IXFH80N085

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Mfr.Part #
IXFH80N085
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 85V 80A TO247AD
Stock
24,069
In Stock :
24,069

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
RoHS Compliant
Reach Compliance Code :
Compliant
Manufacturer :
IXYS Corporation
Avalanche Energy Rating (Eas) :
2500 mJ
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Transistor Element Material :
SILICON
Series :
HiPerFET™
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
--
Pin Count :
3
Package :
Tube
Case Connection :
DRAIN
Lead Free :
Lead Free
Product Status :
Obsolete
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Mounting Type :
Through Hole
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Fall Time (Typ) :
31 ns
DS Breakdown Voltage-Min :
80 V
Resistance :
9mOhm
Packaging :
Tube
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Base Product Number :
IXFH80
Power Dissipation-Max :
300W Tc
JESD-30 Code :
R-PSFM-T3
Supplier Device Package :
TO-247AD (IXFH)
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
9m Ω @ 40A, 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Qualification Status :
Not Qualified
Rise Time :
75ns
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
4V @ 4mA
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.009 Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Element Configuration :
Single
Number of Terminals :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
85A
Mount :
Through Hole
Number of Terminations :
3
Published :
2000
Pbfree Code :
yes
FET Type :
N-Channel
Power Dissipation (Max) :
300W (Tc)
Pulsed Drain Current-Max (IDM) :
320 A
Power Dissipation :
300W
Turn-Off Delay Time :
95 ns
Drain to Source Breakdown Voltage :
85V
Number of Elements :
1
Continuous Drain Current (ID) :
80A
Number of Pins :
3
JEDEC-95 Code :
TO-247
Package / Case :
TO-247-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
85V
Vgs (Max) :
±20V
Polarity/Channel Type :
N-Channel
Datasheets
IXFH80N085
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH80N085 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, IXFH80N085 pinout, IXFH80N085 datasheet PDF, IXFH80N085 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH80N085 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH80N085


N-Channel Tube 9m Ω @ 40A, 10V ±20V 4800pF @ 25V 180nC @ 10V 85V TO-247-3

IXFH80N085 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 4800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=85V, and this device has a drain-to-source breakdown voltage of 85V voltage.Its drain current is 85A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 95 ns.Its maximum pulsed drain current is 320 A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 80 V.To operate this transistor, you need to apply a 85V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH80N085 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 320 A.
a 85V drain to source voltage (Vdss)


IXFH80N085 Applications


There are a lot of IXYS
IXFH80N085 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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