IXFH80N15Q

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Mfr.Part #
IXFH80N15Q
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 80A TO247AD
Stock
1,234
In Stock :
1,234

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Terminal Position :
Single
Fall Time (Typ) :
20 ns
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±20V
Reach Compliance Code :
Compliant
Rise Time :
55ns
Power Dissipation (Max) :
360W (Tc)
Drain-source On Resistance-Max :
0.0225Ohm
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminals :
3
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
68 ns
Element Configuration :
Single
Terminal Form :
THROUGH-HOLE
Number of Pins :
3
Number of Terminations :
3
RoHS Status :
RoHS Compliant
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
150 V
Packaging :
Tube
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
HiPerFET™
Surface Mount :
No
Drain to Source Breakdown Voltage :
150V
Published :
2001
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 4mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
80 A
Transistor Application :
SWITCHING
Power Dissipation-Max :
360W Tc
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
80A Tc
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-247AD (IXFH)
Package / Case :
TO-247-3
JEDEC-95 Code :
TO-247
Power Dissipation :
360W
Number of Elements :
1
Base Product Number :
IXFH80
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) :
1500 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
22.5m Ω @ 40A, 10V
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
320 A
Mounting Type :
Through Hole
Manufacturer :
IXYS Corporation
Gate to Source Voltage (Vgs) :
20V
Pin Count :
3
Continuous Drain Current (ID) :
80A
Mount :
Through Hole
FET Feature :
--
JESD-609 Code :
e1
Drain to Source Voltage (Vdss) :
150V
Power Dissipation-Max (Abs) :
360 W
Product Status :
Obsolete
Operating Mode :
ENHANCEMENT MODE
Datasheets
IXFH80N15Q
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH80N15Q from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, IXFH80N15Q pinout, IXFH80N15Q datasheet PDF, IXFH80N15Q amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH80N15Q ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH80N15Q


N-Channel Tube 22.5m Ω @ 40A, 10V ±20V 4500pF @ 25V 180nC @ 10V 150V TO-247-3

IXFH80N15Q Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 150V.There is no drain current on this device since the maximum continuous current it can conduct is 80 A.As a result of its turn-off delay time, which is 68 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 320 A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 150 V, it should remain above the 150 V level.The transistor must receive a 150V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH80N15Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 320 A.
a 150V drain to source voltage (Vdss)


IXFH80N15Q Applications


There are a lot of IXYS
IXFH80N15Q applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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