IXFH10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Rise Time :

22ns

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Manufacturer :

IXYS

Number of Elements :

1

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Height :

21.46 mm

Drain to Source Resistance :

1.1 Ω

Tradename :

HiPerFET

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

Channel Type :

N Channel

Drain to Source Voltage (Vdss) :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800 V

Transistor Application :

SWITCHING

Power Dissipation :

300W

Qualification :

-

Drain Current-Max (Abs) (ID) :

10 A

Type :

PolarHV HiPerFET Power MOSFET

Vgs (Max) :

±30V

Power Dissipation (Max) :

300W (Tc)

JEDEC-95 Code :

TO-247AA

Number of Terminals :

3

Pbfree Code :

yes

Max Power Dissipation :

300 W

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Package :

Tube

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Length :

16.26 mm

Lead Free :

Lead Free

RoHS :

Details

Packaging :

Tube

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Product Category :

MOSFET

Brand :

IXYS

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

10A

RoHS Status :

ROHS3 Compliant

Number of Channels :

1 Channel

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Rds On Max :

1.1 Ω

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Series :

HiPerFET™, PolarHT™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance :

2.05 nF

Base Product Number :

IXFH10

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

300W Tc

Pin Count :

3

Drain-source On Resistance-Max :

1.1 Ω

Gate to Source Voltage (Vgs) :

30V

Supplier Device Package :

TO-247AD (IXFH)

Power Dissipation-Max (Abs) :

300 W

Max Operating Temperature :

150 °C

Avalanche Energy Rating (Eas) :

600 mJ

Published :

2009

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

Turn-Off Delay Time :

62 ns

Mounting Style :

Through Hole

Continuous Drain Current Id :

10A

FET Type :

N-Channel

Min Operating Temperature :

-55 °C

Package / Case :

TO-247-3

Fall Time (Typ) :

22 ns

Factory Lead Time :

30 Weeks

Transistor Type :

1 N-Channel

Drain to Source Breakdown Voltage :

800V

Configuration :

Single

Surface Mount :

No

Channel Mode :

Enhancement

Pulsed Drain Current-Max (IDM) :

30A

Width :

5.3 mm