IXFH10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Vgs (Max) :

±30V

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

Case Connection :

DRAIN

Turn-Off Delay Time :

62 ns

Rise Time :

22ns

FET Type :

N-Channel

Type :

PolarHV HiPerFET Power MOSFET

Terminal Form :

THROUGH-HOLE

Min Operating Temperature :

-55 °C

Power Dissipation (Max) :

300W (Tc)

Fall Time (Typ) :

22 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Factory Lead Time :

30 Weeks

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Width :

5.3 mm

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Manufacturer :

IXYS

DS Breakdown Voltage-Min :

800 V

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Channel Type :

N Channel

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

30A

Drain Current-Max (Abs) (ID) :

10 A

Number of Elements :

1

Published :

2009

Mounting Style :

Through Hole

Lead Free :

Lead Free

Minimum Operating Temperature :

- 55 C

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Power Dissipation-Max :

300W Tc

Base Product Number :

IXFH10

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Pbfree Code :

yes

Product Status :

Active

Supplier Device Package :

TO-247AD (IXFH)

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

16.26 mm

Power Dissipation :

300W

Height :

21.46 mm

Max Operating Temperature :

150 °C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Number of Terminals :

3

Product Type :

MOSFET

Transistor Application :

SWITCHING

Input Capacitance :

2.05 nF

Package Shape :

RECTANGULAR

FET Feature :

--

Continuous Drain Current (ID) :

10A

Package / Case :

TO-247-3

Reach Compliance Code :

Compliant

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

300 W

Drain to Source Breakdown Voltage :

800V

Brand :

IXYS

Max Power Dissipation :

300 W

Transistor Type :

1 N-Channel

Continuous Drain Current Id :

10A

Avalanche Energy Rating (Eas) :

600 mJ

Qualification :

-

Pin Count :

3

Drain to Source Resistance :

1.1 Ω

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Tradename :

HiPerFET

Number of Channels :

1 Channel

Series :

HiPerFET™, PolarHT™

Terminal Position :

Single

Package :

Tube

Drain-source On Resistance-Max :

1.1 Ω

Rds On Max :

1.1 Ω

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

800V

JESD-609 Code :

e1

Surface Mount :

No

RoHS :

Details

JEDEC-95 Code :

TO-247AA

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V