IXFH86N30T

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Mfr.Part #
IXFH86N30T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 86A TO247AD
Stock
30
In Stock :
30

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Drain-source On Resistance-Max :
0.043Ohm
JEDEC-95 Code :
TO-247
Width :
5.3 mm
Surface Mount :
No
Package :
Tube
Product Status :
Active
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Voltage (Vdss) :
300V
FET Feature :
--
Package / Case :
TO-247-3
Power Dissipation-Max :
860W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
86A Tc
Mounting Style :
Through Hole
Length :
16.26 mm
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Number of Terminations :
3
Type :
Trench HiperFET Power MOSFET
Series :
HiPerFET™, TrenchT2™
Terminal Form :
THROUGH-HOLE
DS Breakdown Voltage-Min :
300V
RoHS :
Details
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation (Max) :
860W (Tc)
Number of Channels :
1 Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
2000 mJ
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
30 Weeks
Drain Current-Max (Abs) (ID) :
86 A
Published :
2009
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Tradename :
HiPerFET
Additional Feature :
AVALANCHE RATED
Height :
21.46 mm
Rds On (Max) @ Id, Vgs :
43m Ω @ 43A, 10V
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max (Abs) :
830 W
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
190A
Vgs(th) (Max) @ Id :
5V @ 4mA
Maximum Operating Temperature :
+ 150 C
Transistor Application :
SWITCHING
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AD (IXFH)
Brand :
IXYS
Rise Time :
18 ns
Number of Terminals :
3
Minimum Operating Temperature :
- 55 C
JESD-30 Code :
R-PSFM-T3
Input Capacitance (Ciss) (Max) @ Vds :
11300pF @ 25V
Mount :
Through Hole
Channel Mode :
Enhancement
Product Category :
MOSFET
Base Product Number :
IXFH86
Transistor Type :
1 N-Channel
Vgs (Max) :
±20V
Number of Elements :
1
FET Type :
N-Channel
Qualification Status :
Not Qualified
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
86A
Manufacturer :
IXYS
Pin Count :
3
JESD-609 Code :
e1
Datasheets
IXFH86N30T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH86N30T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Type:Trench HiperFET Power MOSFET, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFH86N30T pinout, IXFH86N30T datasheet PDF, IXFH86N30T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH86N30T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH86N30T


N-Channel Tube 43m Ω @ 43A, 10V ±20V 11300pF @ 25V 180nC @ 10V 300V TO-247-3

IXFH86N30T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 11300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 86A.86 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 190A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH86N30T Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 86A
based on its rated peak drain current 190A.
a 300V drain to source voltage (Vdss)


IXFH86N30T Applications


There are a lot of IXYS
IXFH86N30T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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