IXFH10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Maximum Operating Temperature :

+ 150 C

Type :

PolarHV HiPerFET Power MOSFET

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Min Operating Temperature :

-55 °C

Drain-source On Resistance-Max :

1.1 Ω

Qualification :

-

Terminal Position :

Single

Channel Mode :

Enhancement

Manufacturer :

IXYS

Power Dissipation-Max :

300W Tc

Rds On Max :

1.1 Ω

Case Connection :

DRAIN

Height :

21.46 mm

Length :

16.26 mm

Input Capacitance :

2.05 nF

FET Feature :

--

Factory Lead Time :

30 Weeks

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

600 mJ

Continuous Drain Current (ID) :

10A

Number of Terminals :

3

Published :

2009

Transistor Element Material :

SILICON

Packaging :

Tube

DS Breakdown Voltage-Min :

800 V

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Mounting Style :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

10 A

Rise Time :

22ns

Power Dissipation (Max) :

300W (Tc)

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-247AA

Width :

5.3 mm

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

800V

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Product Type :

MOSFET

Number of Channels :

1 Channel

Surface Mount :

No

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Configuration :

Single

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

RoHS :

Details

Supplier Device Package :

TO-247AD (IXFH)

Vgs (Max) :

±30V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Drain to Source Voltage (Vdss) :

800V

Continuous Drain Current Id :

10A

Drain to Source Resistance :

1.1 Ω

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

300W

Package :

Tube

Turn-Off Delay Time :

62 ns

Base Product Number :

IXFH10

Channel Type :

N Channel

Element Configuration :

Single

JESD-609 Code :

e1

Pulsed Drain Current-Max (IDM) :

30A

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max (Abs) :

300 W

Polarity/Channel Type :

N-Channel

Pin Count :

3

Series :

HiPerFET™, PolarHT™

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

300 W

Mount :

Through Hole

Package / Case :

TO-247-3

Tradename :

HiPerFET

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

22 ns

Max Operating Temperature :

150 °C

Number of Elements :

1

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V