IXFH96N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature :

AVALANCHE ENERGY RATED

Transistor Type :

1 N-Channel

Reach Compliance Code :

Compliant

Lead Free :

Lead Free

RoHS :

Details

Number of Terminals :

3

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Pbfree Code :

yes

Maximum Operating Temperature :

+175 °C

Number of Elements :

1

Package / Case :

TO-247-3

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Length :

16.26mm

JESD-609 Code :

e1

Number of Channels :

1 Channel

Minimum Operating Temperature :

-55 °C

Product Category :

MOSFET

Manufacturer :

IXYS

Width :

5.3mm

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSFM-T3

Subcategory :

MOSFETs

Number of Elements per Chip :

1

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PolarHT™ HiPerFET™

Turn On Delay Time :

30 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Supplier Device Package :

TO-247AD (IXFH)

Turn-Off Delay Time :

66 ns

Mount :

Through Hole

Published :

2006

Package Shape :

RECTANGULAR

Base Product Number :

IXFH96

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

THROUGH-HOLE

Fall Time (Typ) :

18 ns

Rise Time :

33ns

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Factory Lead Time :

30 Weeks

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-247AD

Height :

21.46mm

Packaging :

Tube

Transistor Element Material :

SILICON

Number of Pins :

3

DS Breakdown Voltage-Min :

150 V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

96A

Element Configuration :

Single

Number of Terminations :

3

Package Type :

TO-247

Drain to Source Breakdown Voltage :

150V

Package :

Box

Vgs(th) (Max) @ Id :

5V @ 4mA

Power Dissipation (Max) :

480W (Tc)

Product Type :

MOSFET

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

24m Ω @ 500mA, 10V

Pin Count :

3

Drain-source On Resistance-Max :

0.024Ohm

Case Connection :

DRAIN

Channel Type :

N

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Configuration :

Single

Drain to Source Voltage (Vdss) :

150V

Power Dissipation :

480W

Brand :

IXYS

FET Feature :

--

Avalanche Energy Rating (Eas) :

1000 mJ

Surface Mount :

No

Tradename :

HiPerFET

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

250A

Power Dissipation-Max :

480W Tc