IXFH110N25T

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Mfr.Part #
IXFH110N25T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 110A TO247AD
Stock
245
In Stock :
245

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
250V
Manufacturer :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
Drain Current-Max (Abs) (ID) :
110 A
Brand :
IXYS
Power Dissipation (Max) :
694W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 10V
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
TO-247AD (IXFH)
Published :
2012
Drain to Source Voltage (Vdss) :
250V
Transistor Polarity :
N-Channel
Transistor Type :
1 N-Channel
Transistor Element Material :
SILICON
Product Status :
Active
Number of Terminations :
3
FET Type :
N-Channel
Factory Lead Time :
30 Weeks
ECCN Code :
EAR99
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
Pulsed Drain Current-Max (IDM) :
300A
Max Power Dissipation :
694 W
Mounting Style :
Through Hole
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
110A
Additional Feature :
AVALANCHE RATED
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Product Type :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Reach Compliance Code :
Compliant
Power Dissipation-Max (Abs) :
694 W
Operating Temperature :
-55°C~150°C TJ
Tradename :
HiPerFET
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
0.024Ohm
Package Shape :
RECTANGULAR
FET Feature :
-
Maximum Operating Temperature :
+ 175 C
JESD-30 Code :
R-PSFM-T3
JESD-609 Code :
e1
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-247AD
Mounting Type :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
RoHS :
Compliant
Pin Count :
3
Vgs (Max) :
±20V
Number of Channels :
1 Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
TrenchHV™
Package / Case :
TO-247-3
Packaging :
Tube
Input Capacitance :
9.4 nF
Rds On Max :
24 mΩ
Mount :
Through Hole
Base Product Number :
IXFH110
Package :
Tube
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Number of Elements :
1
Power Dissipation-Max :
694W Tc
Avalanche Energy Rating (Eas) :
1000 mJ
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Datasheets
IXFH110N25T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-247-3, IXFH110N25T pinout, IXFH110N25T datasheet PDF, IXFH110N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N25T


N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V TO-247-3

IXFH110N25T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH110N25T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300A.
a 250V drain to source voltage (Vdss)


IXFH110N25T Applications


There are a lot of IXYS
IXFH110N25T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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