IXFH120N15P

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Mfr.Part #
IXFH120N15P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 120A TO247AD
Stock
60
In Stock :
60

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Box
Pulsed Drain Current-Max (IDM) :
260A
Transistor Element Material :
SILICON
Rise Time :
42ns
Qualification Status :
Not Qualified
Number of Elements per Chip :
1
Height :
21.46mm
Surface Mount :
No
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Turn-Off Delay Time :
85 ns
JESD-609 Code :
e1
Package Shape :
RECTANGULAR
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
4900pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
600W (Tc)
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
600W Tc
Reach Compliance Code :
Unknown
FET Feature :
--
Terminal Form :
THROUGH-HOLE
Tradename :
HiPerFET
Drain to Source Breakdown Voltage :
150V
Mounting Style :
Through Hole
Transistor Type :
1 N-Channel
Package Type :
TO-247AD
Manufacturer :
IXYS
Continuous Drain Current (ID) :
120A
Fall Time (Typ) :
26 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Brand :
IXYS
Number of Pins :
3
Width :
5.3mm
Product Status :
Active
Published :
2006
Channel Mode :
Enhancement
Product Category :
MOSFET
ECCN Code :
EAR99
JEDEC-95 Code :
TO-247AD
Transistor Application :
SWITCHING
Number of Channels :
1 Channel
Number of Terminations :
3
Supplier Device Package :
TO-247AD (IXFH)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
5V @ 4mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Pin Count :
3
Length :
16.26mm
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Operating Mode :
ENHANCEMENT MODE
Channel Type :
N
Element Configuration :
Single
Product Type :
MOSFET
Operating Temperature :
-55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.016Ohm
Rds On (Max) @ Id, Vgs :
16m Ω @ 500mA, 10V
REACH SVHC :
No SVHC
Case Connection :
DRAIN
Configuration :
Single
Turn On Delay Time :
33 ns
Number of Terminals :
3
RoHS :
Details
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Packaging :
Tube
DS Breakdown Voltage-Min :
150 V
Maximum Operating Temperature :
+175 °C
Subcategory :
MOSFETs
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
PolarHT™ HiPerFET™
Package / Case :
TO-247-3
Avalanche Energy Rating (Eas) :
2000 mJ
Drain to Source Voltage (Vdss) :
150V
Base Product Number :
IXFH120
Minimum Operating Temperature :
-55 °C
Power Dissipation :
600W
Gate to Source Voltage (Vgs) :
20V
Threshold Voltage :
5V
Additional Feature :
AVALANCHE ENERGY RATED
Mount :
Through Hole
Datasheets
IXFH120N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N15P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, IXFH120N15P pinout, IXFH120N15P datasheet PDF, IXFH120N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH120N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH120N15P


N-Channel Tube 16m Ω @ 500mA, 10V ±20V 4900pF @ 25V 150nC @ 10V 150V TO-247-3

IXFH120N15P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 85 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 260A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 33 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150 V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH120N15P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 260A.
a threshold voltage of 5V
a 150V drain to source voltage (Vdss)


IXFH120N15P Applications


There are a lot of IXYS
IXFH120N15P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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