IXFH110N10P
- Mfr.Part #
- IXFH110N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 110A TO247AD
- Stock
- 48
- In Stock :
- 48
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 25 ns
- Height :
- 21.46mm
- Rise Time :
- 25ns
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Product Number :
- IXFH110
- Channel Mode :
- Enhancement
- JEDEC-95 Code :
- TO-247AD
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Published :
- 2006
- Power Dissipation (Max) :
- 480W (Tc)
- Number of Pins :
- 3
- Series :
- PolarHT™ HiPerFET™
- Terminal Form :
- THROUGH-HOLE
- Pin Count :
- 3
- Width :
- 5.3mm
- FET Feature :
- --
- Reach Compliance Code :
- Compliant
- MSL :
- -
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 30 Weeks
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- Channel Type :
- N
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 250A
- Drain to Source Breakdown Voltage :
- 100V
- Drain-source On Resistance-Max :
- 0.015 Ω
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Product Type :
- MOSFET
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 100 V
- Qualification :
- -
- Drain to Source Voltage (Vdss) :
- 100V
- Mounting Style :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Surface Mount :
- No
- Tradename :
- HiPerFET
- Package / Case :
- TO-247-3
- Additional Feature :
- AVALANCHE RATED
- Transistor Polarity :
- N-Channel
- Continuous Drain Current (ID) :
- 110A
- Power Dissipation :
- 480W
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Length :
- 16.26mm
- Type :
- PolarHT HiPerFET Power MOSFET
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3550pF @ 25V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Supplier Device Package :
- TO-247AD (IXFH)
- Power Dissipation-Max :
- 480W Tc
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Minimum Operating Temperature :
- -55 °C
- Threshold Voltage :
- 5V
- Package Shape :
- RECTANGULAR
- Subcategory :
- MOSFETs
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- +175 °C
- Turn-Off Delay Time :
- 65 ns
- Turn On Delay Time :
- 21 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e1
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 500mA, 10V
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Configuration :
- Single
- Number of Terminations :
- 3
- Package Type :
- TO-247
- Continuous Drain Current Id :
- 110A
- Number of Elements per Chip :
- 1
- Number of Terminals :
- 3
- Datasheets
- IXFH110N10P

N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3
IXFH110N10P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N10P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)
IXFH110N10P Applications
There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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