IXFH10N90
- Mfr.Part #
- IXFH10N90
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 10A TO247AD
- Stock
- 42,283
- In Stock :
- 42,283
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminals :
- 3
- Additional Feature :
- AVALANCHE RATED
- Product Status :
- Obsolete
- Power Dissipation (Max) :
- 300W (Tc)
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 40A
- Lead Free :
- Contains Lead
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Manufacturer :
- Littelfuse Inc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 1.1 Ω
- Supplier Device Package :
- TO-247AD (IXFH)
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Reach Compliance Code :
- Compliant
- Current Rating :
- 10A
- DS Breakdown Voltage-Min :
- 900 V
- Transistor Application :
- SWITCHING
- Published :
- 2003
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-247-3
- Base Product Number :
- IXFH10
- Power Dissipation-Max (Abs) :
- 300 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Fall Time (Typ) :
- 18 ns
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 12ns
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 4mA
- Power Dissipation Ambient-Max :
- 300 W
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- Power Dissipation-Max :
- 300W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Series :
- HiPerFET™
- JEDEC-95 Code :
- TO-247AD
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 300W
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 900V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 25V
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 900V
- Continuous Drain Current (ID) :
- 10A
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 10 A
- Drain to Source Breakdown Voltage :
- 900V
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Terminal Form :
- THROUGH-HOLE
- Turn-Off Delay Time :
- 51 ns
- Datasheets
- IXFH10N90
IXFH10N90 Documents

N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3
IXFH10N90 Overview
The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.As shown in the table below, the drain current of this device is 10 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH10N90 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)
IXFH10N90 Applications
There are a lot of IXYS
IXFH10N90 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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