IXFH10N80P

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Mfr.Part #
IXFH10N80P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO247AD
Stock
80
In Stock :
80

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Mode :
Enhancement
Avalanche Energy Rating (Eas) :
600 mJ
JESD-30 Code :
R-PSFM-T3
Drain Current-Max (Abs) (ID) :
10 A
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Terminal Form :
THROUGH-HOLE
Power Dissipation (Max) :
300W (Tc)
Drain to Source Breakdown Voltage :
800V
Max Operating Temperature :
150 °C
Max Power Dissipation :
300 W
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Reach Compliance Code :
Compliant
Number of Terminals :
3
Case Connection :
DRAIN
Published :
2009
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
300W
Brand :
IXYS
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 25V
Drain to Source Resistance :
1.1 Ω
Manufacturer :
IXYS
Number of Channels :
1 Channel
Type :
PolarHV HiPerFET Power MOSFET
JEDEC-95 Code :
TO-247AA
Rds On Max :
1.1 Ω
RoHS Status :
ROHS3 Compliant
Base Product Number :
IXFH10
Turn-Off Delay Time :
62 ns
Fall Time (Typ) :
22 ns
Power Dissipation-Max (Abs) :
300 W
Terminal Position :
Single
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Rise Time :
22ns
Min Operating Temperature :
-55 °C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Tradename :
HiPerFET
Drain to Source Voltage (Vdss) :
800V
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Product Status :
Active
Lead Free :
Lead Free
Package :
Tube
Drain-source On Resistance-Max :
1.1 Ω
Minimum Operating Temperature :
- 55 C
Length :
16.26 mm
Number of Terminations :
3
Width :
5.3 mm
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e1
Mounting Type :
Through Hole
Product Type :
MOSFET
Continuous Drain Current (ID) :
10A
Power Dissipation-Max :
300W Tc
Qualification :
-
Continuous Drain Current Id :
10A
Package / Case :
TO-247-3
Product Category :
MOSFET
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Qualification Status :
Not Qualified
Transistor Type :
1 N-Channel
DS Breakdown Voltage-Min :
800 V
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Pin Count :
3
Pbfree Code :
yes
RoHS :
Details
Polarity/Channel Type :
N-Channel
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
30A
Operating Temperature :
-55°C~150°C TJ
Height :
21.46 mm
FET Feature :
--
Vgs (Max) :
±30V
Packaging :
Tube
Supplier Device Package :
TO-247AD (IXFH)
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
30V
Maximum Operating Temperature :
+ 150 C
Channel Type :
N Channel
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Series :
HiPerFET™, PolarHT™
Surface Mount :
No
Mounting Style :
Through Hole
Factory Lead Time :
30 Weeks
Additional Feature :
AVALANCHE RATED
Input Capacitance :
2.05 nF
Datasheets
IXFH10N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Type:PolarHV HiPerFET Power MOSFET, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, IXFH10N80P pinout, IXFH10N80P datasheet PDF, IXFH10N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH10N80P


N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-247-3

IXFH10N80P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2050pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 62 ns.Peak drain current is 30A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 1.1 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH10N80P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30A.
single MOSFETs transistor is 1.1 Ω
a 800V drain to source voltage (Vdss)


IXFH10N80P Applications


There are a lot of IXYS
IXFH10N80P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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