IXFH10N90
- Mfr.Part #
- IXFH10N90
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 10A TO247AD
- Stock
- 42,283
- In Stock :
- 42,283
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300W
- Base Product Number :
- IXFH10
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 18 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- Transistor Application :
- SWITCHING
- Product Status :
- Obsolete
- Power Dissipation (Max) :
- 300W (Tc)
- Published :
- 2003
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 40A
- Qualification Status :
- Not Qualified
- Package :
- Tube
- Continuous Drain Current (ID) :
- 10A
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Package / Case :
- TO-247-3
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 51 ns
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Power Dissipation Ambient-Max :
- 300 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- Manufacturer :
- Littelfuse Inc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Single
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 1.1 Ω
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Number of Terminals :
- 3
- Terminal Form :
- THROUGH-HOLE
- Current Rating :
- 10A
- Drain to Source Voltage (Vdss) :
- 900V
- Lead Free :
- Contains Lead
- Drain Current-Max (Abs) (ID) :
- 10 A
- Voltage - Rated DC :
- 900V
- DS Breakdown Voltage-Min :
- 900 V
- Rise Time :
- 12ns
- Additional Feature :
- AVALANCHE RATED
- Series :
- HiPerFET™
- Element Configuration :
- Single
- Power Dissipation-Max :
- 300W Tc
- Drain to Source Breakdown Voltage :
- 900V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 300 W
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- JEDEC-95 Code :
- TO-247AD
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Supplier Device Package :
- TO-247AD (IXFH)
- Pbfree Code :
- yes
- Datasheets
- IXFH10N90

N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3
IXFH10N90 Overview
The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.As shown in the table below, the drain current of this device is 10 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH10N90 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)
IXFH10N90 Applications
There are a lot of IXYS
IXFH10N90 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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