IXFH80N20Q
- Mfr.Part #
- IXFH80N20Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 80A TO247AD
- Stock
- 77,539
- In Stock :
- 77,539
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Rise Time :
- 50ns
- Published :
- 2000
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS Corporation
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 200V
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-247AD (IXFH)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max (Abs) :
- 360 W
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Additional Feature :
- AVALANCHE RATED
- Drain-source On Resistance-Max :
- 0.028 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Drain Current-Max (Abs) (ID) :
- 80 A
- Base Product Number :
- IXFH80
- Continuous Drain Current (ID) :
- 80A
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Package :
- Tube
- JESD-609 Code :
- e1
- Power Dissipation-Max :
- 360W Tc
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Fall Time (Typ) :
- 20 ns
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Power Dissipation :
- 360W
- Drain to Source Breakdown Voltage :
- 200V
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 360W (Tc)
- FET Type :
- N-Channel
- Current Rating :
- 80A
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Terminal Form :
- THROUGH-HOLE
- Series :
- HiPerFET™
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Resistance :
- 28mOhm
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 500mA, 10V
- Lead Free :
- Lead Free
- Number of Terminals :
- 3
- Turn-Off Delay Time :
- 75 ns
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Product Status :
- Obsolete
- Factory Lead Time :
- 8 Weeks
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DS Breakdown Voltage-Min :
- 200 V
- JEDEC-95 Code :
- TO-247
- Pin Count :
- 3
- FET Feature :
- --
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- IXFH80N20Q

N-Channel Tube 28m Ω @ 500mA, 10V ±20V 4600pF @ 25V 180nC @ 10V 200V TO-247-3
IXFH80N20Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 4600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 80 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 320 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFH80N20Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 320 A.
a 200V drain to source voltage (Vdss)
IXFH80N20Q Applications
There are a lot of IXYS
IXFH80N20Q applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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