IXFH80N20Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Moisture Sensitivity Level (MSL) :

Not Applicable

Package :

Tube

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

80A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Turn-Off Delay Time :

75 ns

Vgs(th) (Max) @ Id :

4V @ 4mA

ECCN Code :

EAR99

Continuous Drain Current (ID) :

80A

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

28m Ω @ 500mA, 10V

Power Dissipation (Max) :

360W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Rise Time :

50ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Base Product Number :

IXFH80

Product Status :

Obsolete

Resistance :

28mOhm

Power Dissipation :

360W

Qualification Status :

Not Qualified

Fall Time (Typ) :

20 ns

Series :

HiPerFET™

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

360W Tc

Mount :

Through Hole

Vgs (Max) :

±20V

Number of Elements :

1

Factory Lead Time :

8 Weeks

JEDEC-95 Code :

TO-247

Drain-source On Resistance-Max :

0.028 Ω

FET Type :

N-Channel

Package / Case :

TO-247-3

Supplier Device Package :

TO-247AD (IXFH)

Case Connection :

DRAIN

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

1500 mJ

Lead Free :

Lead Free

Number of Pins :

3

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

200V

Drain to Source Breakdown Voltage :

200V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Published :

2000

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

200 V

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

360 W

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

320 A

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Manufacturer :

IXYS Corporation

FET Feature :

--

Packaging :

Tube

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

Mounting Type :

Through Hole

Number of Terminals :

3

Drain Current-Max (Abs) (ID) :

80 A