IXFH110N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

480W (Tc)

Continuous Drain Current (ID) :

110A

Power Dissipation :

480W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

16.26mm

Qualification Status :

Not Qualified

Pbfree Code :

yes

JESD-609 Code :

e1

Fall Time (Typ) :

25 ns

Brand :

IXYS

Package Shape :

RECTANGULAR

MSL :

-

Surface Mount :

No

Mount :

Through Hole

Number of Channels :

1 Channel

Reach Compliance Code :

Compliant

Manufacturer :

IXYS

Pin Count :

3

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Element Configuration :

Single

Product Type :

MOSFET

Continuous Drain Current Id :

110A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package :

Tube

Drain to Source Breakdown Voltage :

100V

Maximum Operating Temperature :

+175 °C

Width :

5.3mm

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Configuration :

Single

Height :

21.46mm

Transistor Type :

1 N-Channel

Package / Case :

TO-247-3

Type :

PolarHT HiPerFET Power MOSFET

Tradename :

HiPerFET

Rise Time :

25ns

Factory Lead Time :

30 Weeks

Turn On Delay Time :

21 ns

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

65 ns

Drain-source On Resistance-Max :

0.015 Ω

Supplier Device Package :

TO-247AD (IXFH)

Series :

PolarHT™ HiPerFET™

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

5V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Minimum Operating Temperature :

-55 °C

Number of Terminals :

3

RoHS :

Details

Qualification :

-

Number of Elements per Chip :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Packaging :

Tube

DS Breakdown Voltage-Min :

100 V

RoHS Status :

ROHS3 Compliant

Package Type :

TO-247

Pulsed Drain Current-Max (IDM) :

250A

Vgs(th) (Max) @ Id :

5V @ 4mA

Terminal Position :

Single

Subcategory :

MOSFETs

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-247AD

Mounting Style :

Through Hole

Number of Elements :

1

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

1000 mJ

Rds On (Max) @ Id, Vgs :

15m Ω @ 500mA, 10V

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

FET Feature :

--

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

480W Tc

Channel Type :

N

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Base Product Number :

IXFH110

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

100V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Published :

2006

Transistor Element Material :

SILICON

Channel Mode :

Enhancement