IXFH110N25T

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Mfr.Part #
IXFH110N25T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 110A TO247AD
Stock
245
In Stock :
245

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Number of Terminals :
3
Series :
TrenchHV™
ECCN Code :
EAR99
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Base Product Number :
IXFH110
Rds On (Max) @ Id, Vgs :
24m Ω @ 55A, 10V
Reach Compliance Code :
Compliant
Package / Case :
TO-247-3
Mounting Style :
Through Hole
Max Power Dissipation :
694 W
Transistor Type :
1 N-Channel
Manufacturer :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Pulsed Drain Current-Max (IDM) :
300A
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 175 C
Continuous Drain Current (ID) :
110A
Qualification Status :
Not Qualified
Power Dissipation-Max (Abs) :
694 W
RoHS :
Compliant
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
110A Tc
JEDEC-95 Code :
TO-247AD
Transistor Element Material :
SILICON
Tradename :
HiPerFET
Product Category :
MOSFET
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e1
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
250V
Mounting Type :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-247AD (IXFH)
Drain-source On Resistance-Max :
0.024Ohm
Channel Mode :
Enhancement
Published :
2012
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Brand :
IXYS
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
Transistor Polarity :
N-Channel
Factory Lead Time :
30 Weeks
Product Status :
Active
Pbfree Code :
yes
Input Capacitance :
9.4 nF
Vgs (Max) :
±20V
FET Feature :
-
Minimum Operating Temperature :
- 55 C
DS Breakdown Voltage-Min :
250V
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
1000 mJ
Rds On Max :
24 mΩ
Package Shape :
RECTANGULAR
Mount :
Through Hole
Power Dissipation-Max :
694W Tc
Drain Current-Max (Abs) (ID) :
110 A
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
694W (Tc)
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 10V
FET Type :
N-Channel
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFH110N25T pinout, IXFH110N25T datasheet PDF, IXFH110N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH110N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH110N25T


N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V TO-247-3

IXFH110N25T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH110N25T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300A.
a 250V drain to source voltage (Vdss)


IXFH110N25T Applications


There are a lot of IXYS
IXFH110N25T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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