IXFH110N25T
- Mfr.Part #
- IXFH110N25T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 110A TO247AD
- Stock
- 245
- In Stock :
- 245
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Drain to Source Voltage (Vdss) :
- 250V
- Operating Temperature :
- -55°C~150°C TJ
- Tradename :
- HiPerFET
- Drain-source On Resistance-Max :
- 0.024Ohm
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 694 W
- Qualification Status :
- Not Qualified
- Product Status :
- Active
- Number of Terminals :
- 3
- RoHS :
- Compliant
- Channel Mode :
- Enhancement
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 55A, 10V
- Number of Channels :
- 1 Channel
- JESD-609 Code :
- e1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- TrenchHV™
- Factory Lead Time :
- 30 Weeks
- Power Dissipation-Max (Abs) :
- 694 W
- Continuous Drain Current (ID) :
- 110A
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 300A
- FET Type :
- N-Channel
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 110 A
- Rds On Max :
- 24 mΩ
- Manufacturer :
- IXYS
- Published :
- 2012
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 694W (Tc)
- Number of Elements :
- 1
- Supplier Device Package :
- TO-247AD (IXFH)
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Brand :
- IXYS
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- FET Feature :
- -
- Additional Feature :
- AVALANCHE RATED
- Transistor Type :
- 1 N-Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Minimum Operating Temperature :
- - 55 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- JEDEC-95 Code :
- TO-247AD
- Mounting Style :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 250V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFH110
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Input Capacitance :
- 9.4 nF
- Reach Compliance Code :
- Compliant
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 694W Tc
- Package :
- Tube
- Mount :
- Through Hole
- Maximum Operating Temperature :
- + 175 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXFH110N25T
IXFH110N25T Documents

N-Channel Tube 24m Ω @ 55A, 10V ±20V 9400pF @ 25V 157nC @ 10V 250V TO-247-3
IXFH110N25T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 110A, which represents the maximum continuous current it can conduct.In this device, the drain current is 110 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH110N25T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 300A.
a 250V drain to source voltage (Vdss)
IXFH110N25T Applications
There are a lot of IXYS
IXFH110N25T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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