IXFH7N80
- Mfr.Part #
- IXFH7N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 7A TO247AD
- Stock
- 31,802
- In Stock :
- 31,802
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-247
- Number of Channels :
- 1 Channel
- Current Rating :
- 7A
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 8 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- Minimum Operating Temperature :
- - 55 C
- Rise Time :
- 40ns
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 21.46 mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 2.5mA
- Pin Count :
- 3
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Power Dissipation Ambient-Max :
- 180 W
- Product Status :
- Active
- Continuous Drain Current (ID) :
- 7A
- Transistor Type :
- 1 N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- RoHS :
- Details
- Mounting Style :
- Through Hole
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 3.5A, 10V
- Element Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 800V
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 180W (Tc)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 180W
- Drain to Source Voltage (Vdss) :
- 800V
- Polarity/Channel Type :
- N-Channel
- Published :
- 2000
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 1.4 Ω
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminals :
- 3
- Fall Time (Typ) :
- 60 ns
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 7A
- Configuration :
- Single
- Series :
- HiPerFET™
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 180 W
- Width :
- 5.3 mm
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Tradename :
- HyperFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 28A
- Voltage - Rated DC :
- 800V
- Maximum Operating Temperature :
- + 150 C
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Length :
- 16.26 mm
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Base Product Number :
- IXFH7
- Supplier Device Package :
- TO-247AD (IXFH)
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- DS Breakdown Voltage-Min :
- 800 V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 180W Tc
- Package :
- Tube
- Turn-Off Delay Time :
- 100 ns
- Channel Mode :
- Enhancement
- Packaging :
- Tube
- Datasheets
- IXFH7N80

N-Channel Tube 1.4 Ω @ 3.5A, 10V ±20V 2800pF @ 25V 130nC @ 10V 800V TO-247-3
IXFH7N80 Overview
A device's maximum input capacitance is 2800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Its maximum pulsed drain current is 28A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH7N80 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 28A.
a 800V drain to source voltage (Vdss)
IXFH7N80 Applications
There are a lot of IXYS
IXFH7N80 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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