IXFH96N20P

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Mfr.Part #
IXFH96N20P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 96A TO247AD
Stock
18
In Stock :
18

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Surface Mount :
No
Turn-Off Delay Time :
75 ns
JESD-30 Code :
R-PSFM-T3
Published :
2006
Lead Free :
Lead Free
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Compliant
Continuous Drain Current Id :
96A
Length :
16.26mm
Power Dissipation-Max :
600W Tc
Number of Elements per Chip :
1
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Power Dissipation :
600W
Factory Lead Time :
20 Weeks
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Subcategory :
MOSFETs
Mount :
Through Hole
Number of Terminations :
3
Maximum Operating Temperature :
+175 °C
Turn On Delay Time :
28 ns
Transistor Element Material :
SILICON
Type :
PolarHT HiPerFET Power MOSFET
JEDEC-95 Code :
TO-247AD
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Drain-source On Resistance-Max :
0.024 Ω
Case Connection :
DRAIN
Minimum Operating Temperature :
-55 °C
JESD-609 Code :
e1
Gate to Source Voltage (Vgs) :
20V
FET Feature :
--
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Drain to Source Breakdown Voltage :
200V
Number of Pins :
3
Continuous Drain Current (ID) :
96A
Series :
PolarHT™ HiPerFET™
MSL :
MSL 1 - Unlimited
Qualification :
-
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±20V
Rise Time :
30ns
Pbfree Code :
yes
Mounting Style :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Tradename :
HiPerFET
Drain to Source Voltage (Vdss) :
200V
Channel Mode :
Enhancement
FET Type :
N-Channel
DS Breakdown Voltage-Min :
200 V
Supplier Device Package :
TO-247AD (IXFH)
Resistance :
24mOhm
Base Product Number :
IXFH96
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Package / Case :
TO-247-3
Vgs(th) (Max) @ Id :
5V @ 4mA
RoHS :
Details
Product Category :
MOSFET
Avalanche Energy Rating (Eas) :
1500 mJ
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Product Type :
MOSFET
Terminal Form :
THROUGH-HOLE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Height :
21.46mm
Power Dissipation (Max) :
600W (Tc)
Width :
5.3mm
Rds On (Max) @ Id, Vgs :
24m Ω @ 500mA, 10V
Package Type :
TO-247
Channel Type :
N Channel
Number of Terminals :
3
Brand :
IXYS
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
225A
ECCN Code :
EAR99
Pin Count :
3
Package :
Box
Transistor Polarity :
N-Channel
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Fall Time (Typ) :
30 ns
Manufacturer :
IXYS
Datasheets
IXFH96N20P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH96N20P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Type:PolarHT HiPerFET Power MOSFET, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, IXFH96N20P pinout, IXFH96N20P datasheet PDF, IXFH96N20P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH96N20P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH96N20P


N-Channel Tube 24m Ω @ 500mA, 10V ±20V 4800pF @ 25V 145nC @ 10V 200V TO-247-3

IXFH96N20P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 96A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 225A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200 V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH96N20P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 225A.
a 200V drain to source voltage (Vdss)


IXFH96N20P Applications


There are a lot of IXYS
IXFH96N20P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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