IXFH80N65X2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

3000 mJ

Channel Type :

N Channel

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

890W (Tc)

Subcategory :

MOSFETs

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Tradename :

HiPerFET

Package Shape :

RECTANGULAR

Surface Mount :

No

MSL :

MSL 1 - Unlimited

Qualification :

-

Operating Temperature :

-55°C~150°C TJ

Product Status :

Active

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

8245pF @ 25V

Manufacturer :

IXYS

Input Capacitance :

8.245 nF

FET Type :

N-Channel

Number of Terminations :

3

Vgs (Max) :

±30V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Base Product Number :

IXFH80

Gate Charge (Qg) (Max) @ Vgs :

143nC @ 10V

ECCN Code :

EAR99

Number of Elements :

1

Package / Case :

TO-247-3

Packaging :

Tube

Number of Elements per Chip :

1

Length :

16.13mm

Power Dissipation :

890W

Package Type :

TO-247

Channel Mode :

Enhancement

Product Category :

MOSFET

Drain to Source Resistance :

38 mΩ

Width :

5.21mm

RoHS :

Compliant

Pin Count :

3

Mounting Style :

Through Hole

JEDEC-95 Code :

TO-247

Continuous Drain Current (ID) :

80A

FET Feature :

--

Continuous Drain Current Id :

80A

Rds On Max :

40 mΩ

Case Connection :

DRAIN

Supplier Device Package :

TO-247

Transistor Element Material :

SILICON

Minimum Operating Temperature :

-55 °C

Transistor Polarity :

N-Channel

Transistor Application :

SWITCHING

Series :

HiPerFET™

Published :

2015

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

650V

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Maximum Operating Temperature :

+150 °C

Vgs(th) (Max) @ Id :

5.5V @ 4mA

Brand :

IXYS

Drain-source On Resistance-Max :

0.038Ohm

Number of Terminals :

3

Factory Lead Time :

19 Weeks

Power Dissipation-Max :

890W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Min Operating Temperature :

-55 °C

Package :

Tube

Rise Time :

42 ns

DS Breakdown Voltage-Min :

650V

Max Power Dissipation :

890 W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150 °C

Pulsed Drain Current-Max (IDM) :

160A

Height :

21.34mm

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

40m Ω @ 40A, 10V

Product Type :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel