IXFH110N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-247AD (IXFH)

Tradename :

HiPerFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

110 A

RoHS :

Compliant

JEDEC-95 Code :

TO-247AD

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Base Product Number :

IXFH110

Transistor Element Material :

SILICON

FET Feature :

-

Package / Case :

TO-247-3

Brand :

IXYS

Series :

TrenchHV™

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

694W (Tc)

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Number of Elements :

1

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

1000 mJ

Drain to Source Voltage (Vdss) :

250V

Rds On (Max) @ Id, Vgs :

24m Ω @ 55A, 10V

Rds On Max :

24 mΩ

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Power Dissipation-Max :

694W Tc

Operating Mode :

ENHANCEMENT MODE

Maximum Operating Temperature :

+ 175 C

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Factory Lead Time :

30 Weeks

Number of Channels :

1 Channel

Terminal Position :

Single

Case Connection :

DRAIN

Surface Mount :

No

Package :

Tube

Continuous Drain Current (ID) :

110A

Number of Terminals :

3

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2012

Product Status :

Active

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Input Capacitance :

9.4 nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

IXYS

Product Type :

MOSFET

Max Power Dissipation :

694 W

Channel Mode :

Enhancement

Drain-source On Resistance-Max :

0.024Ohm

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

157nC @ 10V

Polarity/Channel Type :

N-Channel

Mounting Style :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

DS Breakdown Voltage-Min :

250V

Power Dissipation-Max (Abs) :

694 W

Pin Count :

3

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

300A