IXFH110N25T

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Mfr.Part #
IXFH110N25T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 110A TO247AD
Stock
245
In Stock :
245

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Number of Terminals :
3
RoHS :
Compliant
Polarity/Channel Type :
N-Channel
Brand :
IXYS
Package / Case :
TO-247-3
Power Dissipation-Max (Abs) :
694 W
Product Status :
Active
Mounting Style :
Through Hole
Product Type :
MOSFET
Published :
2012
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Drain-source On Resistance-Max :
0.024Ohm
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
694 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS
Number of Terminations :
3
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
1000 mJ
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
ECCN Code :
EAR99
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On Max :
24 mΩ
Transistor Element Material :
SILICON
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 10V
Pin Count :
3
Maximum Operating Temperature :
+ 175 C
FET Type :
N-Channel
Power Dissipation-Max :
694W Tc
Package :
Tube
Series :
TrenchHV™
Supplier Device Package :
TO-247AD (IXFH)
Factory Lead Time :
30 Weeks
Power Dissipation (Max) :
694W (Tc)
Continuous Drain Current (ID) :
110A
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Surface Mount :
No
Pbfree Code :
yes
Input Capacitance :
9.4 nF
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-247AD
Additional Feature :
AVALANCHE RATED
Number of Channels :
1 Channel
DS Breakdown Voltage-Min :
250V
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Voltage (Vdss) :
250V
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
300A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Channel Mode :
Enhancement
Drain Current-Max (Abs) (ID) :
110 A
JESD-609 Code :
e1
FET Feature :
-
Terminal Form :
THROUGH-HOLE
Tradename :
HiPerFET
Transistor Type :
1 N-Channel
Terminal Position :
Single
Minimum Operating Temperature :
- 55 C
Vgs (Max) :
±20V
Transistor Polarity :
N-Channel
Base Product Number :
IXFH110
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, IXFH110N25T pinout, IXFH110N25T datasheet PDF, IXFH110N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N25T


N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V TO-247-3

IXFH110N25T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH110N25T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300A.
a 250V drain to source voltage (Vdss)


IXFH110N25T Applications


There are a lot of IXYS
IXFH110N25T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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