IXFH80N20Q

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Mfr.Part #
IXFH80N20Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 80A TO247AD
Stock
77,539
In Stock :
77,539

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Rise Time :
50ns
Published :
2000
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS Corporation
Mount :
Through Hole
RoHS Status :
RoHS Compliant
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Voltage - Rated DC :
200V
Qualification Status :
Not Qualified
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Supplier Device Package :
TO-247AD (IXFH)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max (Abs) :
360 W
Package Shape :
RECTANGULAR
Number of Elements :
1
Case Connection :
DRAIN
ECCN Code :
EAR99
Additional Feature :
AVALANCHE RATED
Drain-source On Resistance-Max :
0.028 Ω
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
4V @ 4mA
Drain Current-Max (Abs) (ID) :
80 A
Base Product Number :
IXFH80
Continuous Drain Current (ID) :
80A
Transistor Application :
SWITCHING
Element Configuration :
Single
Package :
Tube
JESD-609 Code :
e1
Power Dissipation-Max :
360W Tc
Pulsed Drain Current-Max (IDM) :
320 A
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Input Capacitance (Ciss) (Max) @ Vds :
4600pF @ 25V
Fall Time (Typ) :
20 ns
Mounting Type :
Through Hole
Pbfree Code :
yes
Power Dissipation :
360W
Drain to Source Breakdown Voltage :
200V
Package / Case :
TO-247-3
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
360W (Tc)
FET Type :
N-Channel
Current Rating :
80A
Number of Terminations :
3
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
Not Applicable
Terminal Form :
THROUGH-HOLE
Series :
HiPerFET™
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Resistance :
28mOhm
Rds On (Max) @ Id, Vgs :
28m Ω @ 500mA, 10V
Lead Free :
Lead Free
Number of Terminals :
3
Turn-Off Delay Time :
75 ns
Avalanche Energy Rating (Eas) :
1500 mJ
Product Status :
Obsolete
Factory Lead Time :
8 Weeks
Drain to Source Voltage (Vdss) :
200V
Number of Pins :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
DS Breakdown Voltage-Min :
200 V
JEDEC-95 Code :
TO-247
Pin Count :
3
FET Feature :
--
Packaging :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSFM-T3
Datasheets
IXFH80N20Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH80N20Q from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, IXFH80N20Q pinout, IXFH80N20Q datasheet PDF, IXFH80N20Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH80N20Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH80N20Q


N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-247-3

IXFH80N20Q Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 80 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 320 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFH80N20Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320 A.
a 200V drain to source voltage (Vdss)


IXFH80N20Q Applications


There are a lot of IXYS
IXFH80N20Q applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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