IXFH96N15P

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Mfr.Part #
IXFH96N15P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 96A TO247AD
Stock
59,859
In Stock :
59,859

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e1
Product Type :
MOSFET
Drain to Source Voltage (Vdss) :
150V
Number of Channels :
1 Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.024Ohm
Avalanche Energy Rating (Eas) :
1000 mJ
DS Breakdown Voltage-Min :
150 V
Rds On (Max) @ Id, Vgs :
24m Ω @ 500mA, 10V
Minimum Operating Temperature :
-55 °C
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 25V
Mount :
Through Hole
Pin Count :
3
RoHS :
Details
Series :
PolarHT™ HiPerFET™
Fall Time (Typ) :
18 ns
Vgs(th) (Max) @ Id :
5V @ 4mA
Pulsed Drain Current-Max (IDM) :
250A
Pbfree Code :
yes
Packaging :
Tube
Terminal Position :
Single
Surface Mount :
No
Channel Mode :
Enhancement
Channel Type :
N
Number of Pins :
3
ECCN Code :
EAR99
Manufacturer :
IXYS
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Application :
SWITCHING
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
30 Weeks
Turn-Off Delay Time :
66 ns
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Transistor Type :
1 N-Channel
Turn On Delay Time :
30 ns
Reach Compliance Code :
Compliant
Maximum Operating Temperature :
+175 °C
Rise Time :
33ns
Base Product Number :
IXFH96
Height :
21.46mm
Transistor Element Material :
SILICON
Power Dissipation (Max) :
480W (Tc)
Package / Case :
TO-247-3
Number of Elements :
1
Number of Elements per Chip :
1
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Product Category :
MOSFET
Power Dissipation :
480W
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
Product Status :
Active
Power Dissipation-Max :
480W Tc
Drain to Source Breakdown Voltage :
150V
Operating Mode :
ENHANCEMENT MODE
Subcategory :
MOSFETs
Package Type :
TO-247
Tradename :
HiPerFET
Package :
Box
Transistor Polarity :
N-Channel
FET Type :
N-Channel
Lead Free :
Lead Free
Width :
5.3mm
Additional Feature :
AVALANCHE ENERGY RATED
Brand :
IXYS
Continuous Drain Current (ID) :
96A
Element Configuration :
Single
Package Shape :
RECTANGULAR
JEDEC-95 Code :
TO-247AD
Number of Terminals :
3
Case Connection :
DRAIN
Supplier Device Package :
TO-247AD (IXFH)
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Length :
16.26mm
Number of Terminations :
3
Published :
2006
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Through Hole
Datasheets
IXFH96N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH96N15P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, IXFH96N15P pinout, IXFH96N15P datasheet PDF, IXFH96N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH96N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH96N15P


N-Channel Tube 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V 150V TO-247-3

IXFH96N15P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 96A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 66 ns.Peak drain current for this device is 250A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 150 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 150V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH96N15P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)


IXFH96N15P Applications


There are a lot of IXYS
IXFH96N15P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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