IXFH88N30P
- Mfr.Part #
- IXFH88N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 88A TO247AD
- Stock
- 36,133
- In Stock :
- 36,133
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Series :
- HiPerFET™, PolarP2™
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Surface Mount :
- No
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Manufacturer :
- IXYS
- Package / Case :
- TO-247-3
- JEDEC-95 Code :
- TO-247AD
- Power Dissipation :
- 600W
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 44A, 10V
- Qualification Status :
- Not Qualified
- Height :
- 21.46mm
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Base Product Number :
- IXFH88
- JESD-30 Code :
- R-PSFM-T3
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 300V
- Mount :
- Through Hole
- Length :
- 16.26mm
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max (Abs) :
- 600 W
- Turn On Delay Time :
- 25 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS :
- Details
- Case Connection :
- DRAIN
- Product Type :
- MOSFET
- Product Category :
- MOSFET
- Tradename :
- HiPerFET
- Pin Count :
- 3
- Power Dissipation-Max :
- 600W Tc
- Published :
- 2006
- DS Breakdown Voltage-Min :
- 300 V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- JESD-609 Code :
- e1
- Channel Mode :
- Enhancement
- Supplier Device Package :
- TO-247AD (IXFH)
- Drain Current-Max (Abs) (ID) :
- 88 A
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 25 ns
- Mounting Style :
- Through Hole
- Number of Elements per Chip :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 300V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 96 ns
- Number of Channels :
- 1 Channel
- Rise Time :
- 24ns
- Width :
- 5.3mm
- Package :
- Box
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 88A
- Drain-source On Resistance-Max :
- 0.04Ohm
- Power Dissipation (Max) :
- 600W (Tc)
- Number of Terminals :
- 3
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Threshold Voltage :
- 5V
- Factory Lead Time :
- 30 Weeks
- Vgs (Max) :
- ±20V
- Minimum Operating Temperature :
- - 55 C
- Type :
- Polar HiPerFET Power MOSFET
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 20V
- FET Feature :
- --
- Package Type :
- TO-247
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Channel Type :
- N
- Pulsed Drain Current-Max (IDM) :
- 220A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Datasheets
- IXFH88N30P

N-Channel Tube 40m Ω @ 44A, 10V ±20V 6300pF @ 25V 180nC @ 10V 300V TO-247-3
IXFH88N30P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6300pF @ 25V.This device has a continuous drain current (ID) of [88A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.A device's drain current is its maximum continuous current, and this device's drain current is 88 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 96 ns.A maximum pulsed drain current of 220A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300 V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH88N30P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 220A.
a threshold voltage of 5V
a 300V drain to source voltage (Vdss)
IXFH88N30P Applications
There are a lot of IXYS
IXFH88N30P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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