IXFH110N25T
- Mfr.Part #
- IXFH110N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 110A TO247AD
- Stock
- 245
- In Stock :
- 245
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Maximum Operating Temperature :
- + 175 C
- Supplier Device Package :
- TO-247AD (IXFH)
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- Published :
- 2012
- Terminal Form :
- THROUGH-HOLE
- Input Capacitance :
- 9.4 nF
- Manufacturer :
- IXYS
- Max Power Dissipation :
- 694 W
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Base Product Number :
- IXFH110
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Package :
- Tube
- FET Feature :
- -
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Packaging :
- Tube
- Minimum Operating Temperature :
- - 55 C
- JESD-609 Code :
- e1
- Drain Current-Max (Abs) (ID) :
- 110 A
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 250V
- JEDEC-95 Code :
- TO-247AD
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Compliant
- ECCN Code :
- EAR99
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Mount :
- Through Hole
- Series :
- TrenchHV™
- Power Dissipation-Max :
- 694W Tc
- Terminal Position :
- Single
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Product Type :
- MOSFET
- Brand :
- IXYS
- Factory Lead Time :
- 30 Weeks
- Drain to Source Voltage (Vdss) :
- 250V
- Drain-source On Resistance-Max :
- 0.024Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 300A
- RoHS Status :
- ROHS3 Compliant
- Tradename :
- HiPerFET
- Number of Terminals :
- 3
- Power Dissipation-Max (Abs) :
- 694 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Rds On Max :
- 24 mΩ
- Power Dissipation (Max) :
- 694W (Tc)
- Continuous Drain Current (ID) :
- 110A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Number of Elements :
- 1
- Datasheets
- IXFH110N25T
IXFH110N25T Documents

N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V TO-247-3
IXFH110N25T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH110N25T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300A.
a 250V drain to source voltage (Vdss)
IXFH110N25T Applications
There are a lot of IXYS
IXFH110N25T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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