IXFH110N25T

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Mfr.Part #
IXFH110N25T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 110A TO247AD
Stock
245
In Stock :
245

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
30 Weeks
Package / Case :
TO-247-3
DS Breakdown Voltage-Min :
250V
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Mount :
Through Hole
Transistor Type :
1 N-Channel
Drain to Source Voltage (Vdss) :
250V
Product Category :
MOSFET
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
300A
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 10V
Channel Mode :
Enhancement
Package :
Tube
Vgs (Max) :
±20V
Terminal Position :
Single
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Minimum Operating Temperature :
- 55 C
Continuous Drain Current (ID) :
110A
RoHS :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Base Product Number :
IXFH110
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Power Dissipation-Max :
694W Tc
Additional Feature :
AVALANCHE RATED
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Surface Mount :
No
Package Shape :
RECTANGULAR
Supplier Device Package :
TO-247AD (IXFH)
Drain-source On Resistance-Max :
0.024Ohm
Manufacturer :
IXYS
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Input Capacitance :
9.4 nF
Power Dissipation (Max) :
694W (Tc)
Pbfree Code :
yes
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Published :
2012
Pin Count :
3
Product Type :
MOSFET
Mounting Type :
Through Hole
Polarity/Channel Type :
N-Channel
Transistor Polarity :
N-Channel
Reach Compliance Code :
Compliant
Avalanche Energy Rating (Eas) :
1000 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
FET Feature :
-
Product Status :
Active
JESD-30 Code :
R-PSFM-T3
Maximum Operating Temperature :
+ 175 C
Max Power Dissipation :
694 W
JESD-609 Code :
e1
Rds On Max :
24 mΩ
Brand :
IXYS
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-247AD
FET Type :
N-Channel
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Drain Current-Max (Abs) (ID) :
110 A
Power Dissipation-Max (Abs) :
694 W
Tradename :
HiPerFET
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
TrenchHV™
Mounting Style :
Through Hole
Number of Terminals :
3
Datasheets
IXFH110N25T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFH110N25T pinout, IXFH110N25T datasheet PDF, IXFH110N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N25T


N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V TO-247-3

IXFH110N25T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH110N25T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300A.
a 250V drain to source voltage (Vdss)


IXFH110N25T Applications


There are a lot of IXYS
IXFH110N25T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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