IXFH110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

25ns

Type :

PolarHT HiPerFET Power MOSFET

Threshold Voltage :

5V

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Configuration :

Single

Power Dissipation (Max) :

480W (Tc)

Terminal Form :

THROUGH-HOLE

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drain-source On Resistance-Max :

0.015 Ω

Power Dissipation :

480W

DS Breakdown Voltage-Min :

100 V

ECCN Code :

EAR99

Number of Pins :

3

Vgs (Max) :

±20V

Packaging :

Tube

Fall Time (Typ) :

25 ns

Product Status :

Active

Additional Feature :

AVALANCHE RATED

Height :

21.46mm

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Surface Mount :

No

Factory Lead Time :

30 Weeks

Qualification Status :

Not Qualified

Mount :

Through Hole

Pin Count :

3

Number of Elements :

1

Terminal Position :

Single

RoHS :

Details

Package Type :

TO-247

Subcategory :

MOSFETs

Package / Case :

TO-247-3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Qualification :

-

Transistor Application :

SWITCHING

MSL :

-

Supplier Device Package :

TO-247AD (IXFH)

Tradename :

HiPerFET

Radiation Hardening :

No

Power Dissipation-Max :

480W Tc

Continuous Drain Current Id :

110A

Number of Channels :

1 Channel

Package :

Tube

Channel Type :

N

Number of Elements per Chip :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

JESD-30 Code :

R-PSFM-T3

Series :

PolarHT™ HiPerFET™

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Mounting Style :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

100V

Maximum Operating Temperature :

+175 °C

Pulsed Drain Current-Max (IDM) :

250A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Pbfree Code :

yes

Transistor Polarity :

N-Channel

Package Shape :

RECTANGULAR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

5.3mm

Published :

2006

Channel Mode :

Enhancement

Base Product Number :

IXFH110

Turn-Off Delay Time :

65 ns

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

1000 mJ

Element Configuration :

Single

FET Feature :

--

JEDEC-95 Code :

TO-247AD

Manufacturer :

IXYS

Reach Compliance Code :

Compliant

FET Type :

N-Channel

JESD-609 Code :

e1

Minimum Operating Temperature :

-55 °C

Vgs(th) (Max) @ Id :

5V @ 4mA

Transistor Type :

1 N-Channel

Continuous Drain Current (ID) :

110A

Product Category :

MOSFET

Length :

16.26mm

Turn On Delay Time :

21 ns

Brand :

IXYS