IXFH110N10P
- Mfr.Part #
- IXFH110N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 110A TO247AD
- Stock
- 48
- In Stock :
- 48
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Maximum Operating Temperature :
- +175 °C
- Continuous Drain Current (ID) :
- 110A
- Mounting Type :
- Through Hole
- RoHS :
- Details
- Number of Terminals :
- 3
- Turn-Off Delay Time :
- 65 ns
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- Qualification :
- -
- Minimum Operating Temperature :
- -55 °C
- Terminal Form :
- THROUGH-HOLE
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 100V
- Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.015 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 3550pF @ 25V
- Power Dissipation-Max :
- 480W Tc
- Surface Mount :
- No
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Number of Elements per Chip :
- 1
- Rise Time :
- 25ns
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 480W (Tc)
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Transistor Element Material :
- SILICON
- Tradename :
- HiPerFET
- Type :
- PolarHT HiPerFET Power MOSFET
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 250A
- Subcategory :
- MOSFETs
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Factory Lead Time :
- 30 Weeks
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Transistor Type :
- 1 N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Threshold Voltage :
- 5V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 5.3mm
- Terminal Position :
- Single
- Series :
- PolarHT™ HiPerFET™
- Height :
- 21.46mm
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1 Channel
- Package Type :
- TO-247
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 500mA, 10V
- Length :
- 16.26mm
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Power Dissipation :
- 480W
- REACH SVHC :
- No SVHC
- Channel Mode :
- Enhancement
- Number of Terminations :
- 3
- Mounting Style :
- Through Hole
- Fall Time (Typ) :
- 25 ns
- Product Type :
- MOSFET
- MSL :
- -
- Continuous Drain Current Id :
- 110A
- Case Connection :
- DRAIN
- Base Product Number :
- IXFH110
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- Turn On Delay Time :
- 21 ns
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-247AD (IXFH)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Brand :
- IXYS
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Polarity :
- N-Channel
- Published :
- 2006
- Package Shape :
- RECTANGULAR
- Channel Type :
- N
- DS Breakdown Voltage-Min :
- 100 V
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-247AD
- FET Feature :
- --
- Datasheets
- IXFH110N10P

N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3
IXFH110N10P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N10P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)
IXFH110N10P Applications
There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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