IXFH110N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Drain Current-Max (Abs) (ID) :

110 A

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

250V

Number of Terminations :

3

Channel Mode :

Enhancement

Product Status :

Active

Packaging :

Tube

Factory Lead Time :

30 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Power Dissipation (Max) :

694W (Tc)

Rds On (Max) @ Id, Vgs :

24m Ω @ 55A, 10V

Supplier Device Package :

TO-247AD (IXFH)

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

300A

Published :

2012

Base Product Number :

IXFH110

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminals :

3

Polarity/Channel Type :

N-Channel

Mounting Style :

Through Hole

FET Feature :

-

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

157nC @ 10V

Number of Elements :

1

Max Power Dissipation :

694 W

Continuous Drain Current (ID) :

110A

Product Category :

MOSFET

Mount :

Through Hole

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

250V

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Input Capacitance :

9.4 nF

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

1000 mJ

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Brand :

IXYS

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.024Ohm

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Rds On Max :

24 mΩ

RoHS :

Compliant

Package / Case :

TO-247-3

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Product Type :

MOSFET

Pin Count :

3

Maximum Operating Temperature :

+ 175 C

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max (Abs) :

694 W

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Surface Mount :

No

Tradename :

HiPerFET

RoHS Status :

ROHS3 Compliant

Terminal Form :

THROUGH-HOLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

TrenchHV™

JEDEC-95 Code :

TO-247AD

Manufacturer :

IXYS

Power Dissipation-Max :

694W Tc

Terminal Position :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V