IXFH96N20P
- Mfr.Part #
- IXFH96N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 96A TO247AD
- Stock
- 18
- In Stock :
- 18
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Turn-Off Delay Time :
- 75 ns
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2006
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Compliant
- Continuous Drain Current Id :
- 96A
- Length :
- 16.26mm
- Power Dissipation-Max :
- 600W Tc
- Number of Elements per Chip :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Power Dissipation :
- 600W
- Factory Lead Time :
- 20 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Subcategory :
- MOSFETs
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Maximum Operating Temperature :
- +175 °C
- Turn On Delay Time :
- 28 ns
- Transistor Element Material :
- SILICON
- Type :
- PolarHT HiPerFET Power MOSFET
- JEDEC-95 Code :
- TO-247AD
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.024 Ω
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- -55 °C
- JESD-609 Code :
- e1
- Gate to Source Voltage (Vgs) :
- 20V
- FET Feature :
- --
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 200V
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 96A
- Series :
- PolarHT™ HiPerFET™
- MSL :
- MSL 1 - Unlimited
- Qualification :
- -
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Rise Time :
- 30ns
- Pbfree Code :
- yes
- Mounting Style :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Channels :
- 1 Channel
- Tradename :
- HiPerFET
- Drain to Source Voltage (Vdss) :
- 200V
- Channel Mode :
- Enhancement
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 200 V
- Supplier Device Package :
- TO-247AD (IXFH)
- Resistance :
- 24mOhm
- Base Product Number :
- IXFH96
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- RoHS :
- Details
- Product Category :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Product Type :
- MOSFET
- Terminal Form :
- THROUGH-HOLE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Height :
- 21.46mm
- Power Dissipation (Max) :
- 600W (Tc)
- Width :
- 5.3mm
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 500mA, 10V
- Package Type :
- TO-247
- Channel Type :
- N Channel
- Number of Terminals :
- 3
- Brand :
- IXYS
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 225A
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Package :
- Box
- Transistor Polarity :
- N-Channel
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Fall Time (Typ) :
- 30 ns
- Manufacturer :
- IXYS
- Datasheets
- IXFH96N20P

N-Channel Tube 24m Ω @ 500mA, 10V ±20V 4800pF @ 25V 145nC @ 10V 200V TO-247-3
IXFH96N20P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 96A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 225A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH96N20P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 225A.
a 200V drain to source voltage (Vdss)
IXFH96N20P Applications
There are a lot of IXYS
IXFH96N20P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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