IXFH110N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

TrenchHV™

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

Product Category :

MOSFET

Qualification Status :

Not Qualified

Mount :

Through Hole

Input Capacitance :

9.4 nF

Package / Case :

TO-247-3

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Channel Mode :

Enhancement

Continuous Drain Current (ID) :

110A

Package Shape :

RECTANGULAR

FET Feature :

-

Power Dissipation (Max) :

694W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

110 A

Packaging :

Tube

Case Connection :

DRAIN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

694 W

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

300A

RoHS :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Surface Mount :

No

Mounting Type :

Through Hole

Transistor Polarity :

N-Channel

Published :

2012

Product Type :

MOSFET

Maximum Operating Temperature :

+ 175 C

Number of Elements :

1

Tradename :

HiPerFET

Gate Charge (Qg) (Max) @ Vgs :

157nC @ 10V

Number of Terminals :

3

Number of Channels :

1 Channel

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

24m Ω @ 55A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

DS Breakdown Voltage-Min :

250V

Max Power Dissipation :

694 W

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Base Product Number :

IXFH110

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Drain-source On Resistance-Max :

0.024Ohm

Terminal Form :

THROUGH-HOLE

Transistor Type :

1 N-Channel

Supplier Device Package :

TO-247AD (IXFH)

Factory Lead Time :

30 Weeks

JEDEC-95 Code :

TO-247AD

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

1000 mJ

Operating Mode :

ENHANCEMENT MODE

Rds On Max :

24 mΩ

Mounting Style :

Through Hole

FET Type :

N-Channel

Brand :

IXYS

Power Dissipation-Max :

694W Tc

Drain to Source Voltage (Vdss) :

250V

JESD-609 Code :

e1

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Compliant