IXFH110N10P
- Mfr.Part #
- IXFH110N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 110A TO247AD
- Stock
- 48
- In Stock :
- 48
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e1
- Power Dissipation :
- 480W
- Tradename :
- HiPerFET
- Pbfree Code :
- yes
- Package Type :
- TO-247
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 30 Weeks
- FET Type :
- N-Channel
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 500mA, 10V
- Mounting Type :
- Through Hole
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Rise Time :
- 25ns
- Turn On Delay Time :
- 21 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- JEDEC-95 Code :
- TO-247AD
- Product Category :
- MOSFET
- Number of Elements per Chip :
- 1
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3550pF @ 25V
- Configuration :
- Single
- Supplier Device Package :
- TO-247AD (IXFH)
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transistor Type :
- 1 N-Channel
- DS Breakdown Voltage-Min :
- 100 V
- Mounting Style :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Number of Terminals :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current Id :
- 110A
- Drain to Source Breakdown Voltage :
- 100V
- Maximum Operating Temperature :
- +175 °C
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Mount :
- Through Hole
- Element Configuration :
- Single
- Series :
- PolarHT™ HiPerFET™
- FET Feature :
- --
- Continuous Drain Current (ID) :
- 110A
- Product Status :
- Active
- Terminal Form :
- THROUGH-HOLE
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Minimum Operating Temperature :
- -55 °C
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 65 ns
- Case Connection :
- DRAIN
- MSL :
- -
- Qualification Status :
- Not Qualified
- Qualification :
- -
- Threshold Voltage :
- 5V
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXFH110
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation (Max) :
- 480W (Tc)
- Width :
- 5.3mm
- Drain-source On Resistance-Max :
- 0.015 Ω
- Fall Time (Typ) :
- 25 ns
- Channel Mode :
- Enhancement
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 250A
- JESD-30 Code :
- R-PSFM-T3
- Type :
- PolarHT HiPerFET Power MOSFET
- Height :
- 21.46mm
- Published :
- 2006
- Pin Count :
- 3
- Channel Type :
- N
- Power Dissipation-Max :
- 480W Tc
- Reach Compliance Code :
- Compliant
- Length :
- 16.26mm
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Surface Mount :
- No
- Product Type :
- MOSFET
- Subcategory :
- MOSFETs
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 100V
- Datasheets
- IXFH110N10P

N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3
IXFH110N10P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N10P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)
IXFH110N10P Applications
There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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