IXFH110N25T

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Mfr.Part #
IXFH110N25T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 110A TO247AD
Stock
245
In Stock :
245

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Input Capacitance :
9.4 nF
Maximum Operating Temperature :
+ 175 C
Operating Mode :
ENHANCEMENT MODE
Transistor Polarity :
N-Channel
Surface Mount :
No
Product Type :
MOSFET
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS :
Compliant
Manufacturer :
IXYS
Vgs (Max) :
±20V
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
FET Type :
N-Channel
Mounting Style :
Through Hole
Terminal Form :
THROUGH-HOLE
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
694W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
110 A
Configuration :
SINGLE WITH BUILT-IN DIODE
Reach Compliance Code :
Compliant
Number of Terminations :
3
Number of Terminals :
3
Packaging :
Tube
JEDEC-95 Code :
TO-247AD
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Supplier Device Package :
TO-247AD (IXFH)
Transistor Type :
1 N-Channel
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Rds On Max :
24 mΩ
Factory Lead Time :
30 Weeks
Case Connection :
DRAIN
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
250V
Drain to Source Voltage (Vdss) :
250V
Terminal Position :
Single
Max Power Dissipation :
694 W
Base Product Number :
IXFH110
Avalanche Energy Rating (Eas) :
1000 mJ
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Power Dissipation-Max (Abs) :
694 W
Number of Channels :
1 Channel
JESD-609 Code :
e1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Brand :
IXYS
Continuous Drain Current (ID) :
110A
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
Number of Elements :
1
Mount :
Through Hole
Pbfree Code :
yes
Transistor Element Material :
SILICON
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.024Ohm
RoHS Status :
ROHS3 Compliant
FET Feature :
-
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
300A
Package / Case :
TO-247-3
Polarity/Channel Type :
N-Channel
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
694W (Tc)
Series :
TrenchHV™
Tradename :
HiPerFET
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 10V
Product Category :
MOSFET
Published :
2012
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, IXFH110N25T pinout, IXFH110N25T datasheet PDF, IXFH110N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N25T


N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V TO-247-3

IXFH110N25T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH110N25T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300A.
a 250V drain to source voltage (Vdss)


IXFH110N25T Applications


There are a lot of IXYS
IXFH110N25T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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