IXFH86N30T

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Mfr.Part #
IXFH86N30T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 86A TO247AD
Stock
30
In Stock :
30

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
43m Ω @ 43A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
11300pF @ 25V
Series :
HiPerFET™, TrenchT2™
Power Dissipation-Max :
860W Tc
Avalanche Energy Rating (Eas) :
2000 mJ
Tradename :
HiPerFET
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
300V
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+ 150 C
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Category :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Type :
Trench HiperFET Power MOSFET
Transistor Element Material :
SILICON
Pin Count :
3
Power Dissipation (Max) :
860W (Tc)
Drain Current-Max (Abs) (ID) :
86 A
Manufacturer :
IXYS
Minimum Operating Temperature :
- 55 C
Pbfree Code :
yes
Transistor Polarity :
N-Channel
Mounting Style :
Through Hole
Mounting Type :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Voltage (Vdss) :
300V
Base Product Number :
IXFH86
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
0.043Ohm
FET Type :
N-Channel
Product Status :
Active
Package Shape :
RECTANGULAR
Rise Time :
18 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
JESD-30 Code :
R-PSFM-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Vgs(th) (Max) @ Id :
5V @ 4mA
JESD-609 Code :
e1
Continuous Drain Current (ID) :
86A
FET Feature :
--
Height :
21.46 mm
Terminal Position :
Single
Transistor Type :
1 N-Channel
Published :
2009
Channel Mode :
Enhancement
Factory Lead Time :
30 Weeks
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
Product Type :
MOSFET
Case Connection :
DRAIN
Number of Elements :
1
Power Dissipation-Max (Abs) :
830 W
RoHS :
Details
Mount :
Through Hole
Package / Case :
TO-247-3
Packaging :
Tube
Width :
5.3 mm
Terminal Form :
THROUGH-HOLE
Brand :
IXYS
JEDEC-95 Code :
TO-247
Number of Terminals :
3
Supplier Device Package :
TO-247AD (IXFH)
Number of Channels :
1 Channel
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Length :
16.26 mm
Qualification Status :
Not Qualified
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
86A Tc
Pulsed Drain Current-Max (IDM) :
190A
Datasheets
IXFH86N30T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH86N30T from Chip IC,where excellence meets affordability. This product stands out with its Type:Trench HiperFET Power MOSFET, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXFH86N30T pinout, IXFH86N30T datasheet PDF, IXFH86N30T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH86N30T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH86N30T


N-Channel Tube 43m Ω @ 43A, 10V ±20V 11300pF @ 25V 180nC @ 10V 300V TO-247-3

IXFH86N30T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 11300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 86A.86 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 190A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH86N30T Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 86A
based on its rated peak drain current 190A.
a 300V drain to source voltage (Vdss)


IXFH86N30T Applications


There are a lot of IXYS
IXFH86N30T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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