IXFH10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Continuous Drain Current Id :

10A

Product Type :

MOSFET

Brand :

IXYS

Mounting Style :

Through Hole

Height :

21.46 mm

Drain to Source Breakdown Voltage :

800V

Turn-Off Delay Time :

62 ns

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

300W (Tc)

Width :

5.3 mm

Package / Case :

TO-247-3

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Type :

PolarHV HiPerFET Power MOSFET

Vgs (Max) :

±30V

FET Feature :

--

Length :

16.26 mm

Manufacturer :

IXYS

Package Shape :

RECTANGULAR

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Product Category :

MOSFET

Tradename :

HiPerFET

Avalanche Energy Rating (Eas) :

600 mJ

Power Dissipation-Max (Abs) :

300 W

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Max Operating Temperature :

150 °C

Transistor Type :

1 N-Channel

Drain-source On Resistance-Max :

1.1 Ω

Reach Compliance Code :

Compliant

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Polarity :

N-Channel

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

10 A

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Series :

HiPerFET™, PolarHT™

Channel Mode :

Enhancement

Channel Type :

N Channel

Rise Time :

22ns

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Gate to Source Voltage (Vgs) :

30V

DS Breakdown Voltage-Min :

800 V

Base Product Number :

IXFH10

Configuration :

Single

Factory Lead Time :

30 Weeks

Rds On Max :

1.1 Ω

Pulsed Drain Current-Max (IDM) :

30A

Pin Count :

3

Lead Free :

Lead Free

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Drain to Source Resistance :

1.1 Ω

Max Power Dissipation :

300 W

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

RoHS :

Details

Published :

2009

Package :

Tube

FET Type :

N-Channel

Fall Time (Typ) :

22 ns

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max :

300W Tc

Packaging :

Tube

Transistor Element Material :

SILICON

Number of Terminations :

3

Min Operating Temperature :

-55 °C

Drain to Source Voltage (Vdss) :

800V

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Continuous Drain Current (ID) :

10A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Qualification :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-247AA

Number of Terminals :

3

Supplier Device Package :

TO-247AD (IXFH)

Input Capacitance :

2.05 nF

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

300W