IXFH110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

-55 °C

Subcategory :

MOSFETs

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Transistor Type :

1 N-Channel

Threshold Voltage :

5V

Length :

16.26mm

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Base Product Number :

IXFH110

DS Breakdown Voltage-Min :

100 V

Continuous Drain Current Id :

110A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Tradename :

HiPerFET

Rise Time :

25ns

Channel Type :

N

Supplier Device Package :

TO-247AD (IXFH)

Package Type :

TO-247

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

RoHS :

Details

Qualification :

-

Packaging :

Tube

Mount :

Through Hole

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Number of Elements per Chip :

1

MSL :

-

Drain to Source Voltage (Vdss) :

100V

Pbfree Code :

yes

Maximum Operating Temperature :

+175 °C

Height :

21.46mm

Published :

2006

Number of Terminals :

3

Transistor Element Material :

SILICON

Turn On Delay Time :

21 ns

Continuous Drain Current (ID) :

110A

Fall Time (Typ) :

25 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Drain to Source Breakdown Voltage :

100V

Radiation Hardening :

No

Configuration :

Single

FET Feature :

--

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Power Dissipation-Max :

480W Tc

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1 Channel

Width :

5.3mm

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Case Connection :

DRAIN

Product Status :

Active

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-247AD

Product Type :

MOSFET

JESD-609 Code :

e1

Package :

Tube

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drain-source On Resistance-Max :

0.015 Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

5V @ 4mA

Type :

PolarHT HiPerFET Power MOSFET

Channel Mode :

Enhancement

Terminal Position :

Single

Factory Lead Time :

30 Weeks

Package / Case :

TO-247-3

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

250A

Mounting Style :

Through Hole

Power Dissipation (Max) :

480W (Tc)

Series :

PolarHT™ HiPerFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Category :

MOSFET

Vgs (Max) :

±20V

Manufacturer :

IXYS

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

65 ns

Power Dissipation :

480W

Number of Pins :

3

Avalanche Energy Rating (Eas) :

1000 mJ

Qualification Status :

Not Qualified