IXFH10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Channel Type :

N Channel

Width :

5.3 mm

Additional Feature :

AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2009

Drain to Source Voltage (Vdss) :

800V

Qualification :

-

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Style :

Through Hole

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

30A

Number of Elements :

1

Power Dissipation-Max (Abs) :

300 W

Base Product Number :

IXFH10

Series :

HiPerFET™, PolarHT™

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Rds On Max :

1.1 Ω

Continuous Drain Current (ID) :

10A

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Configuration :

Single

Length :

16.26 mm

Input Capacitance :

2.05 nF

Drain Current-Max (Abs) (ID) :

10 A

Package Shape :

RECTANGULAR

Drain to Source Resistance :

1.1 Ω

Continuous Drain Current Id :

10A

Qualification Status :

Not Qualified

Min Operating Temperature :

-55 °C

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Number of Channels :

1 Channel

Product Status :

Active

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Operating Temperature :

150 °C

Transistor Type :

1 N-Channel

Number of Terminations :

3

Number of Terminals :

3

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Packaging :

Tube

DS Breakdown Voltage-Min :

800 V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

FET Feature :

--

Power Dissipation :

300W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HiPerFET

Type :

PolarHV HiPerFET Power MOSFET

Supplier Device Package :

TO-247AD (IXFH)

Pin Count :

3

Channel Mode :

Enhancement

Max Power Dissipation :

300 W

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

800V

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Maximum Operating Temperature :

+ 150 C

Gate to Source Voltage (Vgs) :

30V

Rise Time :

22ns

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Factory Lead Time :

30 Weeks

Manufacturer :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Brand :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Pbfree Code :

yes

JEDEC-95 Code :

TO-247AA

Avalanche Energy Rating (Eas) :

600 mJ

Element Configuration :

Single

RoHS :

Details

Height :

21.46 mm

Product Category :

MOSFET

Drain-source On Resistance-Max :

1.1 Ω

Turn-Off Delay Time :

62 ns

Power Dissipation (Max) :

300W (Tc)

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

300W Tc

Fall Time (Typ) :

22 ns