IXFH11N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max (Abs) :

300 W

Published :

2000

Voltage - Rated DC :

800V

Base Product Number :

IXFH11

JEDEC-95 Code :

TO-247

Configuration :

Single

Package Shape :

RECTANGULAR

Number of Terminals :

3

Lead Free :

Lead Free

Transistor Type :

1 N-Channel

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

RoHS :

Details

Turn-Off Delay Time :

63 ns

Series :

HiPerFET™

Surface Mount :

No

Maximum Operating Temperature :

+ 150 C

Mount :

Through Hole

Reach Compliance Code :

Compliant

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

DS Breakdown Voltage-Min :

800 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

33ns

Additional Feature :

AVALANCHE RATED

Current Rating :

11A

Mounting Type :

Through Hole

Channel Mode :

Enhancement

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Fall Time (Typ) :

32 ns

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

800V

Product Status :

Active

Pin Count :

3

Drain Current-Max (Abs) (ID) :

11 A

Terminal Position :

Single

Width :

5.3 mm

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Operating Temperature :

-55°C~150°C TJ

Tradename :

HyperFET

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Power Dissipation-Max :

300W Tc

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Pulsed Drain Current-Max (IDM) :

44A

Power Dissipation :

300W

Continuous Drain Current (ID) :

11A

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Resistance :

950mOhm

JESD-30 Code :

R-PSFM-T3

FET Feature :

--

Height :

21.46 mm

Mounting Style :

Through Hole

Length :

16.26 mm

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

0.95 Ω

Rds On (Max) @ Id, Vgs :

950m Ω @ 500mA, 10V

Brand :

IXYS

Transistor Element Material :

SILICON

Number of Terminations :

3

Number of Pins :

3

Element Configuration :

Single

Power Dissipation Ambient-Max :

300 W

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

300W (Tc)

Supplier Device Package :

TO-247AD (IXFH)

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel