IXFH80N06
- Mfr.Part #
- IXFH80N06
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 80A TO247AD
- Stock
- 43,986
- In Stock :
- 43,986
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.0065ohm
- DS Breakdown Voltage-Min :
- 60V
- Terminal Form :
- THROUGH-HOLE
- Number of Elements :
- 1
- Base Product Number :
- IXFH80
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- --
- Rds On (Max) @ Id, Vgs :
- --
- Transistor Element Material :
- SILICON
- Operating Temperature (Max) :
- 150°C
- Reach Compliance Code :
- Compliant
- Pulsed Drain Current-Max (IDM) :
- 320A
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 80A
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-247AD
- Product Status :
- Obsolete
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Supplier Device Package :
- TO-247AD (IXFH)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- RoHS :
- Compliant
- Operating Temperature :
- --
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- --
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- --
- Manufacturer :
- IXYS Corporation
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 60V
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Package :
- Tube
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Datasheets
- IXFH80N06

N-Channel Tube -- ±20V 60V TO-247-3
IXFH80N06 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.Peak drain current for this device is 320A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH80N06 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 320A.
a 60V drain to source voltage (Vdss)
IXFH80N06 Applications
There are a lot of IXYS
IXFH80N06 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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