IXFH110N10P

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Mfr.Part #
IXFH110N10P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO247AD
Stock
48
In Stock :
48

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
IXYS
Mount :
Through Hole
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Maximum Operating Temperature :
+175 °C
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSFM-T3
Operating Temperature :
-55°C~175°C TJ
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
25ns
Package Type :
TO-247
Continuous Drain Current (ID) :
110A
Continuous Drain Current Id :
110A
Vgs (Max) :
±20V
REACH SVHC :
No SVHC
Product Status :
Active
Terminal Form :
THROUGH-HOLE
Number of Terminals :
3
Fall Time (Typ) :
25 ns
Packaging :
Tube
Transistor Element Material :
SILICON
Supplier Device Package :
TO-247AD (IXFH)
Height :
21.46mm
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
65 ns
Avalanche Energy Rating (Eas) :
1000 mJ
Number of Elements per Chip :
1
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
100V
Turn On Delay Time :
21 ns
Mounting Style :
Through Hole
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
480W
ECCN Code :
EAR99
Product Category :
MOSFET
Surface Mount :
No
Minimum Operating Temperature :
-55 °C
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
100V
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Qualification Status :
Not Qualified
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
480W (Tc)
Number of Pins :
3
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
DS Breakdown Voltage-Min :
100 V
Pin Count :
3
Product Type :
MOSFET
Number of Terminations :
3
Reach Compliance Code :
Compliant
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Base Product Number :
IXFH110
Factory Lead Time :
30 Weeks
Additional Feature :
AVALANCHE RATED
Tradename :
HiPerFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e1
Transistor Polarity :
N-Channel
JEDEC-95 Code :
TO-247AD
Vgs(th) (Max) @ Id :
5V @ 4mA
RoHS :
Details
Element Configuration :
Single
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
250A
Mounting Type :
Through Hole
Terminal Position :
Single
Threshold Voltage :
5V
Transistor Application :
SWITCHING
Radiation Hardening :
No
Drain-source On Resistance-Max :
0.015 Ω
Series :
PolarHT™ HiPerFET™
Qualification :
-
Channel Mode :
Enhancement
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
MSL :
-
Power Dissipation-Max :
480W Tc
Length :
16.26mm
Published :
2006
Number of Channels :
1 Channel
Width :
5.3mm
Type :
PolarHT HiPerFET Power MOSFET
Channel Type :
N
Configuration :
Single
Package / Case :
TO-247-3
Manufacturer :
IXYS
Subcategory :
MOSFETs
Datasheets
IXFH110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Type:PolarHT HiPerFET Power MOSFET, Package / Case:TO-247-3, IXFH110N10P pinout, IXFH110N10P datasheet PDF, IXFH110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-247-3

IXFH110N10P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 250A.
a threshold voltage of 5V
a 100V drain to source voltage (Vdss)


IXFH110N10P Applications


There are a lot of IXYS
IXFH110N10P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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