IXFH110N25T

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Mfr.Part #
IXFH110N25T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 110A TO247AD
Stock
245
In Stock :
245

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Drain to Source Voltage (Vdss) :
250V
Operating Temperature :
-55°C~150°C TJ
Tradename :
HiPerFET
Drain-source On Resistance-Max :
0.024Ohm
Transistor Element Material :
SILICON
Max Power Dissipation :
694 W
Qualification Status :
Not Qualified
Product Status :
Active
Number of Terminals :
3
RoHS :
Compliant
Channel Mode :
Enhancement
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Number of Channels :
1 Channel
JESD-609 Code :
e1
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
TrenchHV™
Factory Lead Time :
30 Weeks
Power Dissipation-Max (Abs) :
694 W
Continuous Drain Current (ID) :
110A
ECCN Code :
EAR99
Package / Case :
TO-247-3
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
300A
FET Type :
N-Channel
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
110 A
Rds On Max :
24 mΩ
Manufacturer :
IXYS
Published :
2012
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Terminal Position :
Single
Power Dissipation (Max) :
694W (Tc)
Number of Elements :
1
Supplier Device Package :
TO-247AD (IXFH)
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Brand :
IXYS
Product Category :
MOSFET
Case Connection :
DRAIN
FET Feature :
-
Additional Feature :
AVALANCHE RATED
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
1000 mJ
Minimum Operating Temperature :
- 55 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Terminal Form :
THROUGH-HOLE
JEDEC-95 Code :
TO-247AD
Mounting Style :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
DS Breakdown Voltage-Min :
250V
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Pin Count :
3
Product Type :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Base Product Number :
IXFH110
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Input Capacitance :
9.4 nF
Reach Compliance Code :
Compliant
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
694W Tc
Package :
Tube
Mount :
Through Hole
Maximum Operating Temperature :
+ 175 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, IXFH110N25T pinout, IXFH110N25T datasheet PDF, IXFH110N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N25T


N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V TO-247-3

IXFH110N25T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH110N25T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300A.
a 250V drain to source voltage (Vdss)


IXFH110N25T Applications


There are a lot of IXYS
IXFH110N25T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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