IXFH7N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 2.5mA

Width :

5.3 mm

Drain Current-Max (Abs) (ID) :

7A

Current Rating :

7A

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Drain to Source Breakdown Voltage :

800V

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™

JEDEC-95 Code :

TO-247

FET Type :

N-Channel

FET Feature :

--

Product Status :

Active

Package :

Tube

Power Dissipation :

180W

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

Product Category :

MOSFET

Voltage - Rated DC :

800V

Turn-Off Delay Time :

100 ns

Continuous Drain Current (ID) :

7A

Reach Compliance Code :

Compliant

Mounting Style :

Through Hole

Power Dissipation-Max :

180W Tc

RoHS :

Details

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 3.5A, 10V

Supplier Device Package :

TO-247AD (IXFH)

Number of Elements :

1

Height :

21.46 mm

Power Dissipation Ambient-Max :

180 W

Minimum Operating Temperature :

- 55 C

Manufacturer :

IXYS

Terminal Position :

Single

Power Dissipation (Max) :

180W (Tc)

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFH7

Mount :

Through Hole

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

3

Mounting Type :

Through Hole

Number of Channels :

1 Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2000

Pulsed Drain Current-Max (IDM) :

28A

Terminal Form :

THROUGH-HOLE

Element Configuration :

Single

Brand :

IXYS

Length :

16.26 mm

JESD-609 Code :

e1

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max (Abs) :

180 W

DS Breakdown Voltage-Min :

800 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

40ns

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Fall Time (Typ) :

60 ns

Maximum Operating Temperature :

+ 150 C

Package Shape :

RECTANGULAR

Tradename :

HyperFET

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Drain-source On Resistance-Max :

1.4 Ω