IXFH10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

10 A

Vgs (Max) :

±30V

Element Configuration :

Single

Surface Mount :

No

Configuration :

Single

Fall Time (Typ) :

22 ns

Qualification Status :

Not Qualified

Min Operating Temperature :

-55 °C

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3

Manufacturer :

IXYS

Power Dissipation :

300W

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Max Operating Temperature :

150 °C

Transistor Type :

1 N-Channel

Transistor Element Material :

SILICON

Type :

PolarHV HiPerFET Power MOSFET

Width :

5.3 mm

Channel Type :

N Channel

Tradename :

HiPerFET

Operating Temperature :

-55°C~150°C TJ

RoHS :

Details

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Mount :

Through Hole

FET Type :

N-Channel

Channel Mode :

Enhancement

Number of Terminals :

3

Product Status :

Active

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

Drain to Source Breakdown Voltage :

800V

Base Product Number :

IXFH10

Power Dissipation-Max :

300W Tc

Rds On Max :

1.1 Ω

Series :

HiPerFET™, PolarHT™

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Mounting Style :

Through Hole

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

300 W

Packaging :

Tube

Transistor Polarity :

N-Channel

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

300W (Tc)

Supplier Device Package :

TO-247AD (IXFH)

Pulsed Drain Current-Max (IDM) :

30A

DS Breakdown Voltage-Min :

800 V

Factory Lead Time :

30 Weeks

Rise Time :

22ns

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Avalanche Energy Rating (Eas) :

600 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

10A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1 Channel

Turn-Off Delay Time :

62 ns

Length :

16.26 mm

Qualification :

-

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Drain to Source Voltage (Vdss) :

800V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Number of Terminations :

3

Height :

21.46 mm

Drain to Source Resistance :

1.1 Ω

FET Feature :

--

Published :

2009

JEDEC-95 Code :

TO-247AA

Continuous Drain Current Id :

10A

JESD-609 Code :

e1

Brand :

IXYS

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

1.1 Ω

Pbfree Code :

yes

Input Capacitance :

2.05 nF

Max Power Dissipation :

300 W

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR