IXFH110N10P
- Mfr.Part #
- IXFH110N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 110A TO247AD
- Stock
- 48
- In Stock :
- 48
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 16.26mm
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2006
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 500mA, 10V
- Product Type :
- MOSFET
- Pin Count :
- 3
- Height :
- 21.46mm
- RoHS Status :
- ROHS3 Compliant
- Brand :
- IXYS
- Element Configuration :
- Single
- Turn On Delay Time :
- 21 ns
- Power Dissipation-Max :
- 480W Tc
- Case Connection :
- DRAIN
- Product Category :
- MOSFET
- Transistor Polarity :
- N-Channel
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 25 ns
- Number of Terminals :
- 3
- Power Dissipation :
- 480W
- Transistor Type :
- 1 N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Gate to Source Voltage (Vgs) :
- 20V
- Minimum Operating Temperature :
- -55 °C
- Input Capacitance (Ciss) (Max) @ Vds :
- 3550pF @ 25V
- Product Status :
- Active
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Type :
- N
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Package Type :
- TO-247
- Surface Mount :
- No
- RoHS :
- Details
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-247AD (IXFH)
- Rise Time :
- 25ns
- Factory Lead Time :
- 30 Weeks
- Subcategory :
- MOSFETs
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Series :
- PolarHT™ HiPerFET™
- Number of Elements per Chip :
- 1
- Maximum Operating Temperature :
- +175 °C
- Pulsed Drain Current-Max (IDM) :
- 250A
- Manufacturer :
- IXYS
- JEDEC-95 Code :
- TO-247AD
- Width :
- 5.3mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- MSL :
- -
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Through Hole
- Package :
- Tube
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Turn-Off Delay Time :
- 65 ns
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Type :
- PolarHT HiPerFET Power MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.015 Ω
- Continuous Drain Current (ID) :
- 110A
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Power Dissipation (Max) :
- 480W (Tc)
- Threshold Voltage :
- 5V
- Tradename :
- HiPerFET
- Continuous Drain Current Id :
- 110A
- FET Feature :
- --
- Drain to Source Breakdown Voltage :
- 100V
- Base Product Number :
- IXFH110
- JESD-609 Code :
- e1
- Qualification :
- -
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSFM-T3
- Channel Mode :
- Enhancement
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~175°C TJ
- DS Breakdown Voltage-Min :
- 100 V
- Datasheets
- IXFH110N10P

N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3
IXFH110N10P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N10P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)
IXFH110N10P Applications
There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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