IXFH80N10Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Lead Free :

Lead Free

Base Product Number :

IXFH80

Vgs(th) (Max) @ Id :

4V @ 4mA

Turn-Off Delay Time :

68 ns

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Power Dissipation (Max) :

360W (Tc)

Number of Terminals :

3

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Rise Time :

70ns

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

Not Applicable

Drain to Source Breakdown Voltage :

100V

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Rds On (Max) @ Id, Vgs :

15m Ω @ 40A, 10V

JESD-609 Code :

e1

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

FET Type :

N-Channel

Terminal Position :

Single

DS Breakdown Voltage-Min :

100 V

Packaging :

Tube

Qualification Status :

Not Qualified

Manufacturer :

IXYS Corporation

Number of Pins :

3

Number of Terminations :

3

Reach Compliance Code :

Compliant

Surface Mount :

No

Drain-source On Resistance-Max :

0.015 Ω

JEDEC-95 Code :

TO-247

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Resistance :

150mOhm

Published :

2000

Continuous Drain Current (ID) :

80A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Fall Time (Typ) :

30 ns

Power Dissipation-Max :

360W Tc

Pulsed Drain Current-Max (IDM) :

320 A

Number of Elements :

1

Power Dissipation :

360W

Product Status :

Obsolete

Package Shape :

RECTANGULAR

Series :

HiPerFET™

ECCN Code :

EAR99

Vgs (Max) :

±20V

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Voltage - Rated DC :

100V

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1500 mJ

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Radiation Hardening :

No

Supplier Device Package :

TO-247AD (IXFH)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

80A

RoHS Status :

RoHS Compliant

Package :

Tube