IXFH10N80P
- Mfr.Part #
- IXFH10N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 10A TO247AD
- Stock
- 80
- In Stock :
- 80
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Continuous Drain Current Id :
- 10A
- Product Type :
- MOSFET
- Brand :
- IXYS
- Mounting Style :
- Through Hole
- Height :
- 21.46 mm
- Drain to Source Breakdown Voltage :
- 800V
- Turn-Off Delay Time :
- 62 ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Product Status :
- Active
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 300W (Tc)
- Width :
- 5.3 mm
- Package / Case :
- TO-247-3
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Type :
- PolarHV HiPerFET Power MOSFET
- Vgs (Max) :
- ±30V
- FET Feature :
- --
- Length :
- 16.26 mm
- Manufacturer :
- IXYS
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Product Category :
- MOSFET
- Tradename :
- HiPerFET
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Power Dissipation-Max (Abs) :
- 300 W
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Max Operating Temperature :
- 150 °C
- Transistor Type :
- 1 N-Channel
- Drain-source On Resistance-Max :
- 1.1 Ω
- Reach Compliance Code :
- Compliant
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 10 A
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Series :
- HiPerFET™, PolarHT™
- Channel Mode :
- Enhancement
- Channel Type :
- N Channel
- Rise Time :
- 22ns
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- DS Breakdown Voltage-Min :
- 800 V
- Base Product Number :
- IXFH10
- Configuration :
- Single
- Factory Lead Time :
- 30 Weeks
- Rds On Max :
- 1.1 Ω
- Pulsed Drain Current-Max (IDM) :
- 30A
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Drain to Source Resistance :
- 1.1 Ω
- Max Power Dissipation :
- 300 W
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- RoHS :
- Details
- Published :
- 2009
- Package :
- Tube
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 22 ns
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 300W Tc
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Min Operating Temperature :
- -55 °C
- Drain to Source Voltage (Vdss) :
- 800V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Continuous Drain Current (ID) :
- 10A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Qualification :
- -
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-247AA
- Number of Terminals :
- 3
- Supplier Device Package :
- TO-247AD (IXFH)
- Input Capacitance :
- 2.05 nF
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 300W
- Datasheets
- IXFH10N80P

N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-247-3
IXFH10N80P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2050pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 62 ns.Peak drain current is 30A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 1.1 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH10N80P Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30A.
single MOSFETs transistor is 1.1 Ω
a 800V drain to source voltage (Vdss)
IXFH10N80P Applications
There are a lot of IXYS
IXFH10N80P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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