IXFH110N10P

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Mfr.Part #
IXFH110N10P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO247AD
Stock
48
In Stock :
48

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-247-3
Subcategory :
MOSFETs
Number of Terminations :
3
Power Dissipation :
480W
Package Type :
TO-247
Base Product Number :
IXFH110
Packaging :
Tube
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
Transistor Polarity :
N-Channel
Avalanche Energy Rating (Eas) :
1000 mJ
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
110A Tc
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Product Status :
Active
Channel Mode :
Enhancement
Transistor Element Material :
SILICON
Package :
Tube
Width :
5.3mm
Channel Type :
N
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Element Configuration :
Single
Mount :
Through Hole
Power Dissipation-Max :
480W Tc
Tradename :
HiPerFET
Minimum Operating Temperature :
-55 °C
Number of Elements :
1
Reach Compliance Code :
Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification :
-
Continuous Drain Current (ID) :
110A
Height :
21.46mm
Supplier Device Package :
TO-247AD (IXFH)
Drain-source On Resistance-Max :
0.015 Ω
Transistor Type :
1 N-Channel
Number of Pins :
3
Radiation Hardening :
No
Mounting Style :
Through Hole
Maximum Operating Temperature :
+175 °C
Threshold Voltage :
5V
JESD-609 Code :
e1
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
100V
Published :
2006
Series :
PolarHT™ HiPerFET™
Power Dissipation (Max) :
480W (Tc)
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
MSL :
-
Fall Time (Typ) :
25 ns
Factory Lead Time :
30 Weeks
Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Pin Count :
3
Continuous Drain Current Id :
110A
JEDEC-95 Code :
TO-247AD
Product Type :
MOSFET
Number of Elements per Chip :
1
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
100V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pulsed Drain Current-Max (IDM) :
250A
Terminal Form :
THROUGH-HOLE
Turn-Off Delay Time :
65 ns
Length :
16.26mm
FET Type :
N-Channel
FET Feature :
--
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Rise Time :
25ns
DS Breakdown Voltage-Min :
100 V
Number of Terminals :
3
Qualification Status :
Not Qualified
REACH SVHC :
No SVHC
Brand :
IXYS
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
5V @ 4mA
Package Shape :
RECTANGULAR
Turn On Delay Time :
21 ns
Number of Channels :
1 Channel
Type :
PolarHT HiPerFET Power MOSFET
Datasheets
IXFH110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1 Channel, Type:PolarHT HiPerFET Power MOSFET, IXFH110N10P pinout, IXFH110N10P datasheet PDF, IXFH110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3

IXFH110N10P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXFH110N10P Applications


There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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