IXFH7N80

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Mfr.Part #
IXFH7N80
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 7A TO247AD
Stock
31,802
In Stock :
31,802

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JEDEC-95 Code :
TO-247
Number of Channels :
1 Channel
Current Rating :
7A
Package / Case :
TO-247-3
Factory Lead Time :
8 Weeks
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
FET Feature :
--
Minimum Operating Temperature :
- 55 C
Rise Time :
40ns
Terminal Form :
THROUGH-HOLE
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
21.46 mm
Vgs(th) (Max) @ Id :
4.5V @ 2.5mA
Pin Count :
3
Product Category :
MOSFET
Case Connection :
DRAIN
Power Dissipation Ambient-Max :
180 W
Product Status :
Active
Continuous Drain Current (ID) :
7A
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 25V
RoHS :
Details
Mounting Style :
Through Hole
Brand :
IXYS
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 3.5A, 10V
Element Configuration :
Single
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
800V
Mount :
Through Hole
Product Type :
MOSFET
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
180W (Tc)
Transistor Element Material :
SILICON
Power Dissipation :
180W
Drain to Source Voltage (Vdss) :
800V
Polarity/Channel Type :
N-Channel
Published :
2000
Number of Elements :
1
Drain-source On Resistance-Max :
1.4 Ω
Gate to Source Voltage (Vgs) :
20V
Number of Terminals :
3
Fall Time (Typ) :
60 ns
Additional Feature :
AVALANCHE RATED
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
7A
Configuration :
Single
Series :
HiPerFET™
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
180 W
Width :
5.3 mm
Surface Mount :
No
Reach Compliance Code :
Compliant
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Tradename :
HyperFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) :
28A
Voltage - Rated DC :
800V
Maximum Operating Temperature :
+ 150 C
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Manufacturer :
IXYS
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Length :
16.26 mm
Qualification Status :
Not Qualified
JESD-609 Code :
e1
Base Product Number :
IXFH7
Supplier Device Package :
TO-247AD (IXFH)
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
DS Breakdown Voltage-Min :
800 V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation-Max :
180W Tc
Package :
Tube
Turn-Off Delay Time :
100 ns
Channel Mode :
Enhancement
Packaging :
Tube
Datasheets
IXFH7N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFH7N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFH7N80 pinout, IXFH7N80 datasheet PDF, IXFH7N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFH7N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFH7N80


N-Channel Tube 1.4 Ω @ 3.5A, 10V ±20V 2800pF @ 25V 130nC @ 10V 800V TO-247-3

IXFH7N80 Overview


A device's maximum input capacitance is 2800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Its maximum pulsed drain current is 28A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH7N80 Features


a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 28A.
a 800V drain to source voltage (Vdss)


IXFH7N80 Applications


There are a lot of IXYS
IXFH7N80 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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