IXFH110N10P

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Mfr.Part #
IXFH110N10P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO247AD
Stock
48
In Stock :
48

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Power Dissipation (Max) :
480W (Tc)
REACH SVHC :
No SVHC
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Qualification :
-
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Tradename :
HiPerFET
Element Configuration :
Single
Mount :
Through Hole
Product Type :
MOSFET
Number of Elements per Chip :
1
DS Breakdown Voltage-Min :
100 V
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Drain to Source Breakdown Voltage :
100V
Drain-source On Resistance-Max :
0.015 Ω
Length :
16.26mm
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
PolarHT™ HiPerFET™
JESD-609 Code :
e1
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Rise Time :
25ns
Transistor Polarity :
N-Channel
RoHS :
Details
Mounting Type :
Through Hole
Threshold Voltage :
5V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Fall Time (Typ) :
25 ns
Turn On Delay Time :
21 ns
Maximum Operating Temperature :
+175 °C
Pin Count :
3
Channel Mode :
Enhancement
Factory Lead Time :
30 Weeks
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
5V @ 4mA
Configuration :
Single
Surface Mount :
No
Power Dissipation-Max :
480W Tc
Package / Case :
TO-247-3
Avalanche Energy Rating (Eas) :
1000 mJ
JEDEC-95 Code :
TO-247AD
Pulsed Drain Current-Max (IDM) :
250A
Type :
PolarHT HiPerFET Power MOSFET
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Turn-Off Delay Time :
65 ns
Package Type :
TO-247
Product Status :
Active
Product Category :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-247AD (IXFH)
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
100V
Continuous Drain Current (ID) :
110A
Number of Terminations :
3
Package :
Tube
Manufacturer :
IXYS
Transistor Type :
1 N-Channel
Height :
21.46mm
Minimum Operating Temperature :
-55 °C
Brand :
IXYS
Number of Elements :
1
Power Dissipation :
480W
Subcategory :
MOSFETs
Width :
5.3mm
Radiation Hardening :
No
Vgs (Max) :
±20V
Published :
2006
Operating Temperature :
-55°C~175°C TJ
Mounting Style :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
MSL :
-
Base Product Number :
IXFH110
Channel Type :
N
FET Feature :
--
Number of Terminals :
3
Continuous Drain Current Id :
110A
Datasheets
IXFH110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-247-3, Type:PolarHT HiPerFET Power MOSFET, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, IXFH110N10P pinout, IXFH110N10P datasheet PDF, IXFH110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3

IXFH110N10P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXFH110N10P Applications


There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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