IXFH88N30P

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Mfr.Part #
IXFH88N30P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 88A TO247AD
Stock
36,133
In Stock :
36,133

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Series :
HiPerFET™, PolarP2™
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Surface Mount :
No
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Manufacturer :
IXYS
Package / Case :
TO-247-3
JEDEC-95 Code :
TO-247AD
Power Dissipation :
600W
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
40m Ω @ 44A, 10V
Qualification Status :
Not Qualified
Height :
21.46mm
Current - Continuous Drain (Id) @ 25°C :
88A Tc
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
Base Product Number :
IXFH88
JESD-30 Code :
R-PSFM-T3
Number of Pins :
3
Reach Compliance Code :
Compliant
Drain to Source Voltage (Vdss) :
300V
Mount :
Through Hole
Length :
16.26mm
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max (Abs) :
600 W
Turn On Delay Time :
25 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
RoHS :
Details
Case Connection :
DRAIN
Product Type :
MOSFET
Product Category :
MOSFET
Tradename :
HiPerFET
Pin Count :
3
Power Dissipation-Max :
600W Tc
Published :
2006
DS Breakdown Voltage-Min :
300 V
Vgs(th) (Max) @ Id :
5V @ 4mA
JESD-609 Code :
e1
Channel Mode :
Enhancement
Supplier Device Package :
TO-247AD (IXFH)
Drain Current-Max (Abs) (ID) :
88 A
Transistor Polarity :
N-Channel
Mounting Type :
Through Hole
Fall Time (Typ) :
25 ns
Mounting Style :
Through Hole
Number of Elements per Chip :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
300V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Package Shape :
RECTANGULAR
Avalanche Energy Rating (Eas) :
2000 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
96 ns
Number of Channels :
1 Channel
Rise Time :
24ns
Width :
5.3mm
Package :
Box
Configuration :
Single
Continuous Drain Current (ID) :
88A
Drain-source On Resistance-Max :
0.04Ohm
Power Dissipation (Max) :
600W (Tc)
Number of Terminals :
3
Transistor Type :
1 N-Channel
Brand :
IXYS
Threshold Voltage :
5V
Factory Lead Time :
30 Weeks
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
Type :
Polar HiPerFET Power MOSFET
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
THROUGH-HOLE
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
20V
FET Feature :
--
Package Type :
TO-247
REACH SVHC :
No SVHC
Lead Free :
Lead Free
Channel Type :
N
Pulsed Drain Current-Max (IDM) :
220A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Element Configuration :
Single
FET Type :
N-Channel
Datasheets
IXFH88N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH88N30P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Type:Polar HiPerFET Power MOSFET, Number of Terminations:3, IXFH88N30P pinout, IXFH88N30P datasheet PDF, IXFH88N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH88N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH88N30P


N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-247-3

IXFH88N30P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6300pF @ 25V.This device has a continuous drain current (ID) of [88A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 88 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 96 ns.A maximum pulsed drain current of 220A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH88N30P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)


IXFH88N30P Applications


There are a lot of IXYS
IXFH88N30P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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