IXFH110N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

JEDEC-95 Code :

TO-247AD

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Input Capacitance :

9.4 nF

DS Breakdown Voltage-Min :

250V

Product Status :

Active

Channel Mode :

Enhancement

Tradename :

HiPerFET

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

157nC @ 10V

RoHS :

Compliant

ECCN Code :

EAR99

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 175 C

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

300A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Type :

1 N-Channel

Power Dissipation-Max :

694W Tc

Base Product Number :

IXFH110

Additional Feature :

AVALANCHE RATED

Supplier Device Package :

TO-247AD (IXFH)

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Qualification Status :

Not Qualified

Rds On Max :

24 mΩ

Number of Terminals :

3

Rds On (Max) @ Id, Vgs :

24m Ω @ 55A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

250V

Continuous Drain Current (ID) :

110A

JESD-609 Code :

e1

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

1000 mJ

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

Product Type :

MOSFET

Published :

2012

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.024Ohm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Series :

TrenchHV™

Pin Count :

3

Number of Terminations :

3

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

30 Weeks

Transistor Polarity :

N-Channel

Package :

Tube

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Brand :

IXYS

Number of Elements :

1

FET Feature :

-

Drain Current-Max (Abs) (ID) :

110 A

Max Power Dissipation :

694 W

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Style :

Through Hole

Reach Compliance Code :

Compliant

Power Dissipation-Max (Abs) :

694 W

Power Dissipation (Max) :

694W (Tc)