IXFH110N10P
- Mfr.Part #
- IXFH110N10P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 110A TO247AD
- Stock
- 48
- In Stock :
- 48
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 480W (Tc)
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Qualification :
- -
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 500mA, 10V
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- Tradename :
- HiPerFET
- Element Configuration :
- Single
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Number of Elements per Chip :
- 1
- DS Breakdown Voltage-Min :
- 100 V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Drain to Source Breakdown Voltage :
- 100V
- Drain-source On Resistance-Max :
- 0.015 Ω
- Length :
- 16.26mm
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- PolarHT™ HiPerFET™
- JESD-609 Code :
- e1
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 25ns
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Mounting Type :
- Through Hole
- Threshold Voltage :
- 5V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 25 ns
- Turn On Delay Time :
- 21 ns
- Maximum Operating Temperature :
- +175 °C
- Pin Count :
- 3
- Channel Mode :
- Enhancement
- Factory Lead Time :
- 30 Weeks
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Configuration :
- Single
- Surface Mount :
- No
- Power Dissipation-Max :
- 480W Tc
- Package / Case :
- TO-247-3
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- JEDEC-95 Code :
- TO-247AD
- Pulsed Drain Current-Max (IDM) :
- 250A
- Type :
- PolarHT HiPerFET Power MOSFET
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 3550pF @ 25V
- Turn-Off Delay Time :
- 65 ns
- Package Type :
- TO-247
- Product Status :
- Active
- Product Category :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-247AD (IXFH)
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Continuous Drain Current (ID) :
- 110A
- Number of Terminations :
- 3
- Package :
- Tube
- Manufacturer :
- IXYS
- Transistor Type :
- 1 N-Channel
- Height :
- 21.46mm
- Minimum Operating Temperature :
- -55 °C
- Brand :
- IXYS
- Number of Elements :
- 1
- Power Dissipation :
- 480W
- Subcategory :
- MOSFETs
- Width :
- 5.3mm
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Published :
- 2006
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Style :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- MSL :
- -
- Base Product Number :
- IXFH110
- Channel Type :
- N
- FET Feature :
- --
- Number of Terminals :
- 3
- Continuous Drain Current Id :
- 110A
- Datasheets
- IXFH110N10P

N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3
IXFH110N10P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N10P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)
IXFH110N10P Applications
There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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