IXFH7N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Published :

2012

Tradename :

HiPerFET

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

1000V

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2590pF @ 25V

Power Dissipation-Max (Abs) :

300 W

Vgs(th) (Max) @ Id :

6V @ 1mA

Operating Temperature :

-55°C~150°C TJ

FET Feature :

--

Polarity/Channel Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Package :

Tube

Factory Lead Time :

30 Weeks

Power Dissipation (Max) :

300W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

RoHS :

Details

Channel Mode :

Enhancement

Configuration :

Single

Product Type :

MOSFET

Product Status :

Active

Surface Mount :

No

Reach Compliance Code :

Compliant

Series :

HiPerFET™, Polar™

Brand :

IXYS

Base Product Number :

IXFH7

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

Drain Current-Max (Abs) (ID) :

7A

Supplier Device Package :

TO-247

Power Dissipation-Max :

300W Tc

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Product Category :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Package / Case :

TO-247-3

Vgs (Max) :

±30V

Packaging :

Tube

Mounting Type :

Through Hole

Rise Time :

49 ns