IXFH86N30T

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Mfr.Part #
IXFH86N30T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 300V 86A TO247AD
Stock
30
In Stock :
30

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFH86
FET Feature :
--
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
86A Tc
Continuous Drain Current (ID) :
86A
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Type :
MOSFET
Rise Time :
18 ns
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 N-Channel
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
43m Ω @ 43A, 10V
Drain to Source Voltage (Vdss) :
300V
Pbfree Code :
yes
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
Brand :
IXYS
Height :
21.46 mm
Published :
2009
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
2000 mJ
Product Status :
Active
Width :
5.3 mm
Package :
Tube
Power Dissipation-Max (Abs) :
830 W
Power Dissipation-Max :
860W Tc
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Length :
16.26 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Mode :
Enhancement
Mount :
Through Hole
Surface Mount :
No
Mounting Style :
Through Hole
Supplier Device Package :
TO-247AD (IXFH)
Pin Count :
3
Vgs(th) (Max) @ Id :
5V @ 4mA
Number of Elements :
1
DS Breakdown Voltage-Min :
300V
Input Capacitance (Ciss) (Max) @ Vds :
11300pF @ 25V
Vgs (Max) :
±20V
Tradename :
HiPerFET
Number of Terminals :
3
Number of Channels :
1 Channel
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
- 55 C
Case Connection :
DRAIN
Manufacturer :
IXYS
Product Category :
MOSFET
Series :
HiPerFET™, TrenchT2™
Type :
Trench HiperFET Power MOSFET
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Drain-source On Resistance-Max :
0.043Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
86 A
RoHS :
Details
Package / Case :
TO-247-3
Factory Lead Time :
30 Weeks
Number of Terminations :
3
JEDEC-95 Code :
TO-247
Pulsed Drain Current-Max (IDM) :
190A
Power Dissipation (Max) :
860W (Tc)
Qualification Status :
Not Qualified
Terminal Position :
Single
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH86N30T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, Type:Trench HiperFET Power MOSFET, Package / Case:TO-247-3, Number of Terminations:3, IXFH86N30T pinout, IXFH86N30T datasheet PDF, IXFH86N30T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH86N30T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH86N30T


N-Channel Tube 43m Ω @ 43A, 10V ±20V 11300pF @ 25V 180nC @ 10V 300V TO-247-3

IXFH86N30T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 11300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 86A.86 A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 190A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH86N30T Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 86A
based on its rated peak drain current 190A.
a 300V drain to source voltage (Vdss)


IXFH86N30T Applications


There are a lot of IXYS
IXFH86N30T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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