IXFH10N90
- Mfr.Part #
- IXFH10N90
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 10A TO247AD
- Stock
- 42,283
- In Stock :
- 42,283
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 51 ns
- Voltage - Rated DC :
- 900V
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Contains Lead
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- Littelfuse Inc
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 300W Tc
- JEDEC-95 Code :
- TO-247AD
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 10A
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Product Status :
- Obsolete
- Base Product Number :
- IXFH10
- Series :
- HiPerFET™
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- Package / Case :
- TO-247-3
- Package Shape :
- RECTANGULAR
- RoHS Status :
- RoHS Compliant
- Number of Terminals :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 40A
- Drain Current-Max (Abs) (ID) :
- 10 A
- Continuous Drain Current (ID) :
- 10A
- Terminal Position :
- Single
- FET Feature :
- --
- Package :
- Tube
- Drain-source On Resistance-Max :
- 1.1 Ω
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2003
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Pin Count :
- 3
- Fall Time (Typ) :
- 18 ns
- Power Dissipation :
- 300W
- Rise Time :
- 12ns
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 900V
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 900 V
- Power Dissipation (Max) :
- 300W (Tc)
- Power Dissipation-Max (Abs) :
- 300 W
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Power Dissipation Ambient-Max :
- 300 W
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-247AD (IXFH)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 900V
- Datasheets
- IXFH10N90
IXFH10N90 Documents

N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3
IXFH10N90 Overview
The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.As shown in the table below, the drain current of this device is 10 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH10N90 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)
IXFH10N90 Applications
There are a lot of IXYS
IXFH10N90 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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