IXFH110N10P

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Mfr.Part #
IXFH110N10P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO247AD
Stock
48
In Stock :
48

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-247AD (IXFH)
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
JEDEC-95 Code :
TO-247AD
Mount :
Through Hole
Mounting Type :
Through Hole
Threshold Voltage :
5V
Qualification Status :
Not Qualified
Pin Count :
3
Vgs (Max) :
±20V
Avalanche Energy Rating (Eas) :
1000 mJ
Channel Type :
N
Pulsed Drain Current-Max (IDM) :
250A
Product Status :
Active
Brand :
IXYS
Series :
PolarHT™ HiPerFET™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
Fall Time (Typ) :
25 ns
Manufacturer :
IXYS
Number of Elements :
1
Factory Lead Time :
30 Weeks
Transistor Application :
SWITCHING
Continuous Drain Current Id :
110A
Minimum Operating Temperature :
-55 °C
Surface Mount :
No
Drain to Source Breakdown Voltage :
100V
JESD-609 Code :
e1
Power Dissipation (Max) :
480W (Tc)
Configuration :
Single
Drain-source On Resistance-Max :
0.015 Ω
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Radiation Hardening :
No
JESD-30 Code :
R-PSFM-T3
Case Connection :
DRAIN
Rise Time :
25ns
Number of Pins :
3
Number of Channels :
1 Channel
Operating Temperature :
-55°C~175°C TJ
Qualification :
-
DS Breakdown Voltage-Min :
100 V
MSL :
-
Height :
21.46mm
Package Type :
TO-247
Package / Case :
TO-247-3
Terminal Position :
Single
Channel Mode :
Enhancement
Turn On Delay Time :
21 ns
Element Configuration :
Single
Tradename :
HiPerFET
Drain to Source Voltage (Vdss) :
100V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
65 ns
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Package Shape :
RECTANGULAR
Width :
5.3mm
Maximum Operating Temperature :
+175 °C
Power Dissipation :
480W
Additional Feature :
AVALANCHE RATED
REACH SVHC :
No SVHC
Package :
Tube
Mounting Style :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Operating Mode :
ENHANCEMENT MODE
Base Product Number :
IXFH110
Terminal Form :
THROUGH-HOLE
Number of Elements per Chip :
1
Type :
PolarHT HiPerFET Power MOSFET
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Pbfree Code :
yes
FET Feature :
--
Number of Terminations :
3
Number of Terminals :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Continuous Drain Current (ID) :
110A
Length :
16.26mm
Product Type :
MOSFET
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Packaging :
Tube
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
480W Tc
Transistor Element Material :
SILICON
Published :
2006
Subcategory :
MOSFETs
Datasheets
IXFH110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, Type:PolarHT HiPerFET Power MOSFET, Number of Terminations:3, IXFH110N10P pinout, IXFH110N10P datasheet PDF, IXFH110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3

IXFH110N10P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXFH110N10P Applications


There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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