IXFH80N10
- Mfr.Part #
- IXFH80N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 80A TO247AD
- Stock
- 20
- In Stock :
- 20
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 100 V
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- JESD-609 Code :
- e1
- Product Status :
- Obsolete
- Power Dissipation (Max) :
- 360W (Tc)
- Polarity/Channel Type :
- N-Channel
- Mount :
- Through Hole
- Resistance :
- 150mOhm
- Manufacturer :
- IXYS Corporation
- JESD-30 Code :
- R-PSFM-T3
- Rise Time :
- 70ns
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 40A, 10V
- Published :
- 2000
- Power Dissipation-Max :
- 360W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Factory Lead Time :
- 8 Weeks
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- Surface Mount :
- No
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 100V
- Supplier Device Package :
- TO-247AD (IXFH)
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Series :
- HiPerFET™
- Fall Time (Typ) :
- 30 ns
- JEDEC-95 Code :
- TO-247
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Package :
- Tube
- Power Dissipation :
- 360W
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 80A
- Number of Terminals :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- Radiation Hardening :
- No
- Current Rating :
- 80A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.015 Ω
- Turn-Off Delay Time :
- 68 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- Base Product Number :
- IXFH80
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Number of Terminations :
- 3
- Datasheets
- IXFH80N10

N-Channel Tube 15m Ω @ 40A, 10V ±20V 4500pF @ 25V 180nC @ 10V 100V TO-247-3
IXFH80N10Q Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4500pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 68 ns.A maximum pulsed drain current of 320 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100 V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH80N10Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 320 A.
a 100V drain to source voltage (Vdss)
IXFH80N10Q Applications
There are a lot of IXYS
IXFH80N10Q applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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