IXFH96N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

480W (Tc)

Rise Time :

33ns

Turn On Delay Time :

30 ns

Brand :

IXYS

Avalanche Energy Rating (Eas) :

1000 mJ

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Package / Case :

TO-247-3

Turn-Off Delay Time :

66 ns

JEDEC-95 Code :

TO-247AD

Product Status :

Active

Published :

2006

Polarity/Channel Type :

N-Channel

Transistor Polarity :

N-Channel

Tradename :

HiPerFET

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Product Category :

MOSFET

Package Type :

TO-247

Number of Channels :

1 Channel

Drain to Source Breakdown Voltage :

150V

Manufacturer :

IXYS

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

150 V

Pulsed Drain Current-Max (IDM) :

250A

Continuous Drain Current (ID) :

96A

Series :

PolarHT™ HiPerFET™

Element Configuration :

Single

Pin Count :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Package :

Box

JESD-609 Code :

e1

FET Feature :

--

Vgs(th) (Max) @ Id :

5V @ 4mA

Factory Lead Time :

30 Weeks

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

150V

Width :

5.3mm

Power Dissipation-Max :

480W Tc

Supplier Device Package :

TO-247AD (IXFH)

RoHS :

Details

Rds On (Max) @ Id, Vgs :

24m Ω @ 500mA, 10V

Configuration :

Single

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Maximum Operating Temperature :

+175 °C

Number of Pins :

3

Package Shape :

RECTANGULAR

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Product Number :

IXFH96

Product Type :

MOSFET

Length :

16.26mm

Case Connection :

DRAIN

Pbfree Code :

yes

Additional Feature :

AVALANCHE ENERGY RATED

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Radiation Hardening :

No

Number of Elements per Chip :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Fall Time (Typ) :

18 ns

Height :

21.46mm

Drain-source On Resistance-Max :

0.024Ohm

Channel Type :

N

Mounting Type :

Through Hole

Minimum Operating Temperature :

-55 °C

Power Dissipation :

480W

ECCN Code :

EAR99

Packaging :

Tube

Number of Terminations :

3

Terminal Position :

Single

Number of Terminals :

3

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Mount :

Through Hole

Subcategory :

MOSFETs