IXFH110N10P

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Mfr.Part #
IXFH110N10P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO247AD
Stock
48
In Stock :
48

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
REACH SVHC :
No SVHC
Tradename :
HiPerFET
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
250A
Turn-Off Delay Time :
65 ns
Base Product Number :
IXFH110
Additional Feature :
AVALANCHE RATED
FET Type :
N-Channel
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Power Dissipation (Max) :
480W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Continuous Drain Current (ID) :
110A
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Channel Mode :
Enhancement
Package / Case :
TO-247-3
Number of Terminations :
3
Drain to Source Breakdown Voltage :
100V
Pin Count :
3
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5V @ 4mA
JESD-609 Code :
e1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
RoHS :
Details
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
0.015 Ω
Mounting Type :
Through Hole
Factory Lead Time :
30 Weeks
Threshold Voltage :
5V
Pbfree Code :
yes
Rise Time :
25ns
Mount :
Through Hole
Minimum Operating Temperature :
-55 °C
Package :
Tube
Power Dissipation :
480W
Package Type :
TO-247
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
1000 mJ
Height :
21.46mm
Published :
2006
Continuous Drain Current Id :
110A
ECCN Code :
EAR99
Supplier Device Package :
TO-247AD (IXFH)
Number of Terminals :
3
Manufacturer :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Number of Elements per Chip :
1
Number of Elements :
1
Surface Mount :
No
Configuration :
Single
MSL :
-
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
110A Tc
JEDEC-95 Code :
TO-247AD
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Mounting Style :
Through Hole
Brand :
IXYS
Terminal Position :
Single
Series :
PolarHT™ HiPerFET™
Number of Pins :
3
Package Shape :
RECTANGULAR
Radiation Hardening :
No
Maximum Operating Temperature :
+175 °C
Power Dissipation-Max :
480W Tc
Qualification :
-
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
100 V
Drain to Source Voltage (Vdss) :
100V
Width :
5.3mm
Product Type :
MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Channel Type :
N
Subcategory :
MOSFETs
Reach Compliance Code :
Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Type :
PolarHT HiPerFET Power MOSFET
Turn On Delay Time :
21 ns
Fall Time (Typ) :
25 ns
Length :
16.26mm
Datasheets
IXFH110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1 Channel, Type:PolarHT HiPerFET Power MOSFET, IXFH110N10P pinout, IXFH110N10P datasheet PDF, IXFH110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3

IXFH110N10P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXFH110N10P Applications


There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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