IXFH10N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Factory Lead Time :

30 Weeks

DS Breakdown Voltage-Min :

1000V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

1.4 Ω

Height :

21.46 mm

Number of Terminations :

3

Power Dissipation :

380W

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

380 W

Mount :

Through Hole

Package / Case :

TO-247-3

FET Type :

N-Channel

Supplier Device Package :

TO-247AD (IXFH)

Mounting Style :

Through Hole

Brand :

IXYS

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 5A, 10V

Maximum Operating Temperature :

+ 150 C

Tradename :

HiPerFET

RoHS :

Compliant

Rise Time :

45 ns

JEDEC-95 Code :

TO-247

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification :

-

Max Power Dissipation :

380 W

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Series :

HiPerFET™, PolarP2™

Pbfree Code :

yes

Pin Count :

3

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Rds On Max :

1.4 Ω

Product Status :

Active

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Case Connection :

DRAIN

Input Capacitance :

3.03 nF

Continuous Drain Current (ID) :

10A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Elements :

1

Power Dissipation (Max) :

380W (Tc)

Transistor Application :

SWITCHING

Continuous Drain Current Id :

10A

Pulsed Drain Current-Max (IDM) :

25A

Reach Compliance Code :

Compliant

Manufacturer :

IXYS

Drain Current-Max (Abs) (ID) :

10 A

Channel Mode :

Enhancement

Base Product Number :

IXFH10

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

1000V

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

500 mJ

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Package :

Tube

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Terminal Position :

Single

Power Dissipation-Max :

380W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Width :

5.3 mm

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSFM-T3

Published :

2008

FET Feature :

--

Number of Terminals :

3

Qualification Status :

Not Qualified

Length :

16.26 mm

Input Capacitance (Ciss) (Max) @ Vds :

3030pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Channel Type :

N Channel

Type :

Polar HiPerFET Power MOSFET

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±30V

Package Shape :

RECTANGULAR

JESD-609 Code :

e1