IXFH110N25T
- Mfr.Part #
- IXFH110N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 110A TO247AD
- Stock
- 245
- In Stock :
- 245
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- Channel Mode :
- Enhancement
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-247AD
- Continuous Drain Current (ID) :
- 110A
- Power Dissipation (Max) :
- 694W (Tc)
- Pin Count :
- 3
- Published :
- 2012
- Brand :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Product Status :
- Active
- Terminal Position :
- Single
- Factory Lead Time :
- 30 Weeks
- Manufacturer :
- IXYS
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.024Ohm
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 175 C
- Transistor Type :
- 1 N-Channel
- Package / Case :
- TO-247-3
- Tradename :
- HiPerFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Series :
- TrenchHV™
- Polarity/Channel Type :
- N-Channel
- Max Power Dissipation :
- 694 W
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 300A
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFH110
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 250V
- ECCN Code :
- EAR99
- RoHS :
- Compliant
- Package Shape :
- RECTANGULAR
- FET Feature :
- -
- Supplier Device Package :
- TO-247AD (IXFH)
- Product Category :
- MOSFET
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 694 W
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 250V
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Input Capacitance :
- 9.4 nF
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 110 A
- Power Dissipation-Max :
- 694W Tc
- Rds On Max :
- 24 mΩ
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Datasheets
- IXFH110N25T

N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V TO-247-3
IXFH110N25T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH110N25T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300A.
a 250V drain to source voltage (Vdss)
IXFH110N25T Applications
There are a lot of IXYS
IXFH110N25T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















