IXFH80N20Q

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Mfr.Part #
IXFH80N20Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 80A TO247AD
Stock
77,539
In Stock :
77,539

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
8 Weeks
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Transistor Application :
SWITCHING
Number of Elements :
1
JESD-609 Code :
e1
Drain Current-Max (Abs) (ID) :
80 A
Current Rating :
80A
Power Dissipation :
360W
Power Dissipation (Max) :
360W (Tc)
Power Dissipation-Max (Abs) :
360 W
Additional Feature :
AVALANCHE RATED
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Package / Case :
TO-247-3
Case Connection :
DRAIN
FET Feature :
--
Avalanche Energy Rating (Eas) :
1500 mJ
Rise Time :
50ns
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
3
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 4mA
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
28m Ω @ 500mA, 10V
Package :
Tube
Drain to Source Breakdown Voltage :
200V
Mounting Type :
Through Hole
Base Product Number :
IXFH80
JESD-30 Code :
R-PSFM-T3
Terminal Position :
Single
Manufacturer :
IXYS Corporation
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
360W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-247AD (IXFH)
Series :
HiPerFET™
Moisture Sensitivity Level (MSL) :
Not Applicable
Turn-Off Delay Time :
75 ns
Terminal Form :
THROUGH-HOLE
Package Shape :
RECTANGULAR
Voltage - Rated DC :
200V
JEDEC-95 Code :
TO-247
Mount :
Through Hole
Packaging :
Tube
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Product Status :
Obsolete
Pbfree Code :
yes
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain-source On Resistance-Max :
0.028 Ω
Surface Mount :
No
Pulsed Drain Current-Max (IDM) :
320 A
Number of Pins :
3
Drain to Source Voltage (Vdss) :
200V
Fall Time (Typ) :
20 ns
DS Breakdown Voltage-Min :
200 V
RoHS Status :
RoHS Compliant
Radiation Hardening :
No
Resistance :
28mOhm
Polarity/Channel Type :
N-Channel
Number of Terminals :
3
Element Configuration :
Single
Continuous Drain Current (ID) :
80A
Published :
2000
Datasheets
IXFH80N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH80N20Q from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFH80N20Q pinout, IXFH80N20Q datasheet PDF, IXFH80N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH80N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH80N20Q


N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-247-3

IXFH80N20Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 80 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 320 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH80N20Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320 A.
a 200V drain to source voltage (Vdss)


IXFH80N20Q Applications


There are a lot of IXYS
IXFH80N20Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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