IXFH10N100P

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Mfr.Part #
IXFH10N100P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 1000V 10A TO247AD
Stock
30,179
In Stock :
30,179

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Vgs(th) (Max) @ Id :
6.5V @ 1mA
Continuous Drain Current Id :
10A
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
N-Channel
Package / Case :
TO-247-3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±30V
Pin Count :
3
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Published :
2008
Product Category :
MOSFET
FET Type :
N-Channel
Power Dissipation :
380W
Package :
Tube
Factory Lead Time :
30 Weeks
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification :
-
FET Feature :
--
Packaging :
Tube
Transistor Type :
1 N-Channel
Tradename :
HiPerFET
DS Breakdown Voltage-Min :
1000V
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Product Type :
MOSFET
Manufacturer :
IXYS
Base Product Number :
IXFH10
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Number of Terminals :
3
Case Connection :
DRAIN
Rds On Max :
1.4 Ω
Length :
16.26 mm
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
380 W
Additional Feature :
AVALANCHE RATED
Type :
Polar HiPerFET Power MOSFET
Pulsed Drain Current-Max (IDM) :
25A
Rise Time :
45 ns
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
1.4 Ω
Number of Channels :
1 Channel
Power Dissipation (Max) :
380W (Tc)
Channel Type :
N Channel
Power Dissipation-Max :
380W Tc
Max Power Dissipation :
380 W
Terminal Position :
Single
Series :
HiPerFET™, PolarP2™
Pbfree Code :
yes
Number of Elements :
1
RoHS :
Compliant
Current - Continuous Drain (Id) @ 25°C :
10A Tc
JESD-609 Code :
e1
Supplier Device Package :
TO-247AD (IXFH)
Operating Mode :
ENHANCEMENT MODE
Maximum Operating Temperature :
+ 150 C
Continuous Drain Current (ID) :
10A
Width :
5.3 mm
Input Capacitance (Ciss) (Max) @ Vds :
3030pF @ 25V
Brand :
IXYS
Drain Current-Max (Abs) (ID) :
10 A
Height :
21.46 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Mounting Style :
Through Hole
JEDEC-95 Code :
TO-247
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
1000V
Channel Mode :
Enhancement
Avalanche Energy Rating (Eas) :
500 mJ
Number of Terminations :
3
Input Capacitance :
3.03 nF
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 5A, 10V
Datasheets
IXFH10N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N100P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Type:Polar HiPerFET Power MOSFET, Number of Channels:1 Channel, Number of Terminations:3, IXFH10N100P pinout, IXFH10N100P datasheet PDF, IXFH10N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH10N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH10N100P


N-Channel Tube 1.4 Ω @ 5A, 10V ±30V 3030pF @ 25V 56nC @ 10V 1000V TO-247-3

IXFH10N100P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3030pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Peak drain current is 25A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 1000V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH10N100P Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
based on its rated peak drain current 25A.
a 1000V drain to source voltage (Vdss)


IXFH10N100P Applications


There are a lot of IXYS
IXFH10N100P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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