IXFH10N80P
- Mfr.Part #
- IXFH10N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 10A TO247AD
- Stock
- 80
- In Stock :
- 80
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-247AA
- Transistor Polarity :
- N-Channel
- Package :
- Tube
- Pin Count :
- 3
- Power Dissipation-Max :
- 300W Tc
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Voltage (Vdss) :
- 800V
- Supplier Device Package :
- TO-247AD (IXFH)
- Continuous Drain Current Id :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Tradename :
- HiPerFET
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Qualification Status :
- Not Qualified
- Channel Mode :
- Enhancement
- Rds On Max :
- 1.1 Ω
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Published :
- 2009
- Power Dissipation :
- 300W
- Power Dissipation (Max) :
- 300W (Tc)
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- 800V
- FET Feature :
- --
- Product Status :
- Active
- Max Operating Temperature :
- 150 °C
- Qualification :
- -
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package / Case :
- TO-247-3
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 800 V
- Element Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 300 W
- RoHS :
- Details
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 1.1 Ω
- Width :
- 5.3 mm
- FET Type :
- N-Channel
- Length :
- 16.26 mm
- Case Connection :
- DRAIN
- Channel Type :
- N Channel
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Surface Mount :
- No
- Minimum Operating Temperature :
- - 55 C
- Turn-Off Delay Time :
- 62 ns
- Package Shape :
- RECTANGULAR
- Rise Time :
- 22ns
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Min Operating Temperature :
- -55 °C
- Number of Channels :
- 1 Channel
- Number of Terminals :
- 3
- Product Category :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- Mount :
- Through Hole
- Max Power Dissipation :
- 300 W
- Pulsed Drain Current-Max (IDM) :
- 30A
- Product Type :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Drain to Source Resistance :
- 1.1 Ω
- Number of Elements :
- 1
- Height :
- 21.46 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- Mounting Style :
- Through Hole
- Input Capacitance :
- 2.05 nF
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Series :
- HiPerFET™, PolarHT™
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Reach Compliance Code :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 10 A
- Continuous Drain Current (ID) :
- 10A
- Fall Time (Typ) :
- 22 ns
- Type :
- PolarHV HiPerFET Power MOSFET
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Base Product Number :
- IXFH10
- Factory Lead Time :
- 30 Weeks
- Datasheets
- IXFH10N80P
IXFH10N80P Documents

N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-247-3
IXFH10N80P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2050pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 62 ns.Peak drain current is 30A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 1.1 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH10N80P Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30A.
single MOSFETs transistor is 1.1 Ω
a 800V drain to source voltage (Vdss)
IXFH10N80P Applications
There are a lot of IXYS
IXFH10N80P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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