IXFH10N80P
- Mfr.Part #
- IXFH10N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 10A TO247AD
- Stock
- 80
- In Stock :
- 80
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 22ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Height :
- 21.46 mm
- Drain to Source Resistance :
- 1.1 Ω
- Tradename :
- HiPerFET
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Channel Type :
- N Channel
- Drain to Source Voltage (Vdss) :
- 800V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 800 V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 300W
- Qualification :
- -
- Drain Current-Max (Abs) (ID) :
- 10 A
- Type :
- PolarHV HiPerFET Power MOSFET
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 300W (Tc)
- JEDEC-95 Code :
- TO-247AA
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Max Power Dissipation :
- 300 W
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Package :
- Tube
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Length :
- 16.26 mm
- Lead Free :
- Lead Free
- RoHS :
- Details
- Packaging :
- Tube
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Product Category :
- MOSFET
- Brand :
- IXYS
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- FET Feature :
- --
- Rds On Max :
- 1.1 Ω
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Series :
- HiPerFET™, PolarHT™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance :
- 2.05 nF
- Base Product Number :
- IXFH10
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 300W Tc
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 1.1 Ω
- Gate to Source Voltage (Vgs) :
- 30V
- Supplier Device Package :
- TO-247AD (IXFH)
- Power Dissipation-Max (Abs) :
- 300 W
- Max Operating Temperature :
- 150 °C
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Published :
- 2009
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 62 ns
- Mounting Style :
- Through Hole
- Continuous Drain Current Id :
- 10A
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55 °C
- Package / Case :
- TO-247-3
- Fall Time (Typ) :
- 22 ns
- Factory Lead Time :
- 30 Weeks
- Transistor Type :
- 1 N-Channel
- Drain to Source Breakdown Voltage :
- 800V
- Configuration :
- Single
- Surface Mount :
- No
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 30A
- Width :
- 5.3 mm
- Datasheets
- IXFH10N80P

N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-247-3
IXFH10N80P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2050pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 62 ns.Peak drain current is 30A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 1.1 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH10N80P Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30A.
single MOSFETs transistor is 1.1 Ω
a 800V drain to source voltage (Vdss)
IXFH10N80P Applications
There are a lot of IXYS
IXFH10N80P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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