IXFH8N80

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Mfr.Part #
IXFH8N80
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 8A TO247AD
Stock
47,380
In Stock :
47,380

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Power Dissipation-Max (Abs) :
180 W
Power Dissipation-Max :
180W Tc
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Current - Continuous Drain (Id) @ 25°C :
8A Tc
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Package Shape :
RECTANGULAR
Fall Time (Typ) :
35 ns
Turn-Off Delay Time :
70 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mount :
Through Hole
Number of Elements :
1
Base Product Number :
IXFH8
Mounting Type :
Through Hole
FET Feature :
--
Mounting Style :
Through Hole
Number of Terminals :
3
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Configuration :
Single
Transistor Polarity :
N-Channel
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
TO-247AD (IXFH)
Element Configuration :
Single
Transistor Type :
1 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Length :
16.26 mm
Power Dissipation Ambient-Max :
180 W
Power Dissipation :
180W
Rise Time :
15ns
Qualification Status :
Not Qualified
Turn On Time-Max (ton) :
210ns
Drain to Source Voltage (Vdss) :
800V
Package :
Tube
Pulsed Drain Current-Max (IDM) :
32 A
Series :
HiPerFET™
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Published :
1997
Width :
5.3 mm
Pin Count :
3
Transistor Application :
SWITCHING
Polarity/Channel Type :
N-Channel
Packaging :
Tube
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
8A
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 4A, 10V
Tradename :
HyperFET
Number of Channels :
1 Channel
Power Dissipation (Max) :
180W (Tc)
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
8A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
1.1 Ω
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
JEDEC-95 Code :
TO-247
Package / Case :
TO-247-3
Brand :
IXYS
Gate to Source Voltage (Vgs) :
20V
Channel Mode :
Enhancement
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
4.5V @ 2.5mA
DS Breakdown Voltage-Min :
800 V
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 25V
Manufacturer :
IXYS
Height :
21.46 mm
Drain to Source Breakdown Voltage :
800V
Datasheets
IXFH8N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH8N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, IXFH8N80 pinout, IXFH8N80 datasheet PDF, IXFH8N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH8N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH8N80


N-Channel Tube 1.1 Ω @ 4A, 10V ±20V 2600pF @ 25V 130nC @ 10V 800V TO-247-3

IXFH8N80 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Peak drain current is 32 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFH8N80 Features


a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 32 A.
a 800V drain to source voltage (Vdss)


IXFH8N80 Applications


There are a lot of IXYS
IXFH8N80 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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