IXFH86N30T
- Mfr.Part #
- IXFH86N30T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 86A TO247AD
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXFH86
- FET Feature :
- --
- Terminal Form :
- THROUGH-HOLE
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Continuous Drain Current (ID) :
- 86A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Type :
- MOSFET
- Rise Time :
- 18 ns
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 N-Channel
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 43A, 10V
- Drain to Source Voltage (Vdss) :
- 300V
- Pbfree Code :
- yes
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- Brand :
- IXYS
- Height :
- 21.46 mm
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Product Status :
- Active
- Width :
- 5.3 mm
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 830 W
- Power Dissipation-Max :
- 860W Tc
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Length :
- 16.26 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Mount :
- Through Hole
- Surface Mount :
- No
- Mounting Style :
- Through Hole
- Supplier Device Package :
- TO-247AD (IXFH)
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 300V
- Input Capacitance (Ciss) (Max) @ Vds :
- 11300pF @ 25V
- Vgs (Max) :
- ±20V
- Tradename :
- HiPerFET
- Number of Terminals :
- 3
- Number of Channels :
- 1 Channel
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- Series :
- HiPerFET™, TrenchT2™
- Type :
- Trench HiperFET Power MOSFET
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Drain-source On Resistance-Max :
- 0.043Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 86 A
- RoHS :
- Details
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 30 Weeks
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-247
- Pulsed Drain Current-Max (IDM) :
- 190A
- Power Dissipation (Max) :
- 860W (Tc)
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Datasheets
- IXFH86N30T
IXFH86N30T Documents

N-Channel Tube 43m Ω @ 43A, 10V ±20V 11300pF @ 25V 180nC @ 10V 300V TO-247-3
IXFH86N30T Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 11300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 86A.86 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 190A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH86N30T Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 86A
based on its rated peak drain current 190A.
a 300V drain to source voltage (Vdss)
IXFH86N30T Applications
There are a lot of IXYS
IXFH86N30T applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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