IXFH80N20Q
- Mfr.Part #
- IXFH80N20Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 80A TO247AD
- Stock
- 77,539
- In Stock :
- 77,539
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Drain Current-Max (Abs) (ID) :
- 80 A
- Current Rating :
- 80A
- Power Dissipation :
- 360W
- Power Dissipation (Max) :
- 360W (Tc)
- Power Dissipation-Max (Abs) :
- 360 W
- Additional Feature :
- AVALANCHE RATED
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Package / Case :
- TO-247-3
- Case Connection :
- DRAIN
- FET Feature :
- --
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Rise Time :
- 50ns
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 500mA, 10V
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 200V
- Mounting Type :
- Through Hole
- Base Product Number :
- IXFH80
- JESD-30 Code :
- R-PSFM-T3
- Terminal Position :
- Single
- Manufacturer :
- IXYS Corporation
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 360W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- TO-247AD (IXFH)
- Series :
- HiPerFET™
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Turn-Off Delay Time :
- 75 ns
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Voltage - Rated DC :
- 200V
- JEDEC-95 Code :
- TO-247
- Mount :
- Through Hole
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Obsolete
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain-source On Resistance-Max :
- 0.028 Ω
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 200V
- Fall Time (Typ) :
- 20 ns
- DS Breakdown Voltage-Min :
- 200 V
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Resistance :
- 28mOhm
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 80A
- Published :
- 2000
- Datasheets
- IXFH80N20Q

N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-247-3
IXFH80N20Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 80 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 320 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH80N20Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320 A.
a 200V drain to source voltage (Vdss)
IXFH80N20Q Applications
There are a lot of IXYS
IXFH80N20Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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