IXFH8N80
- Mfr.Part #
- IXFH8N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 8A TO247AD
- Stock
- 47,380
- In Stock :
- 47,380
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Power Dissipation-Max (Abs) :
- 180 W
- Power Dissipation-Max :
- 180W Tc
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Package Shape :
- RECTANGULAR
- Fall Time (Typ) :
- 35 ns
- Turn-Off Delay Time :
- 70 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- Number of Elements :
- 1
- Base Product Number :
- IXFH8
- Mounting Type :
- Through Hole
- FET Feature :
- --
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- TO-247AD (IXFH)
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Length :
- 16.26 mm
- Power Dissipation Ambient-Max :
- 180 W
- Power Dissipation :
- 180W
- Rise Time :
- 15ns
- Qualification Status :
- Not Qualified
- Turn On Time-Max (ton) :
- 210ns
- Drain to Source Voltage (Vdss) :
- 800V
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 32 A
- Series :
- HiPerFET™
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Published :
- 1997
- Width :
- 5.3 mm
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 8A
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 4A, 10V
- Tradename :
- HyperFET
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 180W (Tc)
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 8A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 1.1 Ω
- Maximum Operating Temperature :
- + 150 C
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- JEDEC-95 Code :
- TO-247
- Package / Case :
- TO-247-3
- Brand :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Mode :
- Enhancement
- Product Type :
- MOSFET
- Vgs(th) (Max) @ Id :
- 4.5V @ 2.5mA
- DS Breakdown Voltage-Min :
- 800 V
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 25V
- Manufacturer :
- IXYS
- Height :
- 21.46 mm
- Drain to Source Breakdown Voltage :
- 800V
- Datasheets
- IXFH8N80

N-Channel Tube 1.1 Ω @ 4A, 10V ±20V 2600pF @ 25V 130nC @ 10V 800V TO-247-3
IXFH8N80 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 32 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFH8N80 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 32 A.
a 800V drain to source voltage (Vdss)
IXFH8N80 Applications
There are a lot of IXYS
IXFH8N80 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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