IXFH110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100V

Length :

16.26mm

Channel Type :

N

Product Type :

MOSFET

Case Connection :

DRAIN

Published :

2006

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

RoHS :

Details

Number of Terminals :

3

Width :

5.3mm

FET Type :

N-Channel

Product Category :

MOSFET

Turn On Delay Time :

21 ns

Packaging :

Tube

Avalanche Energy Rating (Eas) :

1000 mJ

Manufacturer :

IXYS

Radiation Hardening :

No

DS Breakdown Voltage-Min :

100 V

Supplier Device Package :

TO-247AD (IXFH)

Channel Mode :

Enhancement

Type :

PolarHT HiPerFET Power MOSFET

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Package Shape :

RECTANGULAR

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Product Status :

Active

Qualification :

-

Power Dissipation (Max) :

480W (Tc)

Number of Elements :

1

Height :

21.46mm

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Turn-Off Delay Time :

65 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Number of Channels :

1 Channel

Minimum Operating Temperature :

-55 °C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

250A

Mounting Type :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs (Max) :

±20V

Element Configuration :

Single

Factory Lead Time :

30 Weeks

Vgs(th) (Max) @ Id :

5V @ 4mA

Maximum Operating Temperature :

+175 °C

Series :

PolarHT™ HiPerFET™

FET Feature :

--

Mounting Style :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Package :

Tube

Number of Pins :

3

Brand :

IXYS

Fall Time (Typ) :

25 ns

Terminal Form :

THROUGH-HOLE

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Configuration :

Single

JESD-609 Code :

e1

Transistor Type :

1 N-Channel

Drain-source On Resistance-Max :

0.015 Ω

JEDEC-95 Code :

TO-247AD

Package Type :

TO-247

Continuous Drain Current Id :

110A

Tradename :

HiPerFET

Subcategory :

MOSFETs

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Threshold Voltage :

5V

Power Dissipation-Max :

480W Tc

Power Dissipation :

480W

Pin Count :

3

Rise Time :

25ns

Surface Mount :

No

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

110A

ECCN Code :

EAR99

Number of Terminations :

3

Package / Case :

TO-247-3

Reach Compliance Code :

Compliant

MSL :

-

Base Product Number :

IXFH110

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements per Chip :

1