IXFH11N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Pin Count :

3

Channel Mode :

Enhancement

RoHS :

Details

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED

Current Rating :

11A

Brand :

IXYS

Product Status :

Active

Fall Time (Typ) :

32 ns

Number of Pins :

3

Published :

2000

Mounting Type :

Through Hole

Base Product Number :

IXFH11

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

11 A

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Power Dissipation (Max) :

300W (Tc)

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Drain to Source Breakdown Voltage :

800V

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Series :

HiPerFET™

Mount :

Through Hole

Supplier Device Package :

TO-247AD (IXFH)

Power Dissipation-Max :

300W Tc

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-247

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Number of Channels :

1 Channel

Package :

Tube

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Maximum Operating Temperature :

+ 150 C

Power Dissipation Ambient-Max :

300 W

Packaging :

Tube

Tradename :

HyperFET

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Continuous Drain Current (ID) :

11A

Turn-Off Delay Time :

63 ns

Voltage - Rated DC :

800V

Power Dissipation :

300W

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Resistance :

950mOhm

Power Dissipation-Max (Abs) :

300 W

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

44A

Transistor Application :

SWITCHING

FET Feature :

--

Rise Time :

33ns

FET Type :

N-Channel

Case Connection :

DRAIN

Height :

21.46 mm

Terminal Position :

Single

Element Configuration :

Single

Package / Case :

TO-247-3

Drain to Source Voltage (Vdss) :

800V

Manufacturer :

IXYS

Mounting Style :

Through Hole

Terminal Form :

THROUGH-HOLE

Gate to Source Voltage (Vgs) :

20V

Product Type :

MOSFET

Width :

5.3 mm

Rds On (Max) @ Id, Vgs :

950m Ω @ 500mA, 10V

Operating Temperature :

-55°C~150°C TJ

Minimum Operating Temperature :

- 55 C

Number of Terminals :

3

Package Shape :

RECTANGULAR

Length :

16.26 mm

DS Breakdown Voltage-Min :

800 V

Drain-source On Resistance-Max :

0.95 Ω

Number of Terminations :

3

Vgs (Max) :

±20V