IXFH110N10P

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Mfr.Part #
IXFH110N10P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO247AD
Stock
48
In Stock :
48

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
25 ns
Height :
21.46mm
Rise Time :
25ns
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Base Product Number :
IXFH110
Channel Mode :
Enhancement
JEDEC-95 Code :
TO-247AD
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
5V @ 4mA
Published :
2006
Power Dissipation (Max) :
480W (Tc)
Number of Pins :
3
Series :
PolarHT™ HiPerFET™
Terminal Form :
THROUGH-HOLE
Pin Count :
3
Width :
5.3mm
FET Feature :
--
Reach Compliance Code :
Compliant
MSL :
-
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
30 Weeks
Product Category :
MOSFET
Mount :
Through Hole
Case Connection :
DRAIN
Channel Type :
N
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
250A
Drain to Source Breakdown Voltage :
100V
Drain-source On Resistance-Max :
0.015 Ω
JESD-30 Code :
R-PSFM-T3
Operating Temperature :
-55°C~175°C TJ
Radiation Hardening :
No
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Product Type :
MOSFET
Product Status :
Active
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
100 V
Qualification :
-
Drain to Source Voltage (Vdss) :
100V
Mounting Style :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Surface Mount :
No
Tradename :
HiPerFET
Package / Case :
TO-247-3
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
N-Channel
Continuous Drain Current (ID) :
110A
Power Dissipation :
480W
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Length :
16.26mm
Type :
PolarHT HiPerFET Power MOSFET
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
FET Type :
N-Channel
Element Configuration :
Single
Supplier Device Package :
TO-247AD (IXFH)
Power Dissipation-Max :
480W Tc
Packaging :
Tube
REACH SVHC :
No SVHC
Minimum Operating Temperature :
-55 °C
Threshold Voltage :
5V
Package Shape :
RECTANGULAR
Subcategory :
MOSFETs
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+175 °C
Turn-Off Delay Time :
65 ns
Turn On Delay Time :
21 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e1
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
Brand :
IXYS
Avalanche Energy Rating (Eas) :
1000 mJ
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
RoHS :
Details
Configuration :
Single
Number of Terminations :
3
Package Type :
TO-247
Continuous Drain Current Id :
110A
Number of Elements per Chip :
1
Number of Terminals :
3
Datasheets
IXFH110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Type:PolarHT HiPerFET Power MOSFET, Number of Channels:1 Channel, Number of Terminations:3, IXFH110N10P pinout, IXFH110N10P datasheet PDF, IXFH110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3

IXFH110N10P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXFH110N10P Applications


There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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