IXFH96N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

16.26mm

Number of Elements :

1

Drain-source On Resistance-Max :

0.024Ohm

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

150V

Gate to Source Voltage (Vgs) :

20V

Tradename :

HiPerFET

Surface Mount :

No

Base Product Number :

IXFH96

Rds On (Max) @ Id, Vgs :

24m Ω @ 500mA, 10V

Package / Case :

TO-247-3

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Mounting Style :

Through Hole

Configuration :

Single

Package :

Box

Package Shape :

RECTANGULAR

Product Status :

Active

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

250A

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+175 °C

Packaging :

Tube

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

66 ns

Number of Elements per Chip :

1

Terminal Form :

THROUGH-HOLE

Element Configuration :

Single

Terminal Position :

Single

Transistor Type :

1 N-Channel

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Turn On Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Height :

21.46mm

Continuous Drain Current (ID) :

96A

JESD-30 Code :

R-PSFM-T3

Supplier Device Package :

TO-247AD (IXFH)

Drain to Source Voltage (Vdss) :

150V

Transistor Element Material :

SILICON

Published :

2006

Channel Mode :

Enhancement

Number of Terminals :

3

Fall Time (Typ) :

18 ns

FET Type :

N-Channel

Additional Feature :

AVALANCHE ENERGY RATED

Power Dissipation-Max :

480W Tc

Case Connection :

DRAIN

Pbfree Code :

yes

Product Category :

MOSFET

Package Type :

TO-247

FET Feature :

--

Lead Free :

Lead Free

Factory Lead Time :

30 Weeks

Subcategory :

MOSFETs

Number of Channels :

1 Channel

Polarity/Channel Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Type :

MOSFET

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

JEDEC-95 Code :

TO-247AD

Power Dissipation :

480W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Minimum Operating Temperature :

-55 °C

Channel Type :

N

Rise Time :

33ns

Transistor Polarity :

N-Channel

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Power Dissipation (Max) :

480W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

Series :

PolarHT™ HiPerFET™

Brand :

IXYS

Width :

5.3mm

Avalanche Energy Rating (Eas) :

1000 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

DS Breakdown Voltage-Min :

150 V

Vgs(th) (Max) @ Id :

5V @ 4mA

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e1