IXFH80N085
- Mfr.Part #
- IXFH80N085
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 85V 80A TO247AD
- Stock
- 24,069
- In Stock :
- 24,069
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Manufacturer :
- IXYS Corporation
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Transistor Element Material :
- SILICON
- Series :
- HiPerFET™
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Pin Count :
- 3
- Package :
- Tube
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Fall Time (Typ) :
- 31 ns
- DS Breakdown Voltage-Min :
- 80 V
- Resistance :
- 9mOhm
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXFH80
- Power Dissipation-Max :
- 300W Tc
- JESD-30 Code :
- R-PSFM-T3
- Supplier Device Package :
- TO-247AD (IXFH)
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 40A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Rise Time :
- 75ns
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.009 Ω
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Element Configuration :
- Single
- Number of Terminals :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 85A
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Published :
- 2000
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 300W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 320 A
- Power Dissipation :
- 300W
- Turn-Off Delay Time :
- 95 ns
- Drain to Source Breakdown Voltage :
- 85V
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 80A
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-247
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 85V
- Vgs (Max) :
- ±20V
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXFH80N085

N-Channel Tube 9m Ω @ 40A, 10V ±20V 4800pF @ 25V 180nC @ 10V 85V TO-247-3
IXFH80N085 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 4800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=85V, and this device has a drain-to-source breakdown voltage of 85V voltage.Its drain current is 85A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 95 ns.Its maximum pulsed drain current is 320 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 80 V.To operate this transistor, you need to apply a 85V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH80N085 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 320 A.
a 85V drain to source voltage (Vdss)
IXFH80N085 Applications
There are a lot of IXYS
IXFH80N085 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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