IXFH110N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 175 C

Supplier Device Package :

TO-247AD (IXFH)

Rds On (Max) @ Id, Vgs :

24m Ω @ 55A, 10V

Published :

2012

Terminal Form :

THROUGH-HOLE

Input Capacitance :

9.4 nF

Manufacturer :

IXYS

Max Power Dissipation :

694 W

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

157nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Base Product Number :

IXFH110

Avalanche Energy Rating (Eas) :

1000 mJ

Package :

Tube

FET Feature :

-

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Transistor Polarity :

N-Channel

Product Category :

MOSFET

Packaging :

Tube

Minimum Operating Temperature :

- 55 C

JESD-609 Code :

e1

Drain Current-Max (Abs) (ID) :

110 A

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Transistor Type :

1 N-Channel

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

250V

JEDEC-95 Code :

TO-247AD

Reach Compliance Code :

Compliant

Pin Count :

3

Case Connection :

DRAIN

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

RoHS :

Compliant

ECCN Code :

EAR99

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Mount :

Through Hole

Series :

TrenchHV™

Power Dissipation-Max :

694W Tc

Terminal Position :

Single

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Pbfree Code :

yes

Product Type :

MOSFET

Brand :

IXYS

Factory Lead Time :

30 Weeks

Drain to Source Voltage (Vdss) :

250V

Drain-source On Resistance-Max :

0.024Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

300A

RoHS Status :

ROHS3 Compliant

Tradename :

HiPerFET

Number of Terminals :

3

Power Dissipation-Max (Abs) :

694 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Rds On Max :

24 mΩ

Power Dissipation (Max) :

694W (Tc)

Continuous Drain Current (ID) :

110A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

Through Hole

Package / Case :

TO-247-3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Number of Elements :

1