- 300 W
- Series :
- HiPerFET™
- FET Type :
- N-Channel
- Tradename :
- HyperFET
- JEDEC-95 Code :
- TO-247
- Transistor Polarity :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 300W Tc
- Current Rating :
- 11A
- Mount :
- Through Hole
- Product Category :
- MOSFET
- Rise Time :
- 33ns
- Turn-Off Delay Time :
- 63 ns
- RoHS :
- Details
- FET Feature :
- --
- Length :
- 16.26 mm
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 500mA, 10V
- Product Type :
- MOSFET
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 3
- Number of Terminations :
- 3
- Power Dissipation-Max (Abs) :
- 300 W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 44A
- Pin Count :
- 3
- Surface Mount :
- No
- Drain to Source Voltage (Vdss) :
- 800V
- Power Dissipation :
- 300W
- Base Product Number :
- IXFH11
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Drain Current-Max (Abs) (ID) :
- 11 A
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Supplier Device Package :
- TO-247AD (IXFH)
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 800V
- Width :
- 5.3 mm
- Number of Channels :
- 1 Channel
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Voltage - Rated DC :
- 800V
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Mounting Style :
- Through Hole
- Continuous Drain Current (ID) :
- 11A
- Fall Time (Typ) :
- 32 ns
- Brand :
- IXYS
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 300W (Tc)
- Package :
- Tube
- Lead Free :
- Lead Free
- Manufacturer :
- IXYS
- Package / Case :
- TO-247-3
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 800 V
- Packaging :
- Tube
- Configuration :
- Single
- Resistance :
- 950mOhm
- Height :
- 21.46 mm
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IXFH11N80

N-Channel Tube 950m Ω @ 500mA, 10V ±20V 4200pF @ 25V 155nC @ 10V 800V TO-247-3
IXFH11N80 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 11A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 11 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 63 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 44A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFH11N80 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 44A.
a 800V drain to source voltage (Vdss)
IXFH11N80 Applications
There are a lot of IXYS
IXFH11N80 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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