IXFH10N80P

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Mfr.Part #
IXFH10N80P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO247AD
Stock
80
In Stock :
80

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Vgs (Max) :
±30V
Product Category :
MOSFET
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
3
Case Connection :
DRAIN
Turn-Off Delay Time :
62 ns
Rise Time :
22ns
FET Type :
N-Channel
Type :
PolarHV HiPerFET Power MOSFET
Terminal Form :
THROUGH-HOLE
Min Operating Temperature :
-55 °C
Power Dissipation (Max) :
300W (Tc)
Fall Time (Typ) :
22 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Factory Lead Time :
30 Weeks
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED
Polarity/Channel Type :
N-Channel
Width :
5.3 mm
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
Manufacturer :
IXYS
DS Breakdown Voltage-Min :
800 V
Gate to Source Voltage (Vgs) :
30V
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Channel Type :
N Channel
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
30A
Drain Current-Max (Abs) (ID) :
10 A
Number of Elements :
1
Published :
2009
Mounting Style :
Through Hole
Lead Free :
Lead Free
Minimum Operating Temperature :
- 55 C
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Power Dissipation-Max :
300W Tc
Base Product Number :
IXFH10
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Pbfree Code :
yes
Product Status :
Active
Supplier Device Package :
TO-247AD (IXFH)
JESD-30 Code :
R-PSFM-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
16.26 mm
Power Dissipation :
300W
Height :
21.46 mm
Max Operating Temperature :
150 °C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Element Configuration :
Single
Number of Terminals :
3
Product Type :
MOSFET
Transistor Application :
SWITCHING
Input Capacitance :
2.05 nF
Package Shape :
RECTANGULAR
FET Feature :
--
Continuous Drain Current (ID) :
10A
Package / Case :
TO-247-3
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
300 W
Drain to Source Breakdown Voltage :
800V
Brand :
IXYS
Max Power Dissipation :
300 W
Transistor Type :
1 N-Channel
Continuous Drain Current Id :
10A
Avalanche Energy Rating (Eas) :
600 mJ
Qualification :
-
Pin Count :
3
Drain to Source Resistance :
1.1 Ω
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Tradename :
HiPerFET
Number of Channels :
1 Channel
Series :
HiPerFET™, PolarHT™
Terminal Position :
Single
Package :
Tube
Drain-source On Resistance-Max :
1.1 Ω
Rds On Max :
1.1 Ω
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
800V
JESD-609 Code :
e1
Surface Mount :
No
RoHS :
Details
JEDEC-95 Code :
TO-247AA
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 25V
Datasheets
IXFH10N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Type:PolarHV HiPerFET Power MOSFET, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXFH10N80P pinout, IXFH10N80P datasheet PDF, IXFH10N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH10N80P


N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-247-3

IXFH10N80P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2050pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 62 ns.Peak drain current is 30A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 1.1 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH10N80P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30A.
single MOSFETs transistor is 1.1 Ω
a 800V drain to source voltage (Vdss)


IXFH10N80P Applications


There are a lot of IXYS
IXFH10N80P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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