IXFH110N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-247-3

Continuous Drain Current (ID) :

110A

Drain-source On Resistance-Max :

0.024Ohm

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Transistor Type :

1 N-Channel

DS Breakdown Voltage-Min :

250V

Package Shape :

RECTANGULAR

Max Power Dissipation :

694 W

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Package :

Tube

FET Feature :

-

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Maximum Operating Temperature :

+ 175 C

Qualification Status :

Not Qualified

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

157nC @ 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Channels :

1 Channel

Rds On Max :

24 mΩ

Factory Lead Time :

30 Weeks

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Power Dissipation (Max) :

694W (Tc)

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

300A

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

24m Ω @ 55A, 10V

Terminal Form :

THROUGH-HOLE

Tradename :

HiPerFET

RoHS :

Compliant

Channel Mode :

Enhancement

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

Input Capacitance :

9.4 nF

Product Type :

MOSFET

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-247AD (IXFH)

Mount :

Through Hole

Mounting Style :

Through Hole

Avalanche Energy Rating (Eas) :

1000 mJ

Transistor Application :

SWITCHING

Manufacturer :

IXYS

JEDEC-95 Code :

TO-247AD

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Drain Current-Max (Abs) (ID) :

110 A

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

250V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Series :

TrenchHV™

Brand :

IXYS

Surface Mount :

No

Number of Elements :

1

Power Dissipation-Max :

694W Tc

Number of Terminations :

3

Product Status :

Active

Power Dissipation-Max (Abs) :

694 W

JESD-30 Code :

R-PSFM-T3

Base Product Number :

IXFH110