IXFH10N90

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Mfr.Part #
IXFH10N90
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 900V 10A TO247AD
Stock
42,283
In Stock :
42,283

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Additional Feature :
AVALANCHE RATED
Product Status :
Obsolete
Power Dissipation (Max) :
300W (Tc)
Element Configuration :
Single
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
40A
Lead Free :
Contains Lead
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Manufacturer :
Littelfuse Inc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
1.1 Ω
Supplier Device Package :
TO-247AD (IXFH)
Surface Mount :
No
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
Not Applicable
Reach Compliance Code :
Compliant
Current Rating :
10A
DS Breakdown Voltage-Min :
900 V
Transistor Application :
SWITCHING
Published :
2003
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Package / Case :
TO-247-3
Base Product Number :
IXFH10
Power Dissipation-Max (Abs) :
300 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Fall Time (Typ) :
18 ns
Operating Temperature :
-55°C~150°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Rise Time :
12ns
Pin Count :
3
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Power Dissipation Ambient-Max :
300 W
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Power Dissipation-Max :
300W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Series :
HiPerFET™
JEDEC-95 Code :
TO-247AD
Polarity/Channel Type :
N-Channel
Qualification Status :
Not Qualified
Power Dissipation :
300W
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 25V
RoHS Status :
RoHS Compliant
Voltage - Rated DC :
900V
Continuous Drain Current (ID) :
10A
Case Connection :
DRAIN
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
10 A
Drain to Source Breakdown Voltage :
900V
Package Shape :
RECTANGULAR
FET Feature :
--
Mount :
Through Hole
JESD-30 Code :
R-PSFM-T3
Terminal Form :
THROUGH-HOLE
Turn-Off Delay Time :
51 ns
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N90 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFH10N90 pinout, IXFH10N90 datasheet PDF, IXFH10N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH10N90


N-Channel Tube 1.1 Ω @ 5A, 10V ±20V 4200pF @ 25V 155nC @ 10V 900V TO-247-3

IXFH10N90 Overview


The maximum input capacitance of this device is 4200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 10A.When VGS=900V, and ID flows to VDS at 900VVDS, the drain-source breakdown voltage is 900V in this device.As shown in the table below, the drain current of this device is 10 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH10N90 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 40A.
a 900V drain to source voltage (Vdss)


IXFH10N90 Applications


There are a lot of IXYS
IXFH10N90 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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