IXFH10N100P
- Mfr.Part #
- IXFH10N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 10A TO247AD
- Stock
- 30,179
- In Stock :
- 30,179
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Continuous Drain Current Id :
- 10A
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- N-Channel
- Package / Case :
- TO-247-3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Published :
- 2008
- Product Category :
- MOSFET
- FET Type :
- N-Channel
- Power Dissipation :
- 380W
- Package :
- Tube
- Factory Lead Time :
- 30 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification :
- -
- FET Feature :
- --
- Packaging :
- Tube
- Transistor Type :
- 1 N-Channel
- Tradename :
- HiPerFET
- DS Breakdown Voltage-Min :
- 1000V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Manufacturer :
- IXYS
- Base Product Number :
- IXFH10
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Number of Terminals :
- 3
- Case Connection :
- DRAIN
- Rds On Max :
- 1.4 Ω
- Length :
- 16.26 mm
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 380 W
- Additional Feature :
- AVALANCHE RATED
- Type :
- Polar HiPerFET Power MOSFET
- Pulsed Drain Current-Max (IDM) :
- 25A
- Rise Time :
- 45 ns
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 1.4 Ω
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 380W (Tc)
- Channel Type :
- N Channel
- Power Dissipation-Max :
- 380W Tc
- Max Power Dissipation :
- 380 W
- Terminal Position :
- Single
- Series :
- HiPerFET™, PolarP2™
- Pbfree Code :
- yes
- Number of Elements :
- 1
- RoHS :
- Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- JESD-609 Code :
- e1
- Supplier Device Package :
- TO-247AD (IXFH)
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 10A
- Width :
- 5.3 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3030pF @ 25V
- Brand :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 10 A
- Height :
- 21.46 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- THROUGH-HOLE
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Mounting Style :
- Through Hole
- JEDEC-95 Code :
- TO-247
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 1000V
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Number of Terminations :
- 3
- Input Capacitance :
- 3.03 nF
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 5A, 10V
- Datasheets
- IXFH10N100P

N-Channel Tube 1.4 Ω @ 5A, 10V ±30V 3030pF @ 25V 56nC @ 10V 1000V TO-247-3
IXFH10N100P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3030pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Peak drain current is 25A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 1000V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH10N100P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
based on its rated peak drain current 25A.
a 1000V drain to source voltage (Vdss)
IXFH10N100P Applications
There are a lot of IXYS
IXFH10N100P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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