IXFH80N10

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Mfr.Part #
IXFH80N10
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 80A TO247AD
Stock
20
In Stock :
20

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
DS Breakdown Voltage-Min :
100 V
RoHS Status :
RoHS Compliant
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
JESD-609 Code :
e1
Product Status :
Obsolete
Power Dissipation (Max) :
360W (Tc)
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Resistance :
150mOhm
Manufacturer :
IXYS Corporation
JESD-30 Code :
R-PSFM-T3
Rise Time :
70ns
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
15m Ω @ 40A, 10V
Published :
2000
Power Dissipation-Max :
360W Tc
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Factory Lead Time :
8 Weeks
Pbfree Code :
yes
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 4mA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
320 A
Number of Elements :
1
Drain to Source Voltage (Vdss) :
100V
Surface Mount :
No
Number of Pins :
3
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
100V
Supplier Device Package :
TO-247AD (IXFH)
Vgs (Max) :
±20V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Series :
HiPerFET™
Fall Time (Typ) :
30 ns
JEDEC-95 Code :
TO-247
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
Not Applicable
Package :
Tube
Power Dissipation :
360W
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
80A
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Lead Free
Voltage - Rated DC :
100V
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Terminal Form :
THROUGH-HOLE
Radiation Hardening :
No
Current Rating :
80A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
0.015 Ω
Turn-Off Delay Time :
68 ns
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Package / Case :
TO-247-3
Pin Count :
3
Base Product Number :
IXFH80
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
1500 mJ
Number of Terminations :
3
Datasheets
IXFH80N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH80N10 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, IXFH80N10 pinout, IXFH80N10 datasheet PDF, IXFH80N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH80N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH80N10


N-Channel Tube 15m Ω @ 40A, 10V ±20V 4500pF @ 25V 180nC @ 10V 100V TO-247-3

IXFH80N10Q Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4500pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 68 ns.A maximum pulsed drain current of 320 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH80N10Q Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 320 A.
a 100V drain to source voltage (Vdss)


IXFH80N10Q Applications


There are a lot of IXYS
IXFH80N10Q applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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