IXFH80N15Q
- Mfr.Part #
- IXFH80N15Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 80A TO247AD
- Stock
- 1,234
- In Stock :
- 1,234
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Terminal Position :
- Single
- Fall Time (Typ) :
- 20 ns
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Compliant
- Rise Time :
- 55ns
- Power Dissipation (Max) :
- 360W (Tc)
- Drain-source On Resistance-Max :
- 0.0225Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminals :
- 3
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 68 ns
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Number of Pins :
- 3
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 150 V
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- HiPerFET™
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 150V
- Published :
- 2001
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 80 A
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 360W Tc
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- JESD-30 Code :
- R-PSFM-T3
- Supplier Device Package :
- TO-247AD (IXFH)
- Package / Case :
- TO-247-3
- JEDEC-95 Code :
- TO-247
- Power Dissipation :
- 360W
- Number of Elements :
- 1
- Base Product Number :
- IXFH80
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 22.5m Ω @ 40A, 10V
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS Corporation
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 80A
- Mount :
- Through Hole
- FET Feature :
- --
- JESD-609 Code :
- e1
- Drain to Source Voltage (Vdss) :
- 150V
- Power Dissipation-Max (Abs) :
- 360 W
- Product Status :
- Obsolete
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IXFH80N15Q

N-Channel Tube 22.5m Ω @ 40A, 10V ±20V 4500pF @ 25V 180nC @ 10V 150V TO-247-3
IXFH80N15Q Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 150V.There is no drain current on this device since the maximum continuous current it can conduct is 80 A.As a result of its turn-off delay time, which is 68 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 320 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 150 V, it should remain above the 150 V level.The transistor must receive a 150V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH80N15Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 320 A.
a 150V drain to source voltage (Vdss)
IXFH80N15Q Applications
There are a lot of IXYS
IXFH80N15Q applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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